S D ARF1505 S ARF1505 BeO 1525-xx RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE S G S 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. • Specified 300 Volt, 27.12 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Efficiency > 75% • High Performance Power RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. • RoHS Compliant All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS ID Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C VGS Gate-Source Voltage PD Total Device Dissipation @ TC = 25°C TJ,TSTG TL ARF1505 UNIT 1200 Volts 25 Amps ±30 Volts 1500 Watts -55 to 175 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Voltage 1 MIN TYP MAX 8 9.5 1200 (I D(ON) = 12.5A, VGS = 10V) 100 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±400 Forward Transconductance (VDS = 25V, ID = 12.5A) Visolation RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 5.5 6 UNIT Volts μA nA mhos TBD Volts 3 5 Volts MAX UNIT Symbol Characteristic (per package unless otherwise noted) MIN TYP 0.10 RθJC Junction to Case RθJHS Junction to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.16 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com °C/W 050-4922 Rev F 10-2008 THERMAL CHARACTERISTICS DYNAMIC CHARACTERISTICS Symbol ARF1505 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 5400 6500 VDS = 200V f = 1 MHz 300 400 125 160 VGS = 15V 8 VDD = 0.5 VDSS 5 ID = ID[Cont.] @ 25°C 25 RG = 1.6Ω 13 Test Conditions Characteristic VGS = 0V Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η Ψ 1 Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 27.12 MHz 15 17 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 10:1 VDD = 300V Pout = 750W MAX UNIT No Degradation in Output Power Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 20,000 10,000 Ciss CAPACITANCE (pf) 5000 1000 Coss 500 Crss 100 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage 100 50 VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C 40 30 20 10 0 TJ = +25°C TJ = +125°C DATA FOR BOTH SIDES IN PARALLEL ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 050-4922 Rev F 10-2008 60 50 1ms 10 5 1 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics 100us OPERATION HERE LIMITED BY R (ON) DS 10ms TC =+25°C TJ =+200°C SINGLE PULSE 1 5 10 50 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Maximum Safe Operating Area 100ms 1.15 35 1.10 30 ARF1505 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) VGS = 10 & 9V 1.05 1.00 0.95 0.90 0.85 0.80 8V 25 7V 20 15 6V 10 5V 5 0 0.75 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 4, Typical Threshold Voltage vs Temperature 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics 0.10 D = 0.9 0.08 0.7 0.06 0.5 0.04 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.12 0.3 t1 t2 0.02 t 0.05 0 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 10 -5 SINGLE PULSE 10-3 10-2 10 -1 RECTANGULAR PULSE DURATION (SECONDS) Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration TYPICAL LARGE SIGNAL INPUT - OUPUT IMPEDANCE CHARACTERISTICS 10 1.0 -4 F (MHz) Zin (Ω) ZOL (Ω) 2.0 13.5 27 40 5.4 - j 9.6 0.30 - j 1.2 0.26 + j .58 0.36 + j 1.6 46 - j 10.5 16.4 - j 23 4.9 - j 14.6 2.3 - j 10.3 Zin - Gate shunted with 25Ω ZOL - Conjugate of optimum load for 750 Watts output IDQ = 100mA Vdd = 300V Clamp 1.065 .250 S D S .500 Heat Sink Thermal Considerations and Package Mounting: The rated 1500W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 175°C. The thermal resistance between junctions and case mounting surface is 0.10°C/W. When installed, an additional thermal impedance of 0.06°C/W between the package base and the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. 1525-xx 1.065 .045 S G S .207 .375 .207 .500 .005 .105 typ. HAZARDOUS MATERIAL WARNING D G S The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste. 050-4922 Rev F 10-2008 The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125 lb. required mounting force. T=4-6 in-lb. Please refer to App Note 1802 "Mounting Instructions for Flangeless Packages." ARF15-BeO A RF1505 -- 27.12 MHz Test Circ uit 300V L4 C7 L3 C9 C 8 C 10 Output C6 L2 L1 C1 C2 C 12 C5 R1 V bias C3 RF Input C4 T L1 C 11 R2 R3 135-05 050-4922 Rev F 10-2008 27 MHz Amp ARF1505 A RF 1500 27 MHz Amp ARF1505 ARF 1505 B eO J1 C1, C7, C8, C11 .047mF 500V cerami disc C2, C12 Arco 465 75-380pF mica trimmer C3 2x 4700pF ATC 700B C4, C9-C10 8200pF 500V NPO ceramic C5 200pF ATC 100E C6 150pF ATC 700B L1 90nH 4t # 18 0.25"d .25"I L2 200nH - 3t # 8 1" dia 1"I L3 6μH - 22t # 24 enam 0.5"dia L4 500nH 2t on 850μ .5" bead R1-R3 1KΩ 1/4W TL1 .112" x 1" (50Ω) Stripline 201 J2 R F 11-04 R F 11-04