ASAHI KASEI
[AK2570]
AK2570
Feed Forward APC LSI for LD Module
DESCRIPTION
AK2570 is the monolithic CMOS LSI has the function of ‘Feed Forward Automatic Power Control (APC)’ for the
Laser Diode (LD) module and maintains the emission intensity of the LD module constant with the high accuracy.
For stabilizing the emission intensity of the LD module affected by the ambient temperature, AK2570 feeds the
compensation voltage from the 2channels - 8bits D to A converter to control the Bias- and the Modulation- current
for the LD module. The compensation voltage corresponds to the temperature characteristic data of the LD module
retained in the on-chip EEPROM and the ambient temperature detected by the on-chip thermo-sensor.
AK2570 outputs the alarm signal for the weakened LD emission caused by the aging degradation with comparing
the alarm threshold level and the signal from the monitoring Photo Diode (PD).
The data of the compensation voltage and the alarm threshold level retained in the on-chip EEPROM can be set to
suit for the characteristics of each LD module.
FEATURE
• Realizing all APC function on 1 silicon chip
• Controlling the driving current (the Bias- and the Modulation- current) for the LD module
* Consisting of the 2channels - 8bits D to A converter and the Op-amp
• EEPROM (Electrically Erasable Programmable Read Only Memory)
* The Non-volatile Memory
* The memory capacity : Address 9bits × Data 16bits
* Retaining the data of the compensation voltage and the trimming data of the T-SENSE offset voltage and the ALM timing for
each LD module
• On-chip Thermo-sensor (T-SENSE)
* Detecting the ambient temperature and converting the detected temperature to the voltage
• On-chip Alarm circuit
* Outputting the alarm signal for the weakened LD emission caused by the aging degradation
• On-chip Oscillator
• On-chip Power on reset circuit
• Serial interface
• +3.3V±10% single voltage supply
• Low power consumption (30mA [max])
• Small package (20pin - SSOP : 7.9mm ×7.4mm)
<MS0115-E-00>
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2001/10
ASAHI KASEI
[AK2570]
BLOCK DIAGRAM
CS
SK
DI
DO
Register
Control
RDA1
DA1 (8bits)
AMP1
DAOUT1
FB1
SHUTDN
RDA2
DA2 (8bits)
DAOUT2
AMP2
EEPROM
Oscillator
FB2
RDA3
DA3 (8bits)
RVPD
AD1 (8bits)
RTMP
AD2 (8bits)
RINT
T-SENSE
VPDIN
Comparator
BIAS
VREF
ALMOUT
ALM
Power on Reset
RATRM
ALM Timing Generator
AVDD AVSS DVDD DVSS
<MS0115-E-00>
ENVIN
TEMPTEST ALMMOD1 ALMMOD0
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2001/10
ASAHI KASEI
[AK2570]
AK2570 consists of these circuit blocks as below.
Circuit block
Oscillator
VREF
Functional description
This circuit generates the standard clock that settles the timing for the sequence of the
internal circuit in “Self-operation mode (Ordinary mode)”.
This circuit generates the reference voltage for the A to D converter, the D to A converter
and the T-SENSE.
This circuit is the thermo-sensor, outputs the voltage corresponding to the ambient
T-SENSE
temperature, i.e. the temperature to voltage converter, and transfers this output voltage to
AD2. Also it integrates the offset adjustment circuit that cancels the distribution.
The A to D converter encodes the input voltage at VPDIN-pin (the signal from the
AD1
monitor PD) to the 8bits digital data. It is possible to read the encoded data of monitor PD
signal (the reference data for RDA3) held in RVPD register and to set the alarm threshold
level for the degraded LD in “Training mode”.
The A to D converter encodes the T-SENSE output signal to the 8bits digital data. In
“Self- operation mode”, the encoded data of the ambient temperature detected by the
AD2
T-SENSE is converted to the EEPROM address and utilized for reading the temperature
characteristic data of the LD retained in the EEPROM. In “Training mode”, it is possible
to read the encoded data of the detected temperature held in RTMP register.
This block consists of the D to A converter and the Op-amp and controls the Bias- or the
DA1,
Modulation- current for the LD. DA1 decodes the 8bits digital data held in RDA1 register
AMP1
to the compensation voltage for the temperature drift of the LD. Inputting the ‘H’ level
signal to SHUTDN-pin makes that DAOUT1-pin outputs ‘0V (min.)’.
This block consists of the D to A converter and the Op-amp and controls the Bias- or the
DA2,
Modulation- current for the LD. DA2 decodes the 8bits digital data held in RDA2 register
AMP2
to the compensation voltage for the temperature drift of the LD. Inputting the ‘H’ level
signal to SHUTDN-pin makes that DAOUT2-pin outputs ‘0V (min.)’.
DA3, ALMOUT,
This block outputs the ‘H’ level alarm signal from ALM-pin in the case that the
Comparator, ALM
monitoring PD signal becomes lower than the alarm threshold level retained in the
Timing Generator
EEPROM and held in RDA3 register, and this case is caused by the aging degradation.
This memory is the non-volatile memory, has the capacity ‘Address 9bits × Data 16bits’
and retains the data as below,
EEPROM
1. The temperature compensation data for the LD (transferred to RDA1 and RDA2 registers)
and the alarm threshold level data for the degraded LD (transferred to RDA3 register)
corresponding to the ambient temperature (the output from the T-SNESE and AD2).
2. The trimming data for the T-SENSE offset and the ALMOUT timing.
This circuit temporarily stores the ambient temperature data (in RTMP register), the
Register
temperature compensation data for the LD (in RDA1 and RDA2 registers), the alarm
threshold level data (in RDA3 register) and so on.
Control
Power on Reset
<MS0115-E-00>
This circuit controls the internal circuit, e.g. registers, with the serial interface.
At ‘Power ON’, this circuit initializes the data in all registers (see p.9) and sets AK2570 in
“Self-operation mode”.
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2001/10
ASAHI KASEI
[AK2570]
PIN ASSIGNMENT
[20] ALMMOD0
[2] BIAS
[19] ALMMOD1
[3] FB1
[4] DAOUT1
[5] FB2
[6] DAOUT2
[7] AVDD
[8] AVSS
AK2570
[1] TEMPTEST
[18] SHUTDN
[17] DVDD
[16] DVSS
[15] DO
[14] DI
[13] SK
[9] VPDIN
[12] CS
[10] ALM
[11] ENVIN
No
Name
I/O
Type
Function
AC load DC load Remark
1
TEMPTEST
O
Analog
Output the voltage generated by the T-SENSE (Factory use)
2
BIAS
O
Analog
Output the current reference determined by the external resistance
3
FB1
I
Analog
Input the feed back voltage to AMP1 for the gain control
4
DAOUT1
O
Analog
Output the compensation voltage [1] for the LD
5
FB2
I
Analog
Input the feed back voltage to AMP2 for the gain control
6
DAOUT2
O
Analog
Output the compensation voltage [2] for the LD
7
AVDD
I
Power
Supply the power for the analog part (+3.3V)
8
AVSS
I
Power
Ground the analog part (0V)
9
VPDIN
I
Analog
Input the signal of the monitor PD
10
ALM
O
CMOS
Output the aging alarm
11
ENVIN
I
CMOS
Input the envelope signal used at burst transmission
12
CS
I
CMOS
Input the Chip Select signal with the serial interface
13
SK
I
CMOS
Input the Shift clock with the serial interface
14
DI
I
CMOS
Input the Data with the serial interface
15
DO
O
CMOS
Output the Data with the serial interface
16
DVSS
I
Power
Ground the digital part (0V)
17
DVDD
I
Power
Supply the power for the digital part (+3.3V)
18
SHUTDN
I
CMOS
Input the shut down signal for DA1 and DA2
See P.15
19 ALMMOD1
I
CMOS
Input the select signal [1] for the aging alarm mode
See P.15
20 ALMMOD0
I
CMOS
Input the select signal [0] for the aging alarm mode
See P.15
[Note 1]
< 20pF
< 20pF
< 20pF
[Note 2]
< 100pF
[Note 1] : Kindly insert the external register 75kΩ (±1%) between BIAS-pin and AVSS.
[Note 2] : It is necessary to input the ‘L’ level signal to CS-pin at ‘Power ON’.
<MS0115-E-00>
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ASAHI KASEI
[AK2570]
FUNCTIONAL DESCRIPTION
1. Explanation for the ‘mode’
AK2570 has the 2 operational modes, “Self-operation mode” and “Training mode”.
After executing the evaluation and the adjustment for the LD module including AK2570 in “Training mode”, it
is possible to use AK2570 ordinarily in “Self-operation mode” for compensating the temperature drift of the LD
module.
“Self-operation mode” is the ordinary operational mode. If the ambient temperature drifts, AK2570 can
maintain the emission intensity of the LD module constant by executing the APC operation, i.e. controlling the
Bias- and the Modulation- current for the LD module, periodically (the compensation period is about 100msec)
in “Self-operation mode”. (See p.6) On the other hand, in “Training Mode”, it is possible to evaluate and adjust
AK2570 and the LD module by the access to the data in the EEPROM and the registers. (See p.7)
[a] Constitution of the mode and the command
Self-operation mode
[Note1]
[Note2]
Training mode
Initial setting
Activating internal circuit
Register access
EEPROM access
Command for Self-operation mode
Command for A/D operation
READ-REG
EWEN
Command for Training mode
Command for Resetting data in RDA1-3
WRITE-REG
EWDS
Command for Selecting AD1
WRITE-EEP
Command for Selecting AD2
READ-EEP
[Note 1] While operating in “Self-operation mode”, it is possible to shift to “Training mode” by executing
‘Command for Training mode’ and this is the only available command. That is to say that any other
command is not effective in “Self-operation mode”.
[Note 2] On the other hand, while operating in “Training mode”, it is possible to shift to “Self-operation mode”
by executing ‘Command for Self-operation mode’ or forcing the ‘L’ level signal to SK-pin for 50ms
more and AK2570 shifts to “Self-operation mode” with behaving as same as the operation at ‘Power
ON’.
<MS0115-E-00>
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ASAHI KASEI
[AK2570]
[b] Explanation for the modes and the commands
(1) Self-operation mode
The on-chip ‘Power on Reset’ circuit initializes the data in all registers and sets AK2570 in “Self-operation
mode” automatically at ‘Power ON’. In “Self-operation mode”, AK2570 operates as below and keeps the
emission intensity of the LD module constant by periodically applying the compensation voltage for the Biasand the Modulation- current against the temperature drift of the LD module.
In 50msec after the end of the resetting operation at ‘Power ON’, the data in EEPROM (Address =‘1 1111 1111
[EINT memory]’) is transferred to RINT and RATRM registers. Notice that the data in these registers can not
change except the case of executing ‘Power ON’ again or re-writing the data with executing ‘WRITE-REG’
command in “Training mode’.
In “Self-operation mode”, the T-SENSE converts the detected ambient temperature to the voltage. AD2
encodes this voltage to the 8bits digital data and transfers this data to RTMP register. This data is converted to
the EEPROM address and utilized for reading the temperature characteristic data of the LD retained in the
EEPROM. The EEPROM data is transferred to RDA1 ~ RDA3 registers and the output voltage of DA1 ~ DA3
are controlled. It is realized that the constant emission intensity of the LD is independent with the temperature
drift by controlling the Bias- and the Modulation- current for the LD module and the alarm signal for the
weakened LD. This behavior is executed periodically (the period is about 100ms). While operating in
“Self-operation mode”, it is impossible to execute any command except ‘Command for Training mode’.
Power ON
The 'Power on Reset' circuit operates and initializes the data in all registers.
The data for RINT & RATRM registers retained in EEPROM (Address="1 1111 1111") is transferred to REG0 register.
The period is
about 100ms
The data is transferred from REG0 register to RINT & RATRM registers.
AD2 executes A to D conversion for the output voltage from the T-SENSE.
0.6ms
（ typ）
50ms
（ typ）
The output data "XXXX XXXX" generated by AD2 is transferred to RTMP register.
The access to EEPROM is executed with referring the data held in RTMP register.
The data for RDA1~2 registers retained in EEPROM (address = "x xxxx xxx0")
is transferred to D31~D16 in REG0 register.
The data for RDA3 register retained in EEPROM (address = "x xxxx xxx1") is
transferred to D15~D8 in REG0 register.
The data in REG0 register is transferred to RDA1 ~ RDA3 registers.
It is waiting for the next compensatory operation.
Note) REG0 register : This register synsthesizes the 32bits data and temporarily holds the data
when transferring the data from the EEPROM to the registers.
<MS0115-E-00>
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ASAHI KASEI
[AK2570]
(2) Training mode
“Training mode” is used for the evaluation and the adjustment about AK2570. It is possible to write and read
the data in the EERPOM and the registers and to execute activating the internal circuit for setting the
temperature compensation data with the serial interface. Notice that it is possible to shift to “Training mode”
by executing ‘Command for Training mode’ and any other command is not available while operating in
“Self-operation mode”.
After executing ‘Command for Training mode’, it is necessary to input the clock or the ‘H’ level signal to
SK-pin continuously to keep the operational mode is in “Training mode“. It is able to return to “Selfoperational mode” by forcing the ‘L’ level signal to SK-pin for 50msec more in “Training mode”.
In “Training mode”, the periodical operation of temperature compensation for the LD is stopped. Also at the
time of executing ‘Command for Training mode’ while operating in “Self-operational mode”, AK2570
transfers to “Training mode” after completing the periodical operation.
Recommended sequence in ”Training mode
START
Set the temperature at the minimum value for the use (e.g. -40℃ )
Execute 'Command for Training mode'
--> Initial setting : Command for Training mode
Write '00000' in RINT register --> Register access : WRITE-REG(RINT)
AD2 executes A to D conversion --> Initial Setting : Command for Selecting AD2
--> Activating Internal Circuit :
for the T-SENSE output
Add '+1' to the data
in RINT register
Command for A/D operation
--> Register access
WRITE-REG(RINT)
Nｏ
Confirm the code generated by AD2
is '00000010'~'00001000' (e.g. -40℃ )
Yｅｓ
--> Register Access : READ-REG(RTMP)
(See p.15)
Set the data for DA1 & DA2 that will be retained in
EDA1 &EDA2 to fit the LD characteristics
Change the
ambient temperature
--> Register access :
READ-REG(RTMP)
Nｏ
--> Register Access : WRITE-REG(RDA1)
--> Register Access : WRITE-REG(RDA2)
--> Evaluation for the LD characteristics
--> Adjusting the monitoring PD
--> Initial Setting : Command for Selecting AD1
--> Activating Internal Circuit :
Command for A/D operation
--> Register Access : READ-REG(RVPD)
After execting the A to D conversion in AD1 for
the input voltage to VPDIN-pin, read the data in
RVPD register that will be retained in EDA3
Complete the measurement for the compensation data
Yｅｓ
Make the data for writing in the EEPROM
Write the compensatory data in the EEPROM
--> EEPROM Access : EWEN
--> EEPROM Access : WRITE-EEP
FINISH
<MS0115-E-00>
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2001/10
ASAHI KASEI
[AK2570]
I) Initial Setting
[1] Command for Self-operation mode
By executing ‘Command for Self-operation mode’, it is possible to transfer the mode from “Training mode” to
“Self-operation mode”.
[2] Command for Training mode
By executing ‘Command for Training mode’, it is possible to transfer the mode from “Self-operation mode” to
“Training mode”. Also any command except ‘Command for Training mode’ is not available while AK2570
operates in “Self-operation mode”.
[3] Command for Selecting AD1
‘Command for selecting AD1’ is available in “Training mode”. This command sets that AD1 (the A to D
converter for the input voltage to VPDIN-pin) is enable for the operation and the selector between AD1 and
RVPD register is available. After this command is performed, the 8bits digital data of the VPDIN-pin signal
encoded in AD1 is stored in RVPD register by executing ‘Activating internal circuit - Command for A/D
operation’.
[4] Command for Selecting AD2
‘Command for selecting AD2’ is available in “Training mode”. This command sets that AD2 (the A to D
converter for the output voltage from T-SENSE) is enable for the operation and the selector between AD2 and
RTMP register is available. After this command is performed, the 8bits digital data of the T-SENSE output
encoded in AD2 is stored in RTMP register by executing ‘Activating internal circuit - Command for A/D
operation’.
II) Activating internal circuit
[1] Command for A/D operation
‘Command for A/D operation’ makes that the selected A to D converter (AD1 or AD2) operates and the
selected register (RVPD register or RTMP register) stores the data generated in the A to D converter selected by
executing ‘Command for Selecting AD1’ or ‘Command for Selecting AD2’. Also this command makes only
that the selected register stores the 8bits digital data generated by the selected A to D converter.
[2] Command for Resetting data in RDA1-3
‘Command for Resetting data in RDA1-3’ sets that RDA1 ~ RDA3 registers hold the data retained in
EEPROM which address is nominated by the data in RTMP register. Also this command is always available in
“Training mode” and independent with the selector set by ‘Command for Selecting AD1’ or ‘Command for
Selecting AD2’.
III) Register Access
[1] Command for reading the data in the register (READ-REG）
It is able to read the data held in the nominated register by executing ‘READ-REG’ command.
[2] Command for Writing the data in the register (WRITE-REG)
It is able to write the data in the nominated register by executing ‘WRITE-REG’ command.
<MS0115-E-00>
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ASAHI KASEI
[AK2570]
Register map
Data
Name
Address
Function
RTMP
000
X
~ X D7 D6 D5 D4 D3 D2 D1 D0 Holding the data (temperature) generated by AD2
RDA1
001
X
~ X D7 D6 D5 D4 D3 D2 D1 D0
Holding the data for DA1
RDA2
010
X
~ X D7 D6 D5 D4 D3 D2 D1 D0
Holding the data for DA2
RDA3
011
X
~ X D7 D6 D5 D4 D3 D2 D1 D0
Holding the data for DA3
RINT
100
X
~ X X X X D4 D3 D2 D1 D0
Holding the trimming data for T-SENSE [*1]
RVPD
101
X
~ X D7 D6 D5 D4 D3 D2 D1 D0
Holding the data (VPDIN) generated by AD1
RATRM
110
X
~ X X X X D4 D3 D2 D1 D0
Holding the trimming data for ALMOUT [*2]
D23 ~ D8 D7 D6 D5 D4 D3 D2 D1 D0
[*1］ RINT register stores the initial data for the offset voltage of the T-SENSE
[*2] ATRM register stores the adjustment data for the alarm timing at the 50Mbps and the 156Mbps burst transmission (AKM recommends to use the EEPROM data for RATRM register already written at the shipment.）
Initial register data
Name
Address
D23
~
D8
D7
D6
D5
D4
D3
D2
D1
D0
RTMP
000
X
~
X
1
1
1
1
1
1
1
1
RDA1
001
X
~
X
0
0
0
0
0
0
0
0
RDA2
010
X
~
X
0
0
0
0
0
0
0
0
RDA3
011
X
~
X
0
0
0
0
0
0
0
0
RINT
100
X
~
X
X
X
X
0
0
0
0
0
RVPD
101
X
~
X
0
0
0
0
0
0
0
0
RATRM
110
X
~
X
X
X
X
1
0
0
0
0
<Note> ‘X’ is indefinite, ‘1’ or ‘0’.
IV) EEPROM Access
[1] Command for enabling to write the data in the EEPROM (EWEN)
‘EWEN’ command makes it possible to write the data in the EEPROM. It is necessary to execute this
command before writing the data in the EEPROM, because it is automatically set at ‘Power ON’ to prohibit
writing the data in the EEPROM. In “Training mode”, it is always possible to write the data in the EEPROM
after executing this command except the case of ‘Power OFF’ or executing ‘EWDS’ command.
[2] Command for prohibiting to write the data in the EEPROM (EWDS)
‘EWDS’ command makes it impossible to write the data in the EEPROM and it is the same setting at
‘Power ON’. This command is available to change the setting to prohibit writing the data in the EEPROM
without ‘Power OFF’.
[3] Command for writing the data in the EEPROM (WRITE-EEP)
It is able to write the data in the nominated EEPROM by executing ‘WRITE-EEP’ command. And it is
necessary to execute ‘EWEN’ command at first for permitting to write the data in the EEPROM.
[4] Command for reading the data in the EEPROM (READ-EEP)
It is able to read the data held in the nominated EEPROM by executing ‘READ-EEP’ command.
<MS0115-E-00>
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ASAHI KASEI
[AK2570]
EEPROM map
Address
Name
Data
D15 D14 D13 D12 D11 D10 D9 D8 D7
A8 - A0
D6
D5 D4 D3 D2 D1 D0
EDA12
0 0000 0000
The data for RDA1 (8bit)
The data for RDA2 (8bit)
EDA3
0 0000 0001
The data for RDA3 (8bit)
The unused bits (8bit)
EDA12
0 0000 0010
The data for RDA1 (8bit)
The data for RDA2 (8bit)
EDA3
0 0000 0011
The data for RDA3 (8bit)
The unused bits (8bit)
|
|
|
|
EDA12
1 1111 1100
The data for RDA1 (8bit)
The data for RDA2 (8bit)
EDA3
1 1111 1101
The data for RDA3 (8bit)
The unused bits (8bit)
ERES
1 1111 1110
EINT
1 1111 1111
The reserved bits (16bit)
The unused bits
The data for RATRM The unused bits The data for RINT
(3bit)
D12 - D8(5bit)
(3bit)
D4 - D0 (5bit)
<Note> AKM cannot assure the period of the data retention (10years [min.] at 85°C) for ‘The unused bits’.
<Note> Kindly pay attention when writing the data for RINT, because EINT also retains the data for RATRM
register written at AKM.
2 Serial Interface
In “Training mode”, it is able to execute the access to the EEPROM and the registers and to input the operational
command for AK2570 with the 32bits serial data via 4pins consist of CS(#12), SK(#13), DI(#14) and DO(#15).
1) Constitution of the serial interface data
[a] “Initial setting”, “Activating Internal Circuit” and “Register Access” (total 32bits)
Classification
Selection
Address
Data
4bits
1bit
3bits
24bits
[b] “EEPROM Access” (Total 32bits)
Classification
Command
Address
Data
4bits
2bits
10bits
16bits
<Note> These bits contain the arbitrary bit (the data is not definite, ‘0’ or ‘1’)’.
Please refer to the table in the next page.
<MS0115-E-00>
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2001/10
ASAHI KASEI
[AK2570]
ii) Access to the serial interface
Classification
1
1
0
Select
0
[1]Initial Setting
1
1
1
1
[2]Activating Internal Circuit
1
1
1
0
[3]Register Access
1
1
0
[4]EEPROM Access
Classification
1
Address
Data
Execution
1
0
0
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
Command for Ordinary mode
1
0
0
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
Command for Training mode
1
0
1
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
Command for Selecting AD2
1
0
1
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
Command for Selecting AD1
1
0
0
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
Command for A/D operation
1
0
0
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
Command for Resetting data in RDA1-3
0
0
0
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x D7 D6 D5 D4 D3 D2 D1 D0
READ-REG (RTMP)
0
0
0
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x D7 D6 D5 D4 D3 D2 D1 D0
READ-REG (RDA1)
0
0
1
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x D7 D6 D5 D4 D3 D2 D1 D0
READ-REG (RDA2)
0
0
1
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x D7 D6 D5 D4 D3 D2 D1 D0
READ-REG (RDA3)
0
1
0
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
READ-REG (RINT)
0
1
0
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x D7 D6 D5 D4 D3 D2 D1 D0
0
1
1
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x D4 D3 D2 D1 D0
READ-REG (RATRM)
1
0
0
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x D7 D6 D5 D4 D3 D2 D1 D0
WRITE-REG (RTMP)
1
0
0
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x D7 D6 D5 D4 D3 D2 D1 D0
WRITE-REG (RDA1)
1
0
1
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x D7 D6 D5 D4 D3 D2 D1 D0
WRITE-REG (RDA2)
1
0
1
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x D7 D6 D5 D4 D3 D2 D1 D0
WRITE-REG (RDA3)
1
1
0
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
WRITE-REG (RINT)
1
1
0
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x D7 D6 D5 D4 D3 D2 D1 D0
1
1
1
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x D4 D3 D2 D1 D0
0
0
0
0
0
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
0
0
1
1
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
0
1
x A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
WRITE-EEP
1
0
x A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
READ-EEP
Command
Address
Data
x
x
x
x
x
x
x D4 D3 D2 D1 D0
x D4 D3 D2 D1 D0
READ-REG (RVPD)
WRITE-REG (RVPD)
WRITE-REG (RATRM)
EWDS
EWEN
Execution
Note) ‘x’ in this table is not definite, ‘0’ or ‘1’.
<MS0115-E-00>
11
2001/10
ASAHI KASEI
[AK2570]
III) Timing for the serial interface
[1] Initial Setting
CS
SK
DI
0
1
2
3
4
5
6
7
8
9
10
30
31
1
1
0
0
1
A2
A1
A0
X
X
X
X
X
A2
0
0
0
0
A1
0
0
1
1
A0
0
1
0
1
---------
Command for Self-operation mode
Command for Training mode
Command for Selecting AD2
Command for Selecting AD1
[2] Activating Internal Circuit
[a] Command for A/D operation
CS
SK
DI
0
1
2
3
4
5
6
7
8
9
10
30
31
1
1
1
1
1
0
0
0
X
X
X
X
X
[b] Command for Resetting data in RDA1-3
CS
SK
DI
0
1
2
3
4
5
6
7
8
60
61
62
63
1
1
1
1
1
0
0
1
X
X
X
X
X
<Note> In the case of executing ‘Command for Resetting data in RDA1-3’, it is necessary to input the 64
clocks to SK-pin with keeping to force the ‘H’ level signal to CS-pin.
[3] Register Access
[a] Command for reading the data in register(READ-REG)
CS
SK
DI
DO
<MS0115-E-00>
0
1
2
3
4
1
1
1
0
0 A2 A1 A0
Hi-Z
5
6
7
8
9 10
20 21 22 23 24 25 26 27 28 29 30 31
Don't care ('0' or '1')
12
D7 D6 D5 D4 D3 D2 D1 D0 Hi-Z
2001/10
ASAHI KASEI
[AK2570]
[b] Command for writing the data in the register (WRITE-REG)
CS
SK
DI
0
1
2
3
4
5
6
1
1
1
0
1 A2 A1 A0 X X X
A2
0
0
0
0
1
1
1
7
A1
0
0
1
1
0
0
1
8
A0
0
1
0
1
0
1
0
9 10
20 21 22 23 24 25 26 27 28 29 30
X X X X D7 D6 D5 D4 D3 D2 D1 D0
Register
RTMP
RDA1
RDA2
RDA3
RINT
RVPD
RATRM
---------------
31
=
=
=
=
=
=
=
Data
8bits
8bits
8bits
8bits
5bits
8bits
5bits
[4] EEPROM Access
[a] Command for enabling/prohibiting to write the data in the EEPROM (EWEN/EWDS)
CS
SK
DI
0
1
2
3
4
5
6
7
8
9 10
20 21 22 23 24 25 26 27 28 29 30 31
1
1
0
1
0
0 A9 A8 A7 X X
X X X X X X X X X X X X
A9 A8 A7
0 0 0 --- EWDS command
1 1 1 --- EWEN command
[b] Command for writing the data in the EEPROM (WRITE-EEP)
CS
SK
DI
0
1
2
3
4
5
6
7
8
9 10
14 15 16 17 18
28 29 30 31
1
1
0
1
0
1
X A8 A7 A6 A5
A1 A0 D15 D14 D13
D3 D2 D1 D0
DO
Hi-Z
tE/W
[c] Command for reading the data in the EEPROM (READ-EEP)
CS
SK
DI
DO
<MS0115-E-00>
0
1
2
3
4
5
6
7
8
9 10
1
1
0
1
1
0
X A8 A7 A6 A5
Hｉ-Z
14 15 16 17 18
A1 A0
D15 D14 D13
13
28 29 30 31
D3 D2 D1 D0 Hi-Z
2001/10
ASAHI KASEI
[AK2570]
3. Thermo-sensor (T-SENSE)
Kindly see the figure below that shows the relationship between the detected ambient temperature (T) and the
generated output voltage (VT) in the T-SENSE.
Encoded data in AD2
0000 0000
0000 0001
0000 0010
0000 0011
Output voltage
VT [V]
2.2
Offset voltage
0111 1111
1000 0000
1000 0001
1111 1100
1111 1101
1111 1110
1111 1111 -->1111 1110［ Note］
0.0
-40
+85
Ambient temperature
T[C]
[Note] In ‘Self-operation mode’, it is the unique case that the data “1111 1111” generated by AD2 is converted to
“1111 11110” automatically and the EEPROM data in the address ‘1 1111 110X’ is used as the
compensation data, this is the reason why that the EEPROM which address is “1 1111 111X” retains the
reserved data and the trimming data for the T-SENSE and the ALMOUT.
VT is 2.2V (Typ.) at -40°C and 0.0V at 85°C above and has the distribution due to each LSI. However it is
possible to cancel the distributed offset voltage arising in the T-SENSE among LSIs by setting the data (D4 ~D0)
in RINT register. The offset cancel voltage (Reference) corresponding to the data (D4 ~D0) in RINT register is
shown in the table below.
RINT register
<MS0115-E-00>
D4 D3 D2 D1 D0
Offset cancel voltage [mV]
(Reference）
1 1 1 1 1
1 1 1 1 0
1 1 1 0 1
1 1 1 0 0
|
1 0 0 0 1
1 0 0 0 0
0 1 1 1 1
|
0 0 0 1 1
0 0 0 1 0
0 0 0 0 1
0 0 0 0 0
+375
+350
+325
+300
|
+25
0
-25
|
-325
-350
-375
-400
14
2001/10
ASAHI KASEI
[AK2570]
*Set up for the RINT register
The offset voltage arising in the T-SENSE is slightly different and has the distribution among the LSIs.
Please adjust that the data in RTMP register exists between the ‘Minimum code’ and the ‘Maximum code’
shown in this table at the ‘Minimum ambient temperature for the use’ with writing the data in RINT register in
“Training mode”, and refer to ‘Recommended sequence in ”Training mode” in p.7.
Minimum ambient temperature for the use
Minimum code
Maximum code
0°C
01000010
01001000
-20°C
00100010
00101000
-30°C
00010010
00011000
-40°C
00000010
00001000
In the case of fitting at +25°C(Reference)
01100110
01101100
<Reference>
1LSB of AD2 output data (8bits) is 8.63mV (Typ.）. Therefore 6codes is 51.8mV (Typ.) corresponding to
the range between ‘Minimum code’ and ‘Maximum code’ shown in above table. On the other hand, the step
of the offset cancel voltage is 25mV (Typ.) and it is possible to adjust the output voltage of the T-SNESE in
the range of ‘Minimum code’ and ‘Maximum code’.
After this offset voltage adjustment, the output voltage from the T-SENSE becomes appropriate for the
AD2 input range at every ambient temperature (-40°C ~ +85°C). Also the ‘Minimum code’ and the
‘Maximum code’ for this adjustment increase 16 codes/10°C.
4. D to A converter (DA1 and DA2)
In the normal operation, forcing the ‘L’ level signal to SHUTDN-pin makes that DAOUT1 (the output of DA1
+AMP1) and DAOUT2 (the output of DA2+AMP2) utput the voltage corresponding to the data in RDA1 and
RDA2 registers.
On the other hand, forcing the ‘H’ level signal to SHUTDN-pin makes that DAOUT1 and DAOUT2 output
0V (Min.). Also the data in RDA1 and RDA2 registers does not change and is held while forcing ‘Shut down
signal (the ‘H’ level)’. By forcing the ‘L’ level signal to SHUTDN-pin again, DAOUT1 and DAOUT2 output
the signal corresponding the continuously held data in RDA1 and RDA2 registers.
5. Alarm circuit (DA3, ALMOUT, Comparator and ALM Timing Generator)
I) Mode setting
The alarm circuit has the 3 modes (the Continuous mode, the 156Mbps burst transmission mode and the
50Mbps burst transmission mode). Each mode is set by the signals forced to ALMMOD0-pin and
ALMMOD1-pin.
ALMMOD1
0
0
1
1
<MS0115-E-00>
ALMMOD0
0
1
0
1
15
Mode
the Continuous mode
the 50Mbps burst transmission mode
the 156Mbps burst transmission mode
Prohibited
2001/10
ASAHI KASEI
[AK2570]
II) Continuous mode
The alarm circuit compares the input voltage to VPDIN-pin (the monitoring PD signal) and the output voltage
from DA3 (the alarm threshold level). The data for the alarm threshold level is retained in the EEPROM
(EDA3), transferred to RDA3 and converted D to A signal in DA3. At any time, the ‘H’ level alarm signal can
be generated and outputted from ALM-pin in the case that the input voltage to VPDIN-pin becomes lower than
the output voltage of DA3.
III) 50Mbps burst transmission mode and 156Mbps burst transmission mode
The alarm circuit compares the input voltage to VPDIN-pin (the monitoring PD signal) and the output voltage
from DA3 (the alarm threshold level). The data for the alarm threshold level is retained in the EEPROM
(EDA3), transferred to RDA3 and converted D to A signal in DA3.
The alarm circuit detects the polarity of the input signal to ENVIN-pin at the constant timing (the detecting
point) from the rising edge (‘L’à’H’) of this signal. The alarm circuit outputs the alarm signal (the ‘H’ level)
from ALM-pin in the case that the input voltage to VPDIN-pin is lower than the output voltage from DA3 and
ENVIN signal is still kept at the ‘H’ level. Also the alarm circuit detects the rising edge of the ENVIN signal
and fixes the constant timing to output the alarm signal.
In the case that VPDIN signal recovers and becomes higher than the alarm threshold level at the detecting
point with ENVIN = ‘H’ or that the ENVIN signal becomes the ‘L’ level, the alarm circuit outputs the ‘L’ level
(the normal signal) from ALM-pin.
* In the case of outputting the alarm signal continuously
ENVIN
ALM
The fixed timing of
outputting the alarm signal
* In the case of stopping the alarm signal (the VPDIN signal recovers)
ENVIN
ALM
The fixed timing of outputting the alarm signal
<MS0115-E-00>
16
The VPDIN signal recovers
2001/10
ASAHI KASEI
[AK2570]
ABSOLUTE MAXIMUM RATING
Parameter
Symbol
Min.
Max.
Unit
Remark
Power supply voltage
VDD
-0.3
6.0
V
DVDD-pin, AVDD-pin
Ground level
VSS
0.0
0.0
V
DVSS-pin, AVSS-pin
Digital input voltage
VDIN
-0.3
VDD+0.3
V
Analog input voltage
VAIN
-0.3
VDD+0.3
V
Input current
IIN
-10
10
mA
Storage temperature
TSTG
-55
+125
°C
Except the pins above
<Note> AK2570 may operate abnormally and be broken under the condition exceeding the range shown above.
RECOMMENDED OPERATING CONDITION
AKM can assure the characteristics of AK2570 specified in this data sheet under the condition as below.
Parameter
Power supply voltage
Ambient temperature for operation
<MS0115-E-00>
Symbol
Min.
Typ.
Max.
Unit
VDD
2.97
3.30
3.63
V
VSS
0.0
0.0
0.0
V
Ta
-40
85
°C
17
Remark
2001/10
ASAHI KASEI
[AK2570]
ELECTRICAL CHARACTERISTICS
(1) Power Consumption
Parameter
Symbol
Consumptive current
IDD
Min.
Typ.
Max.
Unit
30
mA
Remark
<Note> The consumptive current which does not include the driving current for the outputs is measured under the
condition that the digital input pins are connected to VSS or VDD.
(2) EEPROM characteristics
Parameter
Min.
Typ.
Max.
Unit
Remark
EEPROM total writing times
10000
time
EEPROM data retention 1
10
year
85°C
EEPROM data retention 2
300
year
50°C (Reference)
(3) Digital Part
[a] DC characteristics
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Input higher voltage
VIH
0.7VDD
VDD
V
Input lower voltage
VIL
VSS
0.3VDD
V
Input higher current
IIH
VIH = VDD
10
µA
Input lower current
IIL
VIL = 0V
-10
µA
Output higher voltage
VOH
IOH = -0.2mA
0.9VDD
V
Output lower voltage
VOL
IOL = 0.2mA
0.1VDD
V
Typ.
Unit
[b] AC characteristics
Parameter
SK : Period
Symbol
Condition
Min.
Max.
tSKP
While A/D conversion
10
µs
tSKP
While other operation
2
µs
SK : Pulse duty
tSKW
40
Delay time : CS=‘H’ to SK=‘H’[*]
tCSS
150
ns
Delay time : SK=‘L’ to CS=‘L’
tCSH
0
ns
Time for setting up the data
tDIS
200
ns
Time for holding the data
tDIH
200
ns
Delay time for the output
tPD
Time to write in the EEPROM
tE/W
10
ms
CS : Minimum time in the ‘L’ level
tCS
250
ns
Delay time : CS=‘L’ to DO=‘Hi-Z’
tOZ
CL = 100pF
60
1
100
%
µs
ns
[*] It is necessary to force the ‘L’ level to SK-pin at the rising edge of the CS signal and to apply the clock to SK-pin
at 150msec or more after this rising edge of the CS signal.
<MS0115-E-00>
18
2001/10
ASAHI KASEI
[AK2570]
Digital Part –AC characteristics : Timing
[1] Timing for the command input
CS
tCSS
tSKW
tSKW
tSKP
SK
DI
tDIS
tDIH
High-Z
DO
[2] Timing for the data output
CS
tCSH
SK
DI
tPD
DO
tPD
D3
tPD
D2
D1
tOZ
D0
High-Z
[3] Timing for writing the data in the EEPROM
tCS
CS
tCSH
SK
tDIS
DI
DO
<MS0115-E-00>
tDIH
D1
D0
tE/W
High-Z
19
2001/10
ASAHI KASEI
[AK2570]
(4) Analog part
[a] Input characteristics of the A to D converter
<1> AD1
Resolution
8bits linear
Conversion time
About 150µs or 15 SK clocks
DNL
±2LSB
Input range 1 (Peak voltage)
0.0V ~ 1.0V [Typ]
MSB
D7
LSB
D6 D5 D4 D3 D2 D1
Input voltage
D0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
à 1.0V
(Straight binary)
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
à 0.0V
<2> AD2
Resolution
8bits linear
Conversion time
About 150µs or 15 SK clocks
DNL
±0.7LSB
Input range 2 (Temperature)
0.0V ~ 2.2V [Typ.]
MSB
D7
D6 D5 D4 D3 D2 D1
LSB
Input voltage
D0
(Detected temperature)
à 2.2V (-40°C)
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
(Straight binary)
1
1
1
1
1
1
0
1
1
1
1
1
1
1
1
0
à 0.0V (> 85°C)
[b] Output characteristics of the A to D converter
<1> DA1, DA2
Parameter
Min.
Resolution
Typ.
Max.
8
DNL
-1/2
Maximum output voltage
0.425
Minimum output voltage
Unit
Remark
bit
Circuit design
+1/2
LSB
0.575
V
0.0
10.0
mV
Output voltage at the shut down operation
0.000
5.000
mV SHUTDN-pin is forced ‘H’
Output current
2.50
0.500
mA
±15% <Note>
Input code =181 (dec)
<Note> ±5% included in the range ±15% is the distribution caused by the fluctuations of the power source voltage
and the ambient temperature.
<MS0115-E-00>
20
2001/10
ASAHI KASEI
[AK2570]
<2> The over shoot voltage of DA1 and DA2 at relieving the shut down operation
Input data for DA1 and DA2
Min.
Typ.
Max.
Unit
‘Output voltage’×1.2
mV
Remark
11111111
11111110
|
00001001
Designed guarantee
value
00001000
00000111
00000110
13.0
|
mV
(Stabilized in 120µs)
00000001
Designed guarantee
value
00000000
<3> DA3
Min.
Typ.
Max.
Unit
Remark
Resolution
8
bit
Circuit design
Voltage step by 1 code
3.92
mV
Designed guarantee value
Maximum output voltage
1.00
V
Designed guarantee value
Minimum output voltage
0.00
mV
Designed guarantee value
<4> Relationship between the input digital code and the output voltage
D to A converter
Digital code
Output voltage (Typ.)
11111111
500mV
DA1
DA2
DA3
<MS0115-E-00>
|
|
00000001
00000000
11111111
1.96mV
0.0V
500mV
|
|
00000001
00000000
11111111
1.96mV
0.0V
1.0V
|
|
00000001
00000000
3.92mV
0.0V
21
2001/10
ASAHI KASEI
[AK2570]
[c] Output characteristics of the alarm signal
<1> Continuous mode
Parameter
Symbol
Delay time of ALM signal
tDLY
Condition
Min.
Typ.
DA3 output=0.5V
VPDIN=2.0Và0V
VPDIN
Max.
units
100
ns
DA3 output
tDLY
ALM
<2> 50Mbps burst transmission mode
Parameter
Symbol
Condition
Min.
Typ.
Max.
Start time for detecting ENV signal
tENVDT1
Total time for detecting ENV signal
tENVDT2
617.3
ns
Time for detecting ENV signal
tENVDT
154.3
ns
Time for confirming VPDIN signal
tVIN
Time for outputting ALM signal
tALMO
463.0
ns
212.2
CL=20pF
unit
463.0
ns
771.6
ns
[*] The condition of measuring for the ‘Time for outputting ALM signal’ is that the input voltage to
VPDIN-pin is 0.0V (constant).
CLK
(51.84MHz)
tENVDT2
tENVDT1
tENVDT
ENVIN
tVIN
VPDIN
tALMO
ALM
<Note> The clock (51.84MHz) is not applied to AK2570.
<3> 156Mbps burst transmission mode
Parameter
Symbol
Condition
Start time for detecting ENV signal
tENVDT1
Total time for detecting ENV signal
tENVDT2
218.8
ns
Time for detecting ENV signal
tENVDT
51.4
ns
Time for confirming VPDIN signal
tVIN
Time for outputting ALM signal
tALMO
Min.
Typ.
Max.
167.2
ns
64.3
CL=20pF
167.2
unit
ns
372.9
ns
[*]The condition of measuring for the ‘Time for outputting ALM signal’ is that the input voltage to
<MS0115-E-00>
22
2001/10
ASAHI KASEI
[AK2570]
VPDIN-pin is 0.0V (constant).
CLK
(155.52MHz)
tENVDT2
tENVDT1
tENVDT
ENVIN
tVIN
VPDIN
tALMO
ALM
<Note> The clock (155.52MHz) is not applied to AK2570.
Delay time between the falling edge of ENVIN and that of ALM
In the 50Mbps burst transmission mode and the 156Mbps burst transmission mode, the ALM signal
becomes the ‘L’ level in the case of that the ALM signal is still generated (at the ‘H’ level) and the ‘L’ level
signal is forced to ENVIN-pin (ENV signal). There is the delay time between the falling edge of the ENV
signal and that of the ALM signal in this case.
Parameter
Delay time between the falling
edge of ENVIN and that of ALM
Symbol
Condition
tALMDL
CL=20pF
Min.
Typ.
Max.
unit
19.3
ns
ENVIN
ALM
tALMDL
Error on the judgment for ALM signal
There is some error on the judgment for generating the alarm signal. Therefore ALM signal will be often
generated in the case that the input voltage to VPDIN-pin is slightly bigger than the DA3 output (the alarm
threshold level). The error shown below is the value against the DA3 output.
DA3 output (Typ.)
Error on the judgment for ALM signal [*]
Remarks
58.8mV
±3dB
Designed reference value
98.0mV
±2dB
Designed reference value
[*] dB = the converted value for the power
<MS0115-E-00>
23
2001/10
ASAHI KASEI
[AK2570]
RECOMMENDED EXTERNAL CIRCUIT
[1] BIAS-pin for the reference voltage
Kindly connect the resistance (the ±1% accuracy) between BIAS-pin and AVSS with the line pattern as short
as possible.
AK2570
R=75kΩ ± 1％
BIAS(#2)
AVSS
[2] Power pins
Kindly insert the capacitor as shown below between DVDD-DVSS and AVDD-AVSS.
AK2570
AVDD(#7)
[DVDD(#17)]
C=0.1μ F
AVSS(#8)
[DVSS(#16)]
<MS0115-E-00>
24
2001/10
ASAHI KASEI
[AK2570]
EXAMPLE for EXTERNAL CIRCUIT
[a] The examples of the external circuit for DAOUT1-pin / FB1-pin and DAOUT2-pin / FB2-pin are shown below
in the case of the use at the direct variation for the LD.
<1> Example [1]
AK2570
LD
DAOUT1(#4)
FB1(#3)
Driver Circuit
DAOUT2(#6)
FB2(#5)
<2> Example [2]
AK2570
LD
DAOUT1(#4)
Voltage for the Bias current
FB1(#3)
DAOUT2(#6)
Driver LSI
Voltage for the Modulation current
FB2(#5)
[b] The example of the external circuit for VPDIN-pin is shown below.
AK2570
PD
VPDIN(#9)
<MS0115-E-00>
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ASAHI KASEI
[AK2570]
PACKAGE
Package type : 20pin - SSOP
Marking on the surface of the package :
(1) Index : Indicating Pin #1
(2) Company name : AKM
(3) Product No. : AK2570
(4) Date code : XXXXXXX (7 figures)
7.4MAX
7.2TYP
20
11
7.90± 0.20
AKM
5.3TYP
0.6± 0.2
0.22± 0.05
Package size :
AK2570
xxxxxxx
10
0.13
0.65
2.10MAX
1
M
0° ~ 10°
0.10± 0.10
0.32± 0.10
0.10
<MS0115-E-00>
26
2001/10
ASAHI KASEI
[AK2570]
IMPORTANT NOTICE
• These products and their specifications are subject to change without notice.
Before considering any use or application, consult the Asahi Kasei Microsystems Co., Ltd. (AKM)
sales office or authorized distributor concerning their current status.
• AKM assumes no liability for infringement of any patent, intellectual property, or other right in the
application or use of any i nformation contained herein.
• Any export of these products, or devices or systems containing them, may require an export license
or other official approval under the law and regulations of the country of export pertaining to
customs and tariffs, currency exchange, or strategic materials.
• AKM products are neither intended nor authorized for use as critical components in any safety, life
support, or other hazard related device or system, and AKM assumes no responsibility relating to
any such use, except with the express written consent of the Representative Director of AKM. As
used here:
(a) A hazard related device or system is one designed or intended for life support or maintenance
of safety or for applications in medicine, aerospace, nuclear energy, or other fields, in which its
failure to function or perform may reasonably be expected to result in loss of life or in
significant injury or damage to person or property.
(b) A critical component is one whose failure to function or perform may reasonably be expected
to result, whether directly or indirectly, in the loss of the safety or effectiveness of the device or
system containing it, and which must therefore meet very high standards of performance and
reliability.
• It is the responsibility of the buyer or distributor of an AKM product who distributes, disposes of, or
otherwise places the product with a third party to notify that party in advance of the above content and
conditions, and the buyer or distributor agrees to assume any and all responsibility and liability for
and hold AKM harmless from any and all claims arising from the use of said product in the absence
of such notification.
<MS0115-E-00>
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2001/10