e ADVANCED LINEAR DEVICES, INC. EN APPLICATIONS ALD110802/ALD110902 are monolithic quad/dual N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device electrical characteristics matching. Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics. They are versatile circuit elements useful as design components for a broad range of analog applications, such as basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. For most applications, connect V- and N/C pins to the most negative voltage potential in the system and V+ pin to the most positive voltage potential (or left open unused). All other pins must have voltages within these voltage limits. • Ultra low power (nanowatt) analog and digital circuits • Ultra low operating voltage(<0.2V) circuits • Sub-threshold biased and operated circuits • Precision current mirrors and current sources • Nano-Amp current sources • High impedance resistor simulators • Capacitive probes and sensor interfaces • Differential amplifier input stages • Discrete Voltage comparators and level shifters • Voltage bias circuits • Sample and Hold circuits • Analog and digital inverters • Charge detectors and charge integrators • Source followers and High Impedance buffers • Current multipliers • Discrete Analog switches / multiplexers The ALD110802/ALD110902 devices are built for minimum offset voltage and differential thermal response, and they are suited for switching and amplifying applications in <+0.1V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired, as these devices exhibit well controlled turn-off and sub-threshold characteristics and can be biased and operated in the sub-threshold region. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD110802/ALD110902 are suitable for use in very low operating voltage or very low power (nanowatt), precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result from extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature. For example, DC beta of the device at a drain current of 3mA and input leakage current of 30pA at 25°C is = 3mA/30pA = 100,000,000. PIN CONFIGURATION ALD110802 N/C* 1 GN1 2 DN1 3 S12 4 V- 5 FEATURES DN4 6 • Enhancement-mode (normally off) • Precision Gate Threshold Voltage of +0.2V • Matched MOSFET to MOSFET characteristics • Tight lot to lot parametric control • Low input capacitance • VGS(th) match (VOS) to 10mV • High input impedance — 1012Ω typical • Positive, zero, and negative VGS(th) temperature coefficient • DC current gain >108 • Low input and output leakage currents GN4 7 N/C* 8 ORDERING INFORMATION Operating Temperature Range* 0°C to +70°C 0°C to +70°C ALD110802PC ALD110802SC AB LE D VGS(th)= +0.2V GENERAL DESCRIPTION 16-Pin SOIC Package ® ALD110802/ALD110902 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY 16-Pin Plastic Dip Package TM EPAD 8-Pin Plastic Dip Package ALD110902PA 8Pin SOIC Package V- V- M1 M2 V+ VM4 M3 16 N/C* 15 GN2 14 DN2 13 V+ 12 S34 11 DN3 10 9 V- V- GN3 N/C* PC, SC PACKAGES ALD110902 N/C* 1 GN1 2 DN1 3 S12 4 V- V- M1 M2 V- 8 N/C* 7 GN2 6 DN2 5 V- PA, SA PACKAGES *N/C pins are internally connected. Connect to V- to reduce noise ALD110902SA * Contact factory for industrial or military temp. ranges or user-specified threshold voltage values. Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-Source voltage, VDS Gate-Source voltage, VGS Power dissipation Operating temperature range PA, SA, PC, SC package Storage temperature range Lead temperature, 10 seconds 10.6V 10.6V 500 mW 0°C to +70°C -65°C to +150°C +260°C OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. ALD110802 / ALD110902 Parameter Symbol Gate Threshold Voltage VGS(th) Offset Voltage VGS(th)1-VGS(th)2 VOS 2 Offset VoltageTempco TC ∆VOS 5 µV/ °C VDS1= VDS2 GateThreshold Voltage Tempco TC∆VGS(th) -1.7 0.0 +1.6 mV/ °C ID = 1µA ID = 20µA, VDS = 0.1V ID = 40µA On Drain Current IDS (ON) 12.0 3.0 mA VGS = + 9.7V VGS = + 4.2V VDS = + 5V Forward Transconductance GFS 1.4 mmho VGS = +4.2V VDS = + 9.2V Transconductance Mismatch ∆GFS 1.8 % Output Conductance GOS 68 µmho VGS = +4.2V VDS = +9.2V Drain Source On Resistance RDS (ON) Ω VDS = 0.1V VGS = +4.2V Drain Source On Resistance Mismatch ∆RDS (ON) 0.5 % Drain Source Breakdown Voltage BVDSX 10 V IDS = 1.0µA VGS = -0.8V Drain Source Leakage Current1 IDS (OFF) 10 100 4 pA nA VGS = -0.8V VDS =10V, TA = 125°C Gate Leakage Current1 IGSS 3 30 1 pA nA VDS = 0V VGS = 10V TA =125°C Input Capacitance CISS 2.5 pF Transfer Reverse Capacitance CRSS 0.1 pF Turn-on Delay Time ton 10 ns V+ = 5V RL= 5KΩ Turn-off Delay Time toff 10 ns V+ = 5V RL= 5KΩ 60 dB f = 100KHz Crosstalk Notes: 1 Min 0.18 Typ 0.20 Max 0.22 10 500 Unit Test Conditions V IDS =1µA VDS = 0.1V mV Consists of junction leakage currents ALD110802/ALD110902 Advanced Linear Devices 2