AWT6167 GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • • • • Integrated Vreg (regulated supply) Harmonic Performance ≤ -25 dBm High Efficiency (PAE) at Pmax: -GSM900, 56 % -DCS, 53 % +35 dBm GSM900 Output Power at 3.5 V • +33 dBm DCS Output Power at 3.5 V • 55 dB dynamic range • GPRS Class 12 Capable AWT6167 APPLICATIONS • Dual Band Handsets & PDAs 18 Pin 6 mm x 6 mm x 1.3 mm Amplifier Module PRODUCT DESCRIPTION number of external components required in the final application. Both PA die, GSM900 and DCS, are fabricated using state of the art InGaP HBT technology, known for it is proven reliability and temperature stability. As with previous generations, the AWT6167 integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6167 input and output terminals are internal matched to 50 ohms and DC blocked, reducing the VCC2 DCSIN BS TX MATCH MATCH DCSOUT CMOS BIAS/Integrated Power Control EN VCC_OUT VBATT H(s) VREG VRAMP GSM900IN MATCH MATCH VCC2 Figure 1: Block Diagram 01/2005 GSM900OUT AWT6167 BS GND 1 VCC2 DCS_IN 18 17 16 DCS_OUT 2 15 GND TX_EN 3 14 GND VBATT 4 13 VCC_OUT GND CEXT 5 12 VRAMP 6 11 GND GSM_IN 7 10 GSM_OUT 9 VCC 2 GND 8 Figure 2: Pinout (X- ray Top View) Table 1: Pin Description 2 PIN NAME 1 DCS_IN 2 BS 3 DESCRIPTION PIN NAME DCS RF Input 10 GSM_OUT Band Select Logic Input 11 GND Ground TX_EN TX Enable Logic Input 12 GND Ground 4 VBATT Battery Supply Connection 13 VCC_OUT 5 C EXT Bypass 14 GND Ground 6 VRAMP Analog Signal used to control the output power 15 GND Ground 7 GSM_IN GSM900 RF Input 16 DCS_OUT 8 VC C 2 VCC Control Input for GSM900 Pre-amplifier 17 GND Ground 9 GND Ground 18 VC C 2 VCC Control Input for DCS Pre-amplifier ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 DESCRIPTION GSM900 RF Output Control Voltage Output which must be connected to VCC2 DCS RF Output AWT6167 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VBATT) - +7 V RF Input Power (RFIN) - 11 dB m Control Voltages (VRAMP) -0.3 1.8 V Storage Temperature (TSTG) - 55 150 °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: ESD Ratings PARAMETER METHOD RATING UNIT ESD Threshold voltage (RF ports) HBM >2.5 kV ESD Threshold voltage (control inputs) HBM >2.5 kV Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during handling and mounting. Human body model HBM employed is resistance = 1500 Ω , capacitance = 100 pF. Table 4: Digital Inputs PARAMETER MIN TYP MAX UNIT Logic High Voltage (VIH) 1.2 - 3.0 V Logic Low Voltage (VIL) - - 0.5 V Logic High Current (IIH) - - 30 µA Logic Low Current (IIL) - - 30 µA Table 5: Control Logic Table MODE T x_E N BS PA Enable HIGH X GSM900 Mode HIGH LOW DCS Mode HIGH HIGH PA Disable LOW X ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 3 AWT6167 Table 6: Operating Ranges PARAMETER MIN TYP MAX UNIT Case Temperature (TC) -20 - 85 °C Supply Voltage (VBATT) 3.0 3.5 4.8 V Power Supply Leakage Current COMMENTS VBATT = 4.8 V, VRAMP = 0 V, TX_EN = LOW, No RF applied - 1 10 µA 0.2 - 1.6 V Turn on time (TON) - - 1 µs VRAMP = 0.2 V, TX_EN = LOW → High PIN = 5 dBm Turn off time (TOFF) - - 1 µs VRAMP = 0.2 V, TX_EN = HIGH → LOW PIN = 5 dBm Rise Time (TRISE) - - 1 µs POUT = -10 dBm →PMAX (within 0.2 dB) Fall Time (TFALL) - - 1 µs POUT = PMAX→ -10 dBm (within 0.2 dB) VRAMP Input Capacitance - 3 - pF VRAMP Input Current - - 10 µA Duty Cycle - - 50 % Control Voltage Range The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. 4 ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6167 Table 7: Electrical Characteristics for GSM900 (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH) PARAMETER MIN TYP MAX UNIT Operating Frequency (Fo) 880 - 915 MHz 0 3.0 5 dB m Output Power, PMAX 34.5 35.0 - dB m Freq = 880 to 915 MHz Degraded Output Power 32.5 33.5 - dB m VBATT = 3.0 V, TC = 85 OC, PIN = 0 dBm PAE @ PMAX - 56 - % Forward Isolation 1 - -35 - dB m TX_EN = LOW, PIN = 5 dBm Forward Isolation 2 - -25 - dB m TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm Cross Isolation (2Fo @ DCS Port) - -30 - dB m VRAMP = 0.2 V to VRAMP_MAX Harmonics 2fo n*Fo, (n > 3), Fo [ 12.75 GHz - -25 -30 - dB m Over all output power levels Input Power COMMENTS Freq = 880 to 915 MHz VSWR = 8:1 All Phases, POUT [ 34.5 dBm Stability Ruggedness - - -36 dB m FOUT < 1 GHz - - -30 dB m FOUT > 1 GHz - - 10:1 VSWR - -84 - dB m FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT [ 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT [ 34.5 dBm RX Noise Power Input VSWR All load phases, POUT < 34.5 dBm - -87 - dB m - 1.5:1 - - Over all output power levels ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 5 AWT6167 Table 8: Electrical Characteristics for DCS (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH) PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency (Fo) 1710 - 1785 MHz Input Power 0 3.0 5 dB m Output Power, PMAX 32 33 - dB m Degraded Output Power 30 31 - dB m VBATT = 3.0 V, TC = 85 OC, PIN = 0 dBm PAE @ PMAX - 53 - % Freq = 1710 to 1785 MHz Forward Isolation 1 - -40 - dB m TX_EN = LOW, VRAMP = 0.2 V PIN = 5 dBm, Forward Isolation 2 - -18 - dB m TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm Harmonics 2fo n*Fo, (n > 3), Fo [ 12.75 GHz - -20 -30 - dB m Over all output power levels VSWR = 8:1 All Phases, POUT [ 32 dBm Stability Ruggedness - - -36 dB m FOUT < 1 GHz - - -30 dB m FOUT > 1 GHz - - 10:1 VSWR RX Noise Power - -86 - dB m Input VSWR - 1.5:1 - - 6 All load phases, POUT < 32 dBm FTX = 1785 MHz, RBW = 100 kHz, FRX = 1805 to 1880 MHz, POUT [ 32 dBm Over all output power levels ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6167 APPLICATION INFORMATION TX ENABLE BATTERY VOLTAGE 2 1nF ++ 1nF ++ 47uF ++ 3 4 2.7pF ** 5 22nF ** DAC OUTPUT 6 10K* 27pF* 7 GND DCS/PCS_OUT DCS/PCS_PIN BS GND TX_EN GND VBAT T AWT6167 VCC_OUT CEXT GND VRAMP GND GSM_IN GSM850/900 RF INPUT GSM_OUT 8 DCS/PCS RF OUTPUT 16 15 14 13 1nF ** 12 11 10 GSM850/900 RF OUTPUT GND BAND SELECT 1 VCC2 DCS/PCS RF INPUT 17 VCC2 18 9 * Filtering may be required to filter noise from baseband. ** This component should be placed as close to the device pin as possible. ++ These components are recommended as good design practice for improving noise rejection characteristics. The values specified are not critical as they may not be required in the final application. Figure 3: Application Schematic ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 7 AWT6167 PACKAGE OUTLINE Figure 4: Package Outline Figure 5: Branding Specification 8 ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6167 NOTES ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 9 AWT6167 NOTES 10 ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6167 NOTES ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 11 AWT6167 ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005