RFMD RF3108PCBA

RF3108
2
TRIPLE-BAND GSM/DCS/PCS
POWER AMP MODULE
Typical Applications
• 3V Dual-Band/Triple-Band GSM Handsets
• Portable Battery-Powered Equipment
• Commercial and Consumer Systems
• GPRS Compatible
POWER AMPLIFIERS
Product Description
2
1.40
The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS
applications. The device is self-contained with 50Ω input
and output terminals. The device is manufactured on an
advanced GaAs HBT process, and has been designed for
use as the final RF amplifier in GSM/DCS and PCS hand
held-digital cellular equipment and other applications in
the 880MHz to 915MHz and 1710MHz to 1910MHz
bands. On-board power control provides over 70dB of
control range with an analog voltage input, and provides
power down with a logic "low" for standby operation. The
device is packaged in an ultra-small (9mmx10mm) LCC,
minimizing the required board space.
1.40
1.40
10.0 + 0.10
1.40
1.00
typ.
1.40
1.40
1.30
0.60
typ.
0.30
0.90
typ.
0.38
Ref.
1.55
+ 0.10
9.0 + 0.10
Note orientation of Pin 1.
NOTE: Shaded area represents Pin 1.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
GaAs MESFET
SiGe HBT
Si CMOS
Package Style: Module
Features
• Single 2.9V to 4.7V Supply Voltage
• +35.5dBm GSM Output Pwr at 3.5V
VCC
1
14
PCS OUT
PCS IN
2
13
GND
PCS VAPC
3
12
GND
GND
4
11
VCC
GSM VAPC
5
10
GND
GSM IN
6
9
GND
VCC
7
8
GSM OUT
• +33.0dBm DCS/PCS Output Pwr at 3.5V
• 55% GSM and 50% DCS/PCS Efficiency
• Supports GSM, E-GSM and DCS/PCS
• 9mmx10mm Package Size
Ordering Information
RF3108
RF3108 PCBA
Functional Block Diagram
Rev A3 010702
Triple-Band GSM/DCS/PCS Power Amp Module
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
2-261
RF3108
Absolute Maximum Ratings
Parameter
POWER AMPLIFIERS
2
Supply Voltage
Power Control Voltage (VAPC1,2)
DC Supply Current
Input RF Power
Duty Cycle at Max Power
Output Load VSWR
Operating Case Temperature
Storage Temperature
Parameter
Rating
Unit
-0.5 to +6.0
-0.5 to +3.0
2400
+13
50
8:1
-40 to +85
-55 to +150
VDC
V
mA
dBm
%
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
°C
°C
Specification
Min.
Typ.
Max.
Unit
Temp=+25°C, VCC =3.5V, VAPCGSM =2.6V,
PIN =6dBm, Freq=880MHz to 915MHz,
25% Duty Cycle, Pulse Width=1154µs
Overall (GSM Mode)
Operating Frequency Range
Maximum Output Power
Total Efficiency
Input Power for Max Output
Output Noise Power
Forward Isolation
Second Harmonic
Third Harmonic
All other non harmonic spurious
Input Impedance
Input VSWR
Output Load VSWR
Condition
+34.5
+32.0
47
+4
880 to 915
35.5
55
+6
-40
-50
+8
-72
MHz
dBm
dBm
%
dBm
dBm
-81
dBm
-30
-35
-43
-36
dBm
dBc
dBc
dBm
Ω
50
2.5:1
8:1
Output Load Impedance
Ω
50
Temp = 25°C, VCC =3.5V, VAPCGSM =2.6V
Temp=+85 °C, VCC =2.9V, VAPCGSM =2.6V
At POUT,MAX, VCC =3.5V
RBW=100kHz, 925MHz to 935MHz,
POUT > 34.5dBm
RBW=100kHz, 935MHz to 960MHz,
POUT > 34.5dBm
VAPCGSM =0.2V, PIN=+8dBm
POUT,MAX-5dB<POUT<POUT,MAX
Spurious<-36dBm, VAPCGSM =0.2V to 2.6V,
RBW=100kHz
Load impedance presented at RF OUT pad
Power Control VAPC1
Power Control “ON”
Power Control “OFF”
Power Control Range
Gain Control Slope
APC Input Capacitance
APC Input Current
2.6
0.2
0.5
70
100
4.5
Turn On/Off Time
10
5
10
2
V
V
dB
dB/V
pF
mA
µA
µS
Max. POUT, Voltage supplied to the input
Min. POUT, Voltage supplied to the input
VAPC1,2 =0.2V to 2.6V
POUT =-10dBm to 35dBm
DC to 2MHz
VAPC =2.6V
VAPC =0V
VAPC =0 to 2.6V
V
V
A
µA
Specifications
Nominal operating limits, POUT <+33dBm
DC Current at POUT,MAX
PIN <-30dBm, VAPC1,2 =0.2V,
Temp=-40to+85 °C
Overall Power Supply
Power Supply Voltage
3.5
2.9
Power Supply Current
2-262
4.7
2
1
10
Rev A3 010702
RF3108
Specification
Min.
Typ.
Max.
Unit
Temp=25°C, VCC =3.5V,
VAPCDCS/PCS =2.6V, PIN =6dBm,
Freq=1710MHz to 1910MHz,
25% Duty Cycle, Pulse Width=1154µs
Overall (DCS/PCS Mode)
Operating Frequency Range
Maximum Output Power
Total Efficiency
Recommended Input Power
Range
Output Noise Power
Forward Isolation
Second Harmonic
Third Harmonic
All other spurious
Input Impedance
Input VSWR
Output Load VSWR
Condition
+32
1710 to 1910
+33
MHz
dBm
31.5
29.0
32.5
29.5
dBm
dBm
29.5
45
30
52
dBm
%
40
47
%
+4
+6
-37
-60
-65
50
-
+8
dBm
-77
dBm
-30
-45
-50
-36
dBm
dBc
dBc
dBm
Ω
2.5
8:1
Output Load Impedance
Ω
50
Temp=25°C, VCC =3.5V,
VAPCDCS/PCS =2.6V, 1710MHz to 1785MHz
1850MHz to 1910MHz
Temp=+85°C, VCC =2.9V, VAPC =2.6V,
1850MHz to 1910MHz
1710MHz to 1785MHz
At POUT,MAX, VCC =3.5V,
1710MHz to 1785MHz
At POUT,MAX, VCC =3.5V,
1850MHz to 1910MHz
RBW =100kHz, 1805MHz to 1880MHz and
1930MHz to 1990MHz,
POUT > 34.5dBm, VCC =3.5V
VAPCDCS/PCS =0.2V, PIN =+8dBm
POUT, = +32.5dBm
POUT,MAX -5dB<POUT <POUT,MAX
Spurious <-36dBm,
VAPCDCS/PCS =0.2V to 2.6V, RBW =100kHz
Load impedance presented at RF OUT pin
Power Control VAPC 2
Power Control “ON”
Power Control “OFF”
Power Control Range
Gain Control Slope
APC Input Capacitance
APC Input Current
2.6
0.2
62
0.5
68
100
4.5
Turn On/Off TIme
10
5
10
100
V
V
dB
dB/V
pF
mA
µA
ns
Max. POUT, Voltage supplied to the input
Min. POUT, Voltage supplied to the input
VAPC1,2 =0.2V to 2.6V, PIN =+8dBm
POUT =-10dBm to +33dBm
DC to 2MHz
VAPC =2.6V
VAPC=0V
VAPC =0to2.6V
V
V
A
µA
Specifications
Nominal operating limits, POUT <+33dBm
DC Current at POUT,MAX
PIN <-30dBm, VAPC1,2 =0.2V,
Temp=-40to+85°C
Overall Power Supply
Power Supply Voltage
3.5
2.9
Power Supply Current
Rev A3 010702
4.7
1.3
1
10
2-263
2
POWER AMPLIFIERS
Parameter
RF3108
Pin
1
2
3
POWER AMPLIFIERS
2
Function Description
Interface Schematic
Power Supply for the driver stage of the DCS/PCS band.
VCC1
DCS/PCS IN RF Input to the DCS/PCS band. This is a 50Ω input.
DCS/PCS Power control for the pre-amplifier, driver, and output stage of the DCS/
PCS band.
VAPC
4
5
GND
GSM VAPC
6
7
8
GSM IN
VCC2
GSM OUT
9
10
11
GND
GND
VCC3
12
13
14
GND
GND
DCS/PCS
OUT
GND
Pkg
Base
2-264
Ground connection to overall package.
Power control for the pre-amplifier, driver, and output stage of the GSM
band.
RF input to the GSM band. This is a 50Ω input.
Power supply for the driver stage of the GSM band.
RF output for the GSM band. This is a 50Ω output. The output load line
matching is contained internal to the package.
Ground connection to overall package.
Ground connection to overall package.
Power supply for the pre-amplifier and output stage for both the DCS/
PCS and GSM bands.
Ground connection to overall package.
Ground connection to overall package.
RF output for the DCS/PCS band. This is a 50Ω output. The output
load line matching is contained internal to the package.
Ground connection to overall package.
Rev A3 010702
RF3108
Theory of Operation and Application Information
Power control for the GSM 900MHz band is provided
through pin 5 of the device, and pin 3 for the DCS/PCS
band. The VAPC inputs do not contain any internal
bypass capacitors and will require some external filtering. Because the VAPC filtering capacitor is external to
the device, the user has the option of choosing a
capacitor value that meets the control loop BW and filtering requirement for various applications. In most typical applications with a closed loop power control, the
recommended bypass capacitor for this input is
approximately 33pF for the GSM band, and 12pF for
the DCS/PCS band. However in open loop operation, a
10nF VAPC bypass capacitor is recommended for both
bands to filter noise from the external VAPC source. A
10nF capacitor is installed on pins 3 and 5 on the current evaluation board (see the evaluation board schematic). Noise on the VAPC input will degrade the noise
power performance of the device, so care should be
used to provide a clean VAPC input signal. This is especially important when measuring noise power or stability performance.
The GSM 900MHz band provides 32dB and the DCS/
PCS 1710MHz to 1910MHz band provides 28dB of
small signal gain at full output power. Therefore, the
drive level required to fully saturate the output is
+4dBm for each band. Based upon HBT (Heterojunction Bipolar Transistor) technology, the part requires
only a single positive 3V supply to operate to full specification. The DCS/PCS band input is located at pin 2
of the device and requires no external components.
The GSM 900MHz band input is located at pin 6 of the
device and also does not require external components.
However, a 180Ω resistor is included at the input of the
GSM band to improve the input impedance and isolation performance at low VAPC levels. The output for
both high and low bands are internally matched to 50Ω
at the output of pin 14 and 8. A 50Ω microstrip should
be used to interface to the input and output connections.
The voltage supply VCC contains internal bypass
capacitors and inductors to filter unwanted noise on
the DC supply voltage. However, the main VCC input to
the device at pin 11 requires some additional bypass
capacitors as shown in the evaluation board schematic. C5 (1uF) and C4 (3.3uF) are required to
improve the stability performance.
Rev A3 010702
All the internal ground connections are connected to a
series of ground pads located on the backside of the
package as shown in the pin out diagram. Pins 4, 9,
10, 12, and 13 are also ground connections. The final
stages of both bands are connected to the ground
pads on the backside of the package. Therefore this
ground connection is essential to dissipate heat and to
provide proper current flow. Refer to the evaluation
board layout as an example of the vias locations and
quantity required for proper connection.
2-265
2
POWER AMPLIFIERS
The RF3108 is a triple-band, GSM/DCS/PCS power
amplifier with two separate RF inputs and outputs that
are internally matched to 50Ω. Pins 2 and 14 of the
device provide the RF input and output for the DCS/
PCS band, which is optimized for performance
between 1710MHz and 1910MHz. Pins 5 and 8 of the
device provide the RF input and output for the GSM
band, which is optimized for performance between
880MHz and 915MHz. Both bands include an internal
DC-blocking capacitor to protect the device from external DC source inputs and block internal DC from exiting the inputs and outputs of the module. The
performance is similar to the performance of the
RF2173 and RF2174 MIMIC devices used in dual- or
triple-band applications. However, the RF3108 module
includes the matching and bypass capacitors required
for operation internal to the 9mmx10mm module.
However, some external components are required to
improve stability, isolation and noise power performance. These components are included on the evaluation board and schematic, and will be described in the
following paragraphs.
RF3108
Pin Out
POWER AMPLIFIERS
2
VCC
1
PCS IN
2
GND
GND
GND
GND
14
GND
GND
13
GND
GND
GND
12
GND
GND
GND
11
VCC
GND
GND
10
GND
GND
GND
9
GND
GND
GND
8
PCS OUT
GND
PCS VAPC
3
GND
4
GSM VAPC
5
GND
GND
GND
GSM IN
6
VCC
7
GND
GND
GSM OUT
Top View
2-266
Rev A3 010702
RF3108
Application Schematic
VCC
1
14
2
13
3
12
4
11
5
10
6
9
7
8
PCS/DCS
RF OUTPUT
50 Ω µstrip
DCS/PCS
VAPC
GSM
VAPC
VCC
1 µF
4.7 µF
50 Ω µstrip
GSM
RF IN
50 Ω µstrip
VCC
GSM
RF OUTPUT
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
VCC
C1*
1 nF
P1
C2*
10 nF
P2
1
GND
CON1
J1
DCS/PCS
RF IN
50 Ω µstrip
J5
DCS/PCS
VAPC2
50 Ω µstrip
J6
GSM
VAPC1
50 Ω µstrip
J3
GSM
RF IN
C7
10 nF
C6
10 nF
50 Ω µstrip
R1
180 Ω
VCC
C3*
10 nF
Rev A3 010702
P2-1
1
CON1
50 Ω µstrip
1
14
2
13
3
12
4
11
5
10
6
9
7
8
VCC
J2
PCS/DCS
RF OUTPUT
VCC
C5
1 µF
+
C4
3.3 µF
50 Ω µstrip
J4
GSM
RF OUTPUT
3108400B
Components with (*) following the reference designator
should not be populated on the evaluation board.
2-267
2
POWER AMPLIFIERS
50 Ω µstrip
50 Ω µstrip
DCS/PCS
RF IN
RF3108
Evaluation Board Layout
Board Size 2.0” x 2.0”
Board Thickness 0.031”; Board Material FR-4; Multi-Layer
POWER AMPLIFIERS
2
2-268
Rev A3 010702
RF3108
-35.0
2nd and 3rd Harmonic Performance
GSM Band @3.5V VCC, +6dBm PIN, 2.6V VAPC
Isolation Performance GSM Band
@ 3.5V VCC, 2.6V VAPC
-29.0
2nd Fo(dBc)
Iso@+8dBm Pin
3rd Fo(dBc)
Iso@+4dBm Pin
-30.0
Iso@+6dBm Pin
-40.0
-45.0
2
-32.0
POWER AMPLIFIERS
Isolation (dBm)
Harmonic Level (dBc)
-31.0
-33.0
-34.0
-50.0
-35.0
-55.0
880.0
885.0
890.0
895.0
900.0
905.0
910.0
-36.0
880.0
915.0
885.0
890.0
Frequency
Power and Efficiency Performance
@ 3.5V VCC, 2.6V VAPC, +6dBm PIN
36.0
895.0
900.0
905.0
910.0
915.0
Frequency (MHz)
53.0
Power Control Response
@ 3.5V VCC, 2.6V VAPC, +6 dBm PIN, 900 MHz
40.0
60.0
Power
52.0
30.0
Efficiency
35.8
50.0
51.0
20.0
50.0
10.0
48.0
0.0
30.0
-10.0
35.2
Efficiency (%)
49.0
35.4
Power (dBm)
40.0
Efficiency (%)
Power (dBm)
35.6
20.0
47.0
-20.0
46.0
-30.0
45.0
915.0
-40.0
35.0
10.0
Power(+6dBm Pin)
Efficiency (+6dBm Pin)
34.8
880.0
885.0
890.0
895.0
900.0
905.0
910.0
0.0
0.1 0.3 0.4 0.6 0.7 0.9 1.0 1.2 1.3 1.5 1.6 1.8 1.9 2.1 2.2 2.4 2.5 2.7 2.8
Frequency
-36.0
Power Control Voltage (V)
Isolation Performance DCS/PCS Band
@ 3.5V VCC, 2.6VAPC DCS/PCS BAND
-33.0
Isolation Performance DCS/PCS Band
@ 3.5V VCC, 2.6VAPC DCS/PCS Band
Iso@+4dBm Pin
Iso@+6dBm Pin
-36.5
-34.0
Iso@+8dBm Pin
-35.0
Isolation (dBm)
Isolation (dBm)
-37.0
-37.5
-38.0
-36.0
-37.0
Iso@+4dBm Pin
-38.5
-38.0
Iso@+6dBm Pin
Iso@+8dBm Pin
-39.0
1700.0 1710.0 1720.0 1730.0 1740.0 1750.0 1760.0 1770.0 1780.0 1790.0
Frequency
Rev A3 010702
-39.0
1800.0
1820.0
1840.0
1860.0
1880.0
1900.0
Frequency
2-269
RF3108
DCS Band Power and Efficient Performance
@ 3.5V VCC, 2.6V VAPC, +8dBm PIN
35.0
PCS Band Power and Efficiency Performance
@ 3.5V VCC, 2.6V VAPC, +8dBm PIN
35.0
52.0
51.0
Power (dBm)
34.5
Efficiency (%)
34.5
50.0
49.0
34.0
32.5
33.5
33.0
45.0
32.5
Efficiency (%)
46.0
Power (dBm)
33.0
47.0
Efficiency (%)
Power (dBm)
33.5
44.0
43.0
32.0
32.0
42.0
41.0
Power (dBm)
31.5
31.5
Efficiency
31.0
40.0
1700.0 1710.0 1720.0 1730.0 1740.0 1750.0 1760.0 1770.0 1780.0 1790.0
31.0
1800.0
39.0
1820.0
1840.0
Frequency
-50.0
1860.0
1880.0
1900.0
Frequency
2nd and 3rd Harmonic Performance (DCS/PCS Band)
@ 3.5V VCC, +6dBm PIN, 2.6V VAPC
-55.0
Power Control Response
@3.5V, 2.6V VAPC, +6dBm PIN, 1750MHz
40
6
Power
2nd Fo(dBc)
30
5
Efficiency
3rd Fo(dBc)
20
4
Power (dBm)
-60.0
Harmonic (dBc)
-65.0
10
3
0
2
-10
-70.0
1
-20
-75.0
0
-30
-80.0
1700.0
-40
1730.0
1760.0
1790.0
1820.0
1850.0
1880.0
0.2
1910.0
0.4
0.6
0.8
1
Frequency
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
Power Control Voltage (V)
Power Control Response
@3.5V VCC, 2.6V VAPC, +6dBm PIN, 1850MHz
40.0
60.0
Power
30.0
Efficiency
50.0
20.0
10.0
0.0
30.0
-10.0
Efficiency (%)
40.0
Power (dBm)
POWER AMPLIFIERS
2
34.0
48.0
20.0
-20.0
10.0
-30.0
-40.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
Power Control Voltage (V)
2-270
Rev A3 010702