ANADIGICS AWT6166

AWT6166
GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
ADVANCED PRODUCT INFORMATION - Rev 0.3
FEATURES
•
•
•
•
Integrated Vreg (regulated supply)
Harmonic Performance ≤ -25 dBm
High Efficiency (PAE) at Pmax:
-GSM850, 54%
-GSM900, 56%
-DCS, 53%
-PCS, 51%
+35 dBm GSM850/900 Output Power at 3.5 V
•
+33 dBm DCS/PCS Output Power at 3.5 V
•
55 dB dynamic range
•
GPRS Class 12 Capable
APPLICATIONS
•
18 Pin
6 mm x 6 mm x 1.3 mm
Amplifier Module
Dual/Tri/Quad Band Handsets & PDAs
PRODUCT DESCRIPTION
As with previous generations, the AWT6166
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
number of external components required in the final
application. Both PA die, GSM850/900 and DCS/
PCS, are fabricated using state of the art InGaP HBT
technology, known for it is proven reliability and
temperature stability.
The AWT6166 input and output terminals are internal
matched to 50 ohms and DC blocked, reducing the
VCC2
DCS/PCSIN
BS
TX
MATCH
MATCH
DCS/PCSOUT
CMOS BIAS/Integrated Power Control
EN
VCC_OUT
VBATT
H(s)
CEXT
VRAMP
GSM850/900IN
MATCH
MATCH
VCC2
Figure 1: Block Diagram
01/2005
GSM850/900OUT
AWT6166
BS
GND
1
VCC2
DCS/PCS_IN
18
17
16
DCS/PCS_OUT
2
15
GND
TX_EN
3
14
GND
VBATT
4
13
VCC_OUT
CEXT
5
12
GND
VRAMP
6
11
GND
GSM_IN
7
10
GSM_OUT
9
VCC 2
GND
8
Figure 2: Pinout (X- ray Top View)
Table 1: Pin Description
PIN
1
2
NAME
DESCRIPTION
PIN
NAME
10
GSM_OUT
Band Select Logic Input
11
GND
Ground
TX Enable Logic Input
12
GND
Ground
DCS/PCS_IN DCS/PCS RF Input
DESCRIPTION
GSM850/900 RF Output
2
BS
3
Tx_EN
4
VBATT
Battery Supply
Connection
13
VCC_OUT
5
C EXT
Bypass
14
GND
Ground
6
VRAMP
Analog Signal used to
control the output power
15
GND
Ground
7
GSM_IN
GSM850/900 RF Input
16
8
VCC2
VCC Control Input for
GSM850/900
Pre-amplifier
17
GND
Ground
9
GND
Ground
18
VCC2
VCC Control Input for
DCS/PCS
Pre-amplifier
Control Voltage Output
which must be connected
to VCC2
DCS/PCS_OUT DCS/PCS RF Output
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VBATT)
-
+7
V
RF Input Power (RFIN)
-
11
dB m
Control Voltages (VRAMP)
-0.3
1.8
V
Storage Temperature (TSTG)
- 55
150
°C
Stresses in excess of the absolute ratings may cause
permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
Table 3: ESD Ratings
PARAMETER
METHOD
RATING
UNIT
ESD Threshold voltage (RF ports)
HBM
>2.5
kV
ESD Threshold voltage (control inputs)
HBM
>2.5
kV
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during
handling and mounting. Human body model HBM employed is resistance = 1500 Ω ,
capacitance = 100 pF.
Table 4: Digital Inputs
PARAMETER
MIN
TYP
MAX
UNIT
Logic High Voltage (VIH)
1.2
-
3.0
V
Logic Low Voltage (VIL)
-
-
0.5
V
Logic High Current (IIH)
-
-
30
µA
Logic Low Current (IIL)
-
-
30
µA
Table 5: Control Logic Table
MODE
T x_E N
BS
PA Enable
HIGH
X
GSM850/900 Mode
HIGH
LOW
DCS/PCS Mode
HIGH
HIGH
PA Disable
LOW
X
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
3
AWT6166
Table 6: Operating Ranges
PARAMETER
MIN
TYP
MAX
UNIT
Case Temperature (TC)
-20
-
85
°C
Supply Voltage (VBATT)
3.0
3.5
4.8
V
Power Supply Leakage Current
COMMENTS
VBATT = 4.8 V,
VRAMP = 0 V,
TX_EN = LOW,
No RF applied
-
1
10
µA
0.2
-
1.6
V
Turn on time (TON)
-
-
1
µs
VRAMP = 0.2 V, TX_EN =
LOW → High
PIN = 5 dBm
Turn off time (TOFF)
-
-
1
µs
VRAMP = 0.2 V, TX_EN =
HIGH → LOW
PIN = 5 dBm
Rise Time (TRISE)
-
-
1
µs
POUT = -10 dBm →PMAX
(within 0.2 dB)
Fall Time (TFALL)
-
-
1
µs
POUT = PMAX→ -10 dBm
(within 0.2 dB)
VRAMP Input Capacitance
-
3
-
pF
VRAMP Input Current
-
-
10
µA
Duty Cycle
-
-
50
%
Control Voltage Range
The device may be operated safely over these conditions; however, parametric performance is
guaranteed only over the conditions defined in the electrical specifications.
4
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
Table 7: Electrical Characteristics for GSM850
(VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH)
PARAMETER
MIN
TYP
MAX
UNIT
Operating Frequency (Fo)
824
-
849
MHz
0
3.0
5
dB m
Output Power, PMAX
34.5
35.0
-
dB m
Freq = 824 to 849 MHz
Degraded Output Power
32.5
33.5
-
dB m
VBATT = 3.0 V, TC = 85 OC,
PIN = 0 dBm
PAE @ PMAX
-
54
-
%
Forward Isolation 1
-
-35
-
dB m
TX_EN = LOW, VRAMP = 0.2 V
PIN = 5 dBm,
Forward Isolation 2
-
-25
-
dB m
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Cross Isolation
(2Fo @ DCS/PCS Port)
-
-30
-
dB m
VRAMP = 0.2 V to 1.6 V
Harmonics
2fo
n*Fo, (n > 3), Fo [ 12.75 GHz
-
-25
-30
-
dB m
Over all output power levels
Input Power
COMMENTS
Freq = 824 to 849 MHz
VSWR = 8:1 All Phases, POUT [ 34.5 dBm
Stability
Ruggedness
-
-
-36
dB m
FOUT < 1 GHz
-
-
-30
dB m
FOUT > 1 GHz
-
-
10:1
VSWR
RX Noise Power
-
-87
-
dB m
Input VSWR
-
1.5:1
-
-
All load phases,
POUT < 34.5 dBm
FTX = 849 MHz,
RBW = 100 kHz,
FRX = 869 to 894 MHz,
POUT [ 34.5 dBm
Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
5
AWT6166
Table 8: Electrical Characteristics for GSM900
(VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH)
PARAMETER
MIN
TYP
MAX
UNIT
Operating Frequency (Fo)
880
-
915
MHz
0
3.0
5
dB m
Output Power, PMAX
34.5
35.0
-
dB m
Freq = 880 to 915 MHz
Degraded Output Power
32.5
33.5
-
dB m
VBATT = 3.0 V, TC = 85 OC,
PIN = 0 dBm
PAE @ PMAX
-
56
-
%
Forward Isolation 1
-
-35
-
dB m
TX_EN = LOW, VRAMP = 0.2 V
PIN = 5 dBm,
Forward Isolation 2
-
-25
-
dB m
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Cross Isolation
(2Fo @ DCS/PCS Port)
-
-30
-
dB m
VRAMP = 0.2 V to 1.6 V
Harmonics
2fo
n*Fo, (n > 3), Fo [ 12.75 GHz
-
-25
-30
-
dB m
Over all output power levels
Input Power
COMMENTS
Freq = 880 to 915 MHz
VSWR = 8:1 All Phases, POUT [ 34.5 dBm
Stability
Ruggedness
-
-
-36
dB m
FOUT < 1 GHz
-
-
-30
dB m
FOUT > 1 GHz
-
-
10:1
VSWR
-
-84
-
dB m
FTX = 915 MHz,
RBW = 100 kHz,
FRX = 925 to 935 MHz,
POUT [ 34.5 dBm
FTX = 915 MHz,
RBW = 100 kHz,
FRX = 935 to 960 MHz,
POUT [ 34.5 dBm
RX Noise Power
Input VSWR
6
All load phases,
POUT < 34.5 dBm
-
-87
-
dB m
-
1.5:1
-
-
Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
Table 9: Electrical Characteristics for DCS
(VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH)
PARAMETER
MIN
TYP
MAX
UNIT
COMMENTS
Operating Frequency
1710
-
1785
MHz
Input Power
0
3.0
5
dB m
Output Power, PMAX
32
33
-
dB m
Degraded Output Power
30
31
-
dB m
VBATT = 3.0 V, TC = 85 OC,
PIN = 0 dBm
PAE @ PMAX
-
53
-
%
Freq = 1710 to 1785 MHz
Forward Isolation 1
-
-40
-
dB m
TX_EN = LOW, VRAMP = 0.2 V
PIN = 5 dBm,
Forward Isolation 2
-
-18
-
dB m
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Cross Isolation
(2Fo @ DCS/PCS Port)
-
-30
-
dB m
VRAMP = 0.2 V to 1.6 V
Harmonics
2fo
n*Fo, (n > 3), Fo [ 12.75 GHz
-
-20
-30
-
dB m
Over all output power levels
VSWR = 8:1 All Phases, POUT [ 32 dBm
Stability
Ruggedness
-
-
-36
dB m
FOUT < 1 GHz
-
-
-30
dB m
FOUT > 1 GHz
-
-
10:1
VSWR
RX Noise Power
-
-86
-
dB m
Input VSWR
-
1.5:1
-
-
All load phases,
POUT < 32 dBm
FTX = 1785 MHz,
RBW = 100 kHz,
FRX = 1805 to 1880 MHz,
POUT [ 32 dBm
Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
7
AWT6166
Table 10: Electrical Characteristics for PCS
(VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH)
PARAMETER
MIN
TYP
MAX
UNIT
COMMENTS
Operating Frequency
1850
-
1910
MHz
Input Power
0
3.0
5
dB m
Output Power, PMAX
32
33
-
dB m
Degraded Output Power
30
31
-
dB m
VBATT = 3.0 V, TC = 85 OC,
PIN = 0 dBm
PAE @ PMAX
-
51
-
%
Freq = 1850 to 1910 MHz
Forward Isolation 1
-
-40
-
dB m
TX_EN = LOW, VRAMP = 0.2 V
PIN = 5 dBm,
Forward Isolation 2
-
-18
-
dB m
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Harmonics
2fo
n*Fo, (n > 3), Fo [ 12.75 GHz
-
-20
-30
-
dB m
Over all output power levels
VSWR = 8:1 All Phases, POUT [ 32 dBm
Stability
Ruggedness
-
-
-36
dB m
FOUT < 1 GHz
-
-
-30
dB m
FOUT > 1 GHz
-
-
10:1
VSWR
RX Noise Power
-
-86
-
dB m
Input VSWR
-
1.5:1
-
-
8
All load phases,
POUT < 32 dBm
FTX = 1910 MHz,
RBW = 100 kHz,
FRX = 1930 to 1990 MHz,
POUT [ 32 dBm
Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
APPLICATION INFORMATION
TX ENABLE
BATTERY
VOLTAGE
2
1nF ++
1nF ++
47uF ++
3
4
2.7pF **
5
22nF **
DAC OUTPUT
6
10K* 27pF*
7
GND
DCS/PCS_OUT
DCS/PCS_PIN
BS
GND
TX_EN
GND
VBAT
T
AWT6166
VCC_OUT
CEXT
GND
VRAMP
GND
GSM_IN
GSM850/900 RF INPUT
GSM_OUT
8
DCS/PCS RF OUTPUT
16
15
14
13
1nF **
12
11
10
GSM850/900 RF OUTPUT
GND
BAND SELECT
1
VCC2
DCS/PCS RF INPUT
17
VCC2
18
9
* Filtering may be required to filter noise from baseband.
** This component should be placed as close to the device pin as possible.
++ These components are recommended as good design practice for improving noise
rejection characteristics. The values specified are not critical as they may not be required in the
final application.
Figure 3: Application Schematic
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
9
AWT6166
PACKAGE OUTLINE
Figure 4: Package Outline
Figure 5: Branding Specification
10
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
AWT6166
NOTES
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005
11
AWT6166
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: [email protected]
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
12
ADVANCED PRODUCT INFORMATION - Rev 0.3
01/2005