APTM120U10DAG Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C SK S Application • Zero Current Switching resonant mode D G DK S D Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 116 86 464 ±30 120 3290 24 50 3200 Unit V A V mΩ W A July, 2006 G mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120U100DAG Rev 1 SK APTM120U10DAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions T j = 25°C VGS = 0V,VDS = 1000V T j = 125°C VGS = 10V, ID = 58A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 100 Min VGS = 10V VBus = 600V ID = 116A Test Conditions Unit mΩ V nA nF nC 17 ns 245 62 5 mJ 4.6 9.2 mJ 5.6 Min 1200 Typ Tj = 25°C Tj = 125°C Max 1500 2500 Tj = 125°C 180 2 2.3 1.8 Tj = 25°C 370 Tj = 125°C 500 Tj = 25°C 3.9 Tj = 125°C 20.7 T c = 70°C www.microsemi.com Max mA 20 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 116A, R G = 1.2Ω IF = 180A VR = 800V di/dt = 800A/µs Unit 716 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 116A, R G = 1.2Ω IF = 180A IF = 360A IF = 180A Typ 28.9 4.4 0.8 1100 Max 1 3 120 5 ±400 128 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 116A R G =1.2Ω VR=1200V Typ 3 Test Conditions VGS = 0V VDS = 25V f = 1MHz Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage Min VGS = 0V,VDS = 1200V Unit V µA A 2.5 V ns July, 2006 IDSS Characteristic µC 2–6 APTM120U100DAG Rev 1 Symbol APTM120U10DAG Thermal and package characteristics Symbol Characteristic Min Transistor Series diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.038 0.22 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM120U100DAG Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTM120U10DAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 0.035 0.9 0.03 0.7 0.025 0.02 0.5 0.015 0.3 0.01 0.1 0.05 0.005 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 320 VGS =15, 10V 240 200 6V 160 5.5V 120 80 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 280 7V ID, Drain Current (A) 5V 40 240 200 160 T J=-55°C 120 T J=25°C 80 40 4.5V 0 0 5 10 15 20 25 TJ=125°C 0 30 0 ID, DC Drain Current (A) VGS=10V 1.1 V GS=20V 1 4 5 6 7 0.9 0.8 100 80 60 40 20 0 0 40 80 120 160 200 240 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance 1.2 3 120 Normalized to VGS =10V @ 58A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 4–6 APTM120U100DAG Rev 1 I D, Drain Current (A) 280 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=58A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by RDS on 100 1ms 10 10ms Single pulse TJ=150°C TC=25°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=116A TJ=25°C 12 10 V DS=240V VDS=600V 8 V DS=960V 6 4 2 0 0 300 600 900 1200 1500 Gate Charge (nC) July, 2006 0 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM120U100DAG Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120U10DAG APTM120U10DAG Delay Times vs Current Rise and Fall times vs Current 100 t d(off) 250 200 V DS=800V RG=1.2Ω T J=125°C L=100µH 150 100 50 VDS=800V RG=1.2Ω TJ=125°C L=100µH 80 tr and tf (ns) td(on) and td(off) (ns) 300 60 tr 40 20 td(on) 0 0 30 60 90 120 150 180 30 I D, Drain Current (A) 90 120 150 I D, Drain Current (A) 180 24 V DS =800V RG =1.2Ω T J=125°C L=100µH 12 Switching Energy (mJ) Switching Energy (mJ) 60 Switching Energy vs Gate Resistance Switching Energy vs Current 16 Eon Eoff 8 4 0 V DS=800V ID=116A T J=125°C L=100µH 20 16 Eoff 12 Eon 8 Eoff 4 30 60 90 120 150 ID, Drain Current (A) 180 0 2 4 6 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 150 ZCS 125 Hard switching 100 IDR, Reverse Drain Current (A) 175 Frequency (kHz) tf VDS=800V D=50% RG=1.2Ω T J=125°C T C=75°C 75 50 25 0 50 70 90 ID, Drain Current (A) 110 T J=150°C T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120U100DAG Rev 1 July, 2006 30 100