APTM120U10DAG Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance S D Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant SK G Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 116 86 464 ±30 120 3290 24 50 3200 Unit V A V mΩ W A June, 2008 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120U100DAG Rev 2 Symbol VDSS APTM120U10DAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 1200V Tj = 25°C VGS = 0V,VDS = 1000V Tj = 125°C VGS = 10V, ID = 58A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V Typ 100 3 Max 1 3 120 5 ±400 Unit Max Unit mA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 116A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 28.9 4.4 0.8 nF 1100 nC 128 716 20 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 116A RG =1.2Ω 17 ns 245 62 5 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω mJ 4.6 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω 9.2 mJ 5.6 Series diode ratings and characteristics IF VF Maximum Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min 1200 Tj = 25°C Tj = 125°C IF = 180A VR = 800V di/dt = 800A/µs www.microsemi.com Max 1500 2500 Tj = 125°C 180 2 2.3 1.8 Tj = 25°C 370 Tj = 125°C 500 Tj = 25°C 3.9 Tj = 125°C 20.7 Tc = 70°C IF = 180A IF = 360A IF = 180A Typ Unit V µA A 2.5 V ns June, 2008 IRM Test Conditions µC 2–6 APTM120U100DAG Rev 2 Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage APTM120U10DAG Thermal and package characteristics Symbol Characteristic Min Transistor Series diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.038 0.22 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM120U100DAG Rev 2 June, 2008 SP6 Package outline (dimensions in mm) APTM120U10DAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 0.035 0.9 0.03 0.7 0.025 0.02 0.5 0.015 0.3 0.01 Single Pulse 0.1 0.05 0.005 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 320 VGS=15, 10V 240 200 6V 160 5.5V 120 80 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 280 7V ID, Drain Current (A) 5V 40 240 200 160 TJ=-55°C 120 80 TJ=25°C 40 4.5V 0 0 5 10 15 20 25 TJ=125°C 0 30 0 1.2 VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 120 Normalized to VGS=10V @ 58A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) 0.9 0.8 100 80 60 40 20 0 0 40 80 120 160 200 240 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com June, 2008 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 4–6 APTM120U100DAG Rev 2 ID, Drain Current (A) 280 APTM120U10DAG RDS(on), Drain to Source ON resistance (Normalized) 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=58A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by RDSon 100 1ms 10 0.6 10ms Single pulse TJ=150°C TC=25°C 1 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=116A TJ=25°C 12 10 VDS=240V VDS=600V 8 VDS=960V 6 4 2 0 0 300 600 900 1200 1500 Gate Charge (nC) June, 2008 0 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM120U100DAG Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM120U10DAG Delay Times vs Current Rise and Fall times vs Current 100 td(off) 250 200 VDS=800V RG=1.2Ω TJ=125°C L=100µH 150 100 50 VDS=800V RG=1.2Ω TJ=125°C L=100µH 80 tr and tf (ns) td(on) and td(off) (ns) 300 60 tr 40 20 td(on) 0 0 30 60 90 120 150 180 30 ID, Drain Current (A) 90 120 150 ID, Drain Current (A) 180 24 VDS=800V RG=1.2Ω TJ=125°C L=100µH 12 Switching Energy (mJ) Switching Energy (mJ) 60 Switching Energy vs Gate Resistance Switching Energy vs Current 16 Eon Eoff 8 4 0 VDS=800V ID=116A TJ=125°C L=100µH 20 16 Eoff 12 Eon 8 Eoff 4 30 60 90 120 150 180 0 ID, Drain Current (A) 2 4 6 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 150 ZCS 125 Hard switching 100 IDR, Reverse Drain Current (A) 175 Frequency (kHz) tf VDS=800V D=50% RG=1.2Ω TJ=125°C TC=75°C 75 50 25 0 50 70 90 ID, Drain Current (A) 110 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120U100DAG Rev 2 June, 2008 30 100