APTM100UM65DAG VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Single switch with Series diode MOSFET Power Module Application • Zero Current Switching resonant mode Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance S D SK G Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 145 110 580 ±30 78 3250 30 50 3200 Unit V A V mΩ W A June, 2008 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100UM65DAG – Rev 2 Symbol VDSS APTM100UM65DAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Min VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 72.5A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V Typ 65 3 Max 400 2 78 5 ±400 Unit µA mA mΩ V nA Max Unit Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 28.5 5.08 0.9 nF 1068 VGS = 10V VBus = 500V ID = 145A nC 136 692 VGS = 15V VBus = 500V ID = 145A RG = 0.75Ω 18 14 140 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 145A, RG = 0.75Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 145A, RG = 0.75Ω 4.8 ns 55 mJ 2.9 8 mJ 3.9 Series diode ratings and characteristics IRM Min Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ Max 1000 VR=1000V IF = 240A IF = 480A IF = 240A IF = 240A VR = 667V di/dt = 800A/µs www.microsemi.com V Tj = 25°C Tj = 125°C Tc = 80°C Unit 750 1000 Tj = 125°C 240 2 2.2 1.7 Tj = 25°C 280 Tj = 125°C Tj = 25°C 350 3.04 Tj = 125°C 14.4 µA A 2.5 V ns June, 2008 VRRM Test Conditions Maximum Peak Repetitive Reverse Voltage µC 2–6 APTM100UM65DAG – Rev 2 Symbol Characteristic APTM100UM65DAG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature To Heatsink Mounting torque For teminals Package Weight Transistor Series diode Typ Max 0.038 0.23 2500 M6 M5 -40 -40 -40 3 2 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM100UM65DAG – Rev 2 June, 2008 SP6 Package outline (dimensions in mm) APTM100UM65DAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 0.035 0.9 0.03 0.7 0.025 0.02 0.5 0.015 0.3 0.01 Single Pulse 0.1 0.05 0.005 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 480 360 VGS=15, 10V 7V 280 ID, Drain Current (A) 6.5V 240 200 160 6V 120 80 5.5V 40 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 320 240 TJ=25°C 160 80 TJ=125°C 5V 0 0 5 10 15 20 25 30 0 VDS, Drain to Source Voltage (V) Normalized to VGS=10V @ 72.5A 1.3 1.2 1.1 VGS=10V 1 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 160 RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) VGS=20V 0.9 0.8 120 80 40 0 0 80 160 240 320 ID, Drain Current (A) 25 50 75 100 125 150 June, 2008 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 TC, Case Temperature (°C) www.microsemi.com 4–6 APTM100UM65DAG – Rev 2 ID, Drain Current (A) 320 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=72.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 limited by RDSon 100 1ms 10 10ms Single pulse TJ=150°C TC=25°C 1 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=145A TJ=25°C 12 10 VDS=200V VDS=500V VDS=800V 8 6 4 2 0 0 300 600 900 1200 1500 Gate Charge (nC) June, 2008 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM100UM65DAG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100UM65DAG APTM100UM65DAG Delay Times vs Current Rise and Fall times vs Current 100 160 VDS=670V RG=0.75Ω TJ=125°C L=100µH 80 120 tr and tf (ns) td(on) and td(off) (ns) td(off) VDS=670V RG=0.75Ω TJ=125°C L=100µH 80 40 td(on) 60 40 tr 20 0 0 50 94 138 182 226 270 50 94 ID, Drain Current (A) 10 Eon Switching Energy (mJ) Switching Energy (mJ) VDS=670V RG=0.75Ω TJ=125°C L=100µH 12 Eoff 8 6 4 2 0 18 Eoff 14 Eon 10 6 94 138 182 226 270 Eoff 0 ID, Drain Current (A) 1 2 3 4 5 6 7 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current 300 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 250 Frequency (kHz) VDS=670V ID=145A TJ=125°C L=100µH 22 2 50 ZCS 200 50 270 26 14 100 138 182 226 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 16 150 tf VDS=670V D=50% RG=0.75Ω TJ=125°C TC=75°C Hard switching 0 15 35 55 75 95 115 135 ID, Drain Current (A) 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100UM65DAG – Rev 2 June, 2008 VSD, Source to Drain Voltage (V)