MICROSEMI APTM100UM65DAG

APTM100UM65DAG
VDSS = 1000V
RDSon = 65mΩ typ @ Tj = 25°C
ID = 145A @ Tc = 25°C
Single switch
with Series diode
MOSFET Power Module
Application
• Zero Current Switching resonant mode
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
S
D
SK
G
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
145
110
580
±30
78
3250
30
50
3200
Unit
V
A
V
mΩ
W
A
June, 2008
ID
Parameter
Drain - Source Breakdown Voltage
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–6
APTM100UM65DAG – Rev 2
Symbol
VDSS
APTM100UM65DAG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Min
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 72.5A
VGS = VDS, ID = 20mA
VGS = ±30 V, VDS = 0V
Typ
65
3
Max
400
2
78
5
±400
Unit
µA
mA
mΩ
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
28.5
5.08
0.9
nF
1068
VGS = 10V
VBus = 500V
ID = 145A
nC
136
692
VGS = 15V
VBus = 500V
ID = 145A
RG = 0.75Ω
18
14
140
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75Ω
4.8
ns
55
mJ
2.9
8
mJ
3.9
Series diode ratings and characteristics
IRM
Min
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ
Max
1000
VR=1000V
IF = 240A
IF = 480A
IF = 240A
IF = 240A
VR = 667V
di/dt = 800A/µs
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V
Tj = 25°C
Tj = 125°C
Tc = 80°C
Unit
750
1000
Tj = 125°C
240
2
2.2
1.7
Tj = 25°C
280
Tj = 125°C
Tj = 25°C
350
3.04
Tj = 125°C
14.4
µA
A
2.5
V
ns
June, 2008
VRRM
Test Conditions
Maximum Peak Repetitive Reverse Voltage
µC
2–6
APTM100UM65DAG – Rev 2
Symbol Characteristic
APTM100UM65DAG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To Heatsink
Mounting torque
For teminals
Package Weight
Transistor
Series diode
Typ
Max
0.038
0.23
2500
M6
M5
-40
-40
-40
3
2
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTM100UM65DAG – Rev 2
June, 2008
SP6 Package outline (dimensions in mm)
APTM100UM65DAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.04
0.035
0.9
0.03
0.7
0.025
0.02
0.5
0.015
0.3
0.01
Single Pulse
0.1
0.05
0.005
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
480
360
VGS=15, 10V
7V
280
ID, Drain Current (A)
6.5V
240
200
160
6V
120
80
5.5V
40
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
400
320
240
TJ=25°C
160
80
TJ=125°C
5V
0
0
5
10
15
20
25
30
0
VDS, Drain to Source Voltage (V)
Normalized to
VGS=10V @ 72.5A
1.3
1.2
1.1
VGS=10V
1
2
3
4
5
6
7
8
DC Drain Current vs Case Temperature
160
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
VGS=20V
0.9
0.8
120
80
40
0
0
80
160
240
320
ID, Drain Current (A)
25
50
75
100
125
150
June, 2008
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
TC, Case Temperature (°C)
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4–6
APTM100UM65DAG – Rev 2
ID, Drain Current (A)
320
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=72.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
100µs
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
limited by RDSon
100
1ms
10
10ms
Single pulse
TJ=150°C
TC=25°C
1
0.6
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
Crss
1000
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
ID=145A
TJ=25°C
12
10
VDS=200V
VDS=500V
VDS=800V
8
6
4
2
0
0
300
600
900
1200
1500
Gate Charge (nC)
June, 2008
0
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
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5–6
APTM100UM65DAG – Rev 2
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100UM65DAG
APTM100UM65DAG
Delay Times vs Current
Rise and Fall times vs Current
100
160
VDS=670V
RG=0.75Ω
TJ=125°C
L=100µH
80
120
tr and tf (ns)
td(on) and td(off) (ns)
td(off)
VDS=670V
RG=0.75Ω
TJ=125°C
L=100µH
80
40
td(on)
60
40
tr
20
0
0
50
94
138
182
226
270
50
94
ID, Drain Current (A)
10
Eon
Switching Energy (mJ)
Switching Energy (mJ)
VDS=670V
RG=0.75Ω
TJ=125°C
L=100µH
12
Eoff
8
6
4
2
0
18
Eoff
14
Eon
10
6
94
138
182
226
270
Eoff
0
ID, Drain Current (A)
1
2
3
4
5
6
7
8
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
300
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
1000
250
Frequency (kHz)
VDS=670V
ID=145A
TJ=125°C
L=100µH
22
2
50
ZCS
200
50
270
26
14
100
138
182
226
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
16
150
tf
VDS=670V
D=50%
RG=0.75Ω
TJ=125°C
TC=75°C
Hard
switching
0
15
35
55
75
95
115
135
ID, Drain Current (A)
100
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTM100UM65DAG – Rev 2
June, 2008
VSD, Source to Drain Voltage (V)