APTM20SKM05G Buck chopper MOSFET Power Module VDSS = 200V RDSon = 5mΩ typ @ Tj = 25°C ID = 317A @ Tc = 25°C Application VBUS Q1 • • AC and DC motor control Switched Mode Power Supplies G1 OUT Features S1 • CR2 0/VBUS • • • G1 VBUS 0/VBUS Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration OUT S1 Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 317 237 1268 ±30 6 1136 89 50 2500 Unit V A V mΩ W A July, 2006 Absolute maximum ratings mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20SKM05G – Rev 3 • • • • • APTM20SKM05G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min VGS = 0V,VDS = 200V T j = 25°C VGS = 0V,VDS = 160V Tj = 125°C VGS = 10V, ID = 158.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IRM IF VF Maximum Reverse Leakage Current VGS = 10V VBus = 100V ID = 300A trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ 27.4 8.72 0.38 448 mΩ V nA nF nC Test Conditions 99 µJ 2124 Typ Max 350 1000 Tj = 125°C 240 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 240 Tj = 125°C 1000 www.microsemi.com µJ 1820 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns 81 2432 di/dt = 800A/µs Unit 56 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, R G = 1.2Ω IF = 240A VR = 133V Max µA 28 1852 IF = 240A IF = 480A IF = 240A Unit 188 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, R G = 1.2Ω VR=200V Max 400 2000 6 5 ±200 172 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A R G = 1.2Ω DCForward Current Diode Forward Voltage 5 3 Min Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ Unit V µA A 1.15 V July, 2006 IDSS Characteristic ns nC 2–6 APTM20SKM05G – Rev 3 Symbol APTM20SKM05G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Package Weight Typ Max 0.11 0.23 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Powe r Modules on www.microsemi.com www.microsemi.com 3–6 APTM20SKM05G – Rev 3 July, 2006 SP6 Package outline (dimensions in mm) APTM20SKM05G Typical Performance Curve Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 0.9 0.1 0.7 0.08 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 9V 800 ID, Drain Current (A) 7.5V 600 7V 400 6.5V 6V 200 600 400 T J=25°C 200 TJ =125°C 5.5V 0 0 0 5 10 15 20 25 2 VDS, Drain to Source Voltage (V) 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS (on) vs Drain Current 320 1.2 Normalized to V GS=10V @ 158.5A 1.15 1.1 VGS=10V 1.05 1 VGS=20V 0.95 I D, DC Drain Current (A) 280 240 200 160 120 80 40 0.9 0 0 100 200 300 I D, Drain Current (A) 400 25 www.microsemi.com 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 RDS(on) Drain to Source ON Resistance TJ =-55°C 4–6 APTM20SKM05G – Rev 3 I D, Drain Current (A) VGS=15&10V Transfert Characteristics 800 1000 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature VGS=10V ID= 158.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) ID, Drain Current (A) 1.1 1.0 0.9 0.8 1000 0.7 limited by RDSon 100µs 100 1ms 10ms Single pulse TJ=150°C TC=25°C 10 0.6 DC line 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss Coss 10000 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V I D=300A 10 TJ=25°C VDS=100V 8 V DS =160V 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) July, 2006 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Maximum Safe Operating Area 10000 1.2 VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature 2.5 www.microsemi.com 5–6 APTM20SKM05G – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM20SKM05G APTM20SKM05G Rise and Fall times vs Current 90 160 80 140 td(off) 70 VDS=133V RG=1.2Ω TJ=125°C L=100µH 60 50 40 30 100 80 tr 60 20 10 0 50 150 250 350 450 550 50 150 I D, Drain Current (A) 3 Eon Switching Energy (mJ) Eon and Eoff (mJ) 4 350 450 550 Switching Energy vs Gate Resistance 6 Switching Energy vs Current VDS=133V RG=1.2Ω T J=125°C L=100µH 250 ID, Drain Current (A) 5 Eoff 2 1 V DS=133V ID=300A T J=125°C L=100µH 5.5 5 4.5 Eoff Eon 4 3.5 3 2.5 0 Eoff 2 50 150 250 350 450 0 550 ID, Drain Current (A) 250 200 ZVS 150 V DS=133V D=50% R G=1.2Ω T J=125°C T C=75°C 100 50 0 70 Hard Switching 5 7.5 10 12.5 15 Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 10 TJ =25°C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) 110 150 190 230 270 I D, Drain Current (A) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM20SKM05G – Rev 3 July, 2006 30 ZCS I DR, Reverse Drain Current (A) 300 2.5 Gate Resistance (Ohms) Operating Frequency vs Drain Current 350 Frequency (kHz) tf 40 td(on) 20 V DS=133V RG=1.2Ω T J=125°C L=100µH 120 t r and tf (ns) td(on) and td(off) (ns) Delay Times vs Current