APTM10DAM05TG Boost chopper MOSFET Power Module NTC2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction VBUS SENSE CR1 Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration OUT Q2 G2 S2 G2 S2 VBUS VBUS SENSE 0/VBUS NTC1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant OUT OUT S2 NTC2 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 278 207 1100 ±30 5 780 100 50 3000 Unit V A V mΩ W A July, 2006 0/VBU S mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM10DAM05TG– Rev 1 VBUS VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C APTM10DAM05TG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C VGS = 10V, ID = 125A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Min IRM IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Unit Max Unit nF nC 165 Test Conditions ns 280 135 Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 250A, R G =2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 250A, R G = 2.5Ω 1.1 mJ 1.2 1.22 mJ 1.28 Min Typ Max 200 IF = 200A VR = 133V di/dt =400A/µs 350 600 Tj = 125°C Tj = 25°C 200 1 1.4 0.9 60 Tj = 125°C Tj = 25°C 110 400 Tj = 125°C 1680 www.microsemi.com Unit V Tj = 25°C Tj = 125°C Tc = 80°C IF = 200A IF = 400A IF = 200A mΩ V nA 80 Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 250A R G = 2.5 Ω VR=200V µA 360 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ 20 8 2.9 700 Max 200 1000 5 4 ±200 120 Chopper diode ratings and characteristics VRRM 4.5 2 VGS = 10V VBus = 50V ID = 250A Symbol Characteristic Typ µA A V July, 2006 Symbol ns nC 2-6 APTM10DAM05TG– Rev 1 Electrical Characteristics APTM10DAM05TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To Heatsink M5 2500 -40 -40 -40 2.5 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min R 25 Max 0.16 0.29 Typ 50 3952 Max Unit °C/W V °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM10DAM05TG– Rev 1 July, 2006 SP4 Package outline (dimensions in mm) APTM10DAM05TG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 Single Pulse 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics 240 VGS =15V, 10V & 9V 1000 ID, Drain Current (A) 800 600 8V 400 7V 6V 200 0 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 160 120 80 T J=25°C 40 T J=125°C 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 125A 1.1 V GS=10V 1 VGS=20V 0.9 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 300 RDS(on) vs Drain Current ID, DC Drain Current (A) 250 200 150 100 50 0.8 0 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance T J=-55°C 0 4-6 APTM10DAM05TG– Rev 1 ID, Drain Current (A) Low Voltage Output Characteristics 1200 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VGS=10V ID= 125A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 0.6 1000 100µs limited by RDSon 100 1ms Single pulse TJ=150°C TC=25°C 10ms 10 -50 -25 0 25 50 75 100 125 150 1 TC, Case Temperature (°C) VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 0 10 100 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=250A TJ=25°C 14 V DS =20V 12 VDS=50V 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) V DS =80V 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC) July, 2006 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 www.microsemi.com 5-6 APTM10DAM05TG– Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM10DAM05TG APTM10DAM05TG Delay Times vs Current Rise and Fall times vs Current 250 350 250 t d(off) VDS=66V RG=2.5Ω T J=125°C L=100µH 200 150 td(on) 100 150 tf 100 0 0 0 100 200 300 ID, Drain Current (A) 400 0 100 200 300 ID, Drain Current (A) 400 Switching Energy vs Gate Resistance Switching Energy vs Current 5 VDS=66V RG=2.5Ω TJ=125°C L=100µH 2.5 2 Switching Energy (mJ) 3 Eoff 1.5 Eon 1 0.5 Eoff 0 VDS=66V ID=200A TJ=125°C L=100µH 4 3 Eoff Eon 2 1 0 0 100 200 300 400 0 5 I D, Drain Current (A) Operating Frequency vs Drain Current ZCS Hard switching 60 ZVS VDS=66V D=50% RG=2.5Ω T J=125°C T C=75°C 40 20 0 50 100 150 15 20 25 30 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 80 10 Gate Resistance (Ohms) 100 Frequency (kHz) tr 50 50 Eon and Eoff (mJ) V DS =66V RG =2.5Ω T J=125°C L=100µH 200 tr and t f (ns) t d(on) and td(off) (ns) 300 200 1000 TJ=150°C 100 TJ=25°C 10 1 250 I D, Drain Current (A) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM10DAM05TG– Rev 1 July, 2006 VSD, Source to Drain Voltage (V)