AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS (V) = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V) The AO4600 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO4600L is a Green Product ordering option. AO4600 and AO4600L are electrically identical. D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 SOIC-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel V Drain-Source Voltage 30 DS VGS Gate-Source Voltage ±12 Continuous Drain Current A Pulsed Drain Current TA=70°C TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range -5 5.8 -4.2 40 -30 2 2 1.44 1.44 -55 to 150 -55 to 150 ID IDM PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA C Steady-State Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. ±12 6.9 TA=25°C B Max p-channel -30 Symbol RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units V V A W °C Units °C/W °C/W °C/W AO4600 n-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 30 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, VDS=5V 25 nA 1.4 V 22.6 27 33 40 VGS=4.5V, ID=6.0A 27 32 mΩ VGS=2.5V, ID=5A 42 50 mΩ gFS Forward Transconductance VSD Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA 100 TJ=125°C IS Units 1 VGS=10V, ID=6.9A Static Drain-Source On-Resistance Max V VDS=24V, V GS=0V VGS(th) RDS(ON) Typ 12 A 16 0.71 858 VGS=0V, VDS=15V, f=1MHz mΩ S 1 V 3 A 1050 pF 110 pF 80 pF VGS=0V, VDS=0V, f=1MHz 1.24 4 Ω 9.6 12 nC VGS=4.5V, VDS=15V, ID=6.9A 1.65 nC nC Qgd Gate Drain Charge 3 tD(on) Turn-On DelayTime 5.7 ns tr Turn-On Rise Time 13 ns tD(off) Turn-Off DelayTime 37 ns tf Turn-Off Fall Time 4.2 ns trr Body Diode Reverse Recovery time IF=5A, dI/dt=100A/µs 15.5 Qrr Body Diode Reverse Recovery charge IF=5A, dI/dt=100A/µs 7.9 VGS=10V, V DS=15V, R L=2.2Ω, RGEN=6Ω 20 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4600 TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 3V 25 20 2.5V 12 ID(A) ID (A) VDS=5V 16 4.5V 15 10 8 VGS=2V 125°C 4 5 25°C 0 0 0 1 2 3 4 0 5 0.5 2 2.5 3 1.7 Normalized On-Resistance 60 VGS=2.5V 50 RDS(ON) (mΩ) 1.5 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 40 30 VGS=4.5V 20 VGS=10V 1.6 ID=5A 1.5 VGS=10V VGS=4.5V 1.4 1.3 VGS=2.5V 1.2 1.1 1 0.9 0.8 10 0 5 10 15 0 20 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 70 60 1.0E+00 ID=5A 125°C 40 125°C 1.0E-01 50 IS Amps RDS(ON) (mΩ) 1 1.0E-02 1.0E-03 1.0E-04 30 1.0E-06 0.00 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 25°C 1.0E-05 25°C 20 0.25 0.50 0.75 1.00 1.25 VSD (Volts) Figure 6: Body diode characteristics 1.50 AO4600 TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 5 VDS=15V ID=6.9A Capacitance (pF) VGS (Volts) 4 f=1MHz VGS=0V 1250 3 2 Ciss 1000 1 750 500 Coss 250 0 0 2 4 6 8 10 0 12 0 Qg (nC) Figure 7: Gate-Charge characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 TJ(Max)=150°C TA=25°C RDS(ON) limited Power W 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 30 100µs 1ms 10.0 ID (Amps) Crss 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4600 p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±12V VDS=VGS ID=-250µA ID(ON) On state drain current VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5A RDS(ON) gFS VSD IS Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time µA ±100 nA -1 -1.4 V 42.5 49 74 mΩ 54 64 mΩ 80 11 -0.75 120 mΩ -1 S V -3 A A TJ=125°C 7 Units V -25 VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr -0.7 Max -1 -5 TJ=55°C Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Typ 952 103 77 1200 VGS=0V, VDS=-15V, f=1MHz pF pF pF VGS=0V, VDS=0V, f=1MHz 5.9 30 Ω 9.5 2 3.1 12 VGS=-4.5V, VDS=-15V, ID=-5A nC nC nC VGS=-10V, VDS=-15V, RL=3Ω, RGEN=6Ω IF=-5A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 12 4 37 12 21 13 ns ns ns ns 26 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. value in any arating, given pulse application the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance B: Repetitive width depends limited byon junction temperature. rating. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. B: Repetitive rating, pulse width limited by junction temperature. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. curve provides a single pulse rating. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Rev 4 : Sept 2005 SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4600 TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS 10 25 VDS=-5V -10V -4.5V 20 8 6 15 -ID(A) -ID (A) -3V -2.5V 10 VGS=-2V 5 125°C 4 25°C 2 0 0 0 1 2 3 4 5 0 0.5 120 1.5 Normalized On-Resistance 1.6 100 RDS(ON) (mΩ) 1 VGS=-2.5V 80 VGS=-4.5V 60 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 40 VGS=-10V ID=-5A VGS=-4.5V VGS=-10V 1.4 1.2 VGS=-2.5V ID=-2A 1 20 0 2 4 6 8 0.8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 190 170 1.0E+00 150 ID=-2A 130 1.0E-01 110 -IS (A) RDS(ON) (mΩ) 25 90 125°C 70 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 30 1.0E-05 10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4600 TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-15V ID=-5A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 Ciss 800 600 400 Coss 1 Crss 200 0 0 0 2 4 6 8 10 12 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 TJ(Max)=150°C TA=25°C 20 25 30 40 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 30 100µs 1ms 0.1s 10ms 1s 1.0 15 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 10 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) Z θJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha and Omega Semiconductor, Ltd. 100 1000