AO4614A Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614A is Pb-free (meets ROHS & Sony 259 specifications). n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31mΩ (VGS=10V) < 45mΩ (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 SOIC-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 VGS Gate-Source Voltage Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation ±20 ±20 6 -5 ID 5 -4 IDM 20 -20 2 2 1.28 1.28 -55 to 150 -55 to 150 TA=25°C Continuous Drain Current A TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Max p-channel -40 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 48 74 35 p-ch p-ch p-ch 48 74 35 Units V V A W °C Max Units 62.5 °C/W 110 °C/W 50 °C/W 62.5 110 50 °C/W °C/W °C/W www.aosmd.com AO4614A N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, V GS=0V 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 VGS=10V, I D=6A TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, I D=5A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=6A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Units V VDS=32V, VGS=0V VGS(th) IS Max 40 IGSS RDS(ON) Typ VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, I D=6A µA ±100 nA 2.3 3 V 23.2 31 36 48 32.6 45 A 22 mΩ mΩ S 0.77 1 V 2.5 A 404 pF 95 pF 37 pF 2.7 Ω 8.3 nC 4.2 nC 1.3 nC Qgs Gate Source Charge Qgd Gate Drain Charge 2.3 nC tD(on) Turn-On DelayTime 4.2 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω 3.3 ns 15.6 ns 3 ns 20.5 14.5 ns nC trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 1: Sept 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614A P-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-10mA, V GS=0V -40 -1 -5 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -20 ±100 nA -3 V 32.5 45 52 65 VGS=-4.5V, I D=-2A 51.4 63 VDS=-5V, ID=-4.8A 12 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) µA -1.9 VGS=-10V, I D=-5A Coss Units V TJ=55°C IGSS IS Max VDS=-32V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-20V, I D=-5A A mΩ mΩ S -0.75 -1 V -2.5 A 657 pF 143 pF 63 pF 6.5 Ω 13.6 nC 6.8 nC 1.8 nC Qgs Gate Source Charge Qgd Gate Drain Charge 3.9 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=-10V, VDS=-20V, RL=4Ω, RGEN=3Ω 6.7 ns 26 ns 11.2 ns Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 22.3 Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 15.2 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The The valueapplication in any given application depends on the user's design. The is current is t≤ based on the resistance rating. T value in any a given depends on the user's specific board specific design. board The current rating basedrating on the 10s thermal A =25°C. rating, pulse width limited by junction temperature. tB: ≤Repetitive 10s thermal resistance rating. the sum of the thermal junction to lead RθJL and lead to ambient. C. Repetitive The R θJA israting, B: pulse width limitedimpedence by junctionfrom temperature. the sum of theinthermal from lead R leadduty to ambient. C. D. The R static characteristics Figuresimpedence 1 to 6,12,14 arejunction obtainedtousing 80 µsand pulses, cycle 0.5% max. θJA is θJL D. The static characteristics Figures 1 to 6,12,14 are on obtained using <300with µs pulses, duty cycle max. E. These tests are performedinwith the device mounted 1 in2 FR-4 board 2oz. Copper, in a0.5% still air environment with TA=25°C. The SOA E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with curve provides a single pulse rating. T A=25°C. The SOA curve provides a single pulse rating. Rev 0 : Jan 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10V 20 5V VDS=5V 25 4.5V 15 4V ID(A) ID (A) 20 15 125°C 10 10 VGS=3.5V 5 5 0 0 1 2 3 4 25°C 0 5 2 2.5 VDS (Volts) Figure 1: On-Region Characteristics 4 4.5 1.8 Normalized On-Resistance RDS(ON) (mΩ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics 50 40 VGS=4.5V 30 VGS=10V 20 0 5 10 15 VGS=10V ID=6A 1.6 VGS=4.5V ID=5A 1.4 1.2 1 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 80 ID=6A 70 1.0E+00 60 125°C 1.0E-01 50 IS (A) RDS(ON) (mΩ) 3 125°C 40 1.0E-02 25°C 1.0E-03 30 1.0E-04 25°C 20 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4614A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 800 VDS=20V ID= 6A Capacitance (pF) VGS (Volts) 8 6 4 2 600 Ciss 400 Coss Crss 200 0 0 0 2 4 6 8 0 10 100.0 100µs 10ms 1ms 1s 1.0 10s TJ(Max)=150°C TA=25°C 30 Power (W) ID (Amps) 40 TJ(Max)=150°C TA=25°C 10µs 10.0 0.1s 20 10 DC 0 0.001 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) ZθJA Normalized Transient Thermal Resistance 30 40 RDS(ON) limited 10 20 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 25 30 -5V -10V 25 VDS=-5V -4.5V -6V 20 -4V 15 -ID(A) -ID (A) 20 15 -3.5V 10 10 VGS=-3V 5 1 2 3 25°C 5 0 0 125°C 4 0 5 1 1.5 -VDS (Volts) Figure 1: On-Region Characteristics 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 60 1.8 Normalized On-Resistance VGS=-4.5V 55 RDS(ON) (mΩ) 2 50 45 40 VGS=-10V 35 VGS=-10V ID=-5A 1.6 1.4 VGS=-4.5V ID=-2A 1.2 1 0.8 30 0 0 2 4 6 8 25 10 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 160 140 1.0E+00 ID=-5A 120 125°C 1.0E-01 125°C 100 -IS (A) RDS(ON) (mΩ) 50 80 60 1.0E-02 1.0E-03 1.0E-04 40 25°C 25°C 1.0E-05 20 2 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4614A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 1000 VDS=-20V ID=-5A 800 Capacitance (pF) -VGS (Volts) 8 6 4 2 600 400 0 5 10 Crss 0 15 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 100µs 1ms 0.1s TJ(Max)=150°C TA=25°C 10µs 30 Power (W) RDS(ON) limited 10ms 1s 20 10 10s DC 0.1 0.1 20 40 TJ(Max)=150°C, TA=25°C 1.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) Coss 200 0 10.0 Ciss 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 www.aosmd.com