Datasheet

AO4614B
40V Dual P + N-Channel MOSFET
General Description
Product Summary
The AO4614B uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used
in H-bridge, Inverters and other applications.
N-Channel
VDS (V) = 40V,
ID = 6A (VGS=10V)
RDS(ON)
< 30mΩ (VGS=10V)
< 38mΩ (VGS=4.5V)
P-Channel
-40V
-5A (VGS=-10V)
100% UIS Tested
100% Rg Tested
100% UIS Tested
100% Rg Tested
< 45mΩ (VGS= -10V)
< 63mΩ (VGS= -4.5V)
SOIC-8
Top View
D2
D1
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
D2
D2
D1
D1
8
7
6
5
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Max n-channel
40
VGS
TA=25°C
Continuous Drain
Current A
TA=70°C
Pulsed Drain Current B
S1
n-channel
Pin1
Gate-Source Voltage
G1
p-channel
Max p-channel
-40
±20
±20
6
-5
ID
5
-4
IDM
30
-30
Units
V
V
A
B
IAR
14
-20
Repetitive avalanche energy L=0.1mH B
EAR
9.8
20
2
2
1.28
1.28
-55 to 150
-55 to 150
Avalanche Current
Power Dissipation
TA=25°C
TA=70°C
Junction and Storage Temperature Range
PD
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
Symbol
RθJA
RθJL
RθJA
RθJL
mJ
W
°C
Device
n-ch
n-ch
n-ch
Typ
48
74
35
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
p-ch
p-ch
p-ch
48
74
35
62.5
110
50
°C/W
°C/W
°C/W
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AO4614B
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
±100
VGS=10V, ID=6A
TJ=125°C
VGS=4.5V, ID=5A
2.5
3
24
30
36
45
30
38
Forward Transconductance
VDS=5V, ID=6A
19
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.76
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
410
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=20V,
ID=6A
VGS=10V, VDS=20V, RL=3.3Ω,
RGEN=3Ω
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
nA
V
516
mΩ
S
1
V
2
A
650
pF
82
pF
43
pF
4.6
Ω
8.9
10.8
nC
4.3
5.6
nC
2.4
nC
1.4
nC
6.4
ns
3.6
ns
16.2
ns
6.6
IF=6A, dI/dt=100A/µs
µA
A
gFS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
40
VDS=40V, VGS=0V
VGS(th)
RDS(ON)
Typ
18
ns
24
10
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
9
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
12
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2 : Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
40
30
10V
35
VDS=5V
5V
25
30
4.5V
20
4V
ID(A)
ID (A)
25
20
15
15
10
10
125°C
VGS=3.5V
25°C
5
5
0
0
0
1
2
3
4
5
2
2.5
VDS (Volts)
Fig 1: On-Region Characteristics
4
4.5
1.8
34
Normalized On-Resistance
VGS=4.5V
32
RDS(ON) (mΩ )
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
36
30
28
26
VGS=10V
24
22
20
1.6
VGS=10V
ID=6A
1.4
1.2
VGS=4.5V
ID=5A
1
0.8
0.6
0
5
10
15
20
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
ID=6A
70
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
80
9
12
10
60
1
50
IS (A)
RDS(ON) (mΩ )
3
125°C
0.1
40
125°C
25°C
30
25°C
0.01
0.001
20
0.0001
10
3
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
800
10
VDS=20V
ID= 6A
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
600
400
Crss
200
Coss
0
0
0
2
4
6
8
0
10
10
20
30
40
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
100
TJ(Max)=150°C
TA=25°C
10µs
100µs
1
RDS(ON)
limited
1ms
10ms
0.1s
1s
10s
0.1
TJ(Max)=150°C
TA=25°C
DC
Power (W)
ID (Amps)
10
1
10
10
1
0.00001
0.01
0.1
100
100
0.001
0.1
10
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
9
12
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=74°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AO4614B
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID= -250µA, VGS=0V
-40
-1
TJ=55°C
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID= -250µA
-1.7
ID(ON)
On state drain current
VGS= -10V, VDS= -5V
-30
±100
VGS= -10V, ID= -5A
Static Drain-Source On-Resistance
TJ=125°C
VGS= -4.5V, ID= -4A
gFS
Forward Transconductance
VDS= -5V, ID= -5A
VSD
Diode Forward Voltage
IS= -1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
-2
-3
36
45
52
65
50
63
13
940
µA
nA
V
mΩ
S
-1
V
-2
A
1175
pF
97
pF
72
pF
VGS=0V, VDS=0V, f=1MHz
14
Ω
17
22
nC
VGS= -10V, VDS= -20V,
ID= -5A
7.9
10
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF= -5A, dI/dt=100A/µs
21
Qrr
Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/µs
14
Body Diode Reverse Recovery Time
Units
A
-0.76
750
VGS=0V, VDS= -20V, f=1MHz
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
Max
V
VDS= -40V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS= -10V, VDS= -20V, RL=4Ω,
RGEN=3Ω
3.4
nC
3.2
nC
6.2
ns
8.4
ns
44.8
ns
41.2
ns
27
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
2
A:T The
value of R θJA isinmeasured
the device
mounted
FR-4
board board
with 2oz.
Copper,
a still rating
air environment
with
any givenwith
application
depends
onon
the1in
user's
specific
design.
The in
current
is based on
theT A =25°C.
A =25°C. The value
The
value
in
any
a
given
application
depends
on
the
user's
specific
board design. The current rating is based on the t ≤ 10s thermal
t ≤ 10s thermal resistance rating.
resistance
rating.
B: Repetitive
rating, pulse width limited by junction temperature.
9
B:
rating,
pulse
limitedimpedence
by junction from
temperature.
C.Repetitive
The R θJA is
the sum
of width
the thermal
junction to lead R θJL and lead to ambient.
12
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
D. The static characteristics in Figures 1 to 6,12,14 are obtained2 using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
E.
with the
devicepulse
mounted
on. 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
T AThese
=25°C.tests
The are
SOAperformed
curve provides
a single
rating
SOA
Rev1curve
: Janprovides
2010 a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
30
VDS=-5V
-10V
25
-5V
-4V
-4.5V
20
-ID(A)
20
-ID (A)
25
15
VGS=-3.5V
10
15
10
5
125°C
5
0
25°C
0
0
1
2
3
4
5
1.5
-VDS (Volts)
Fig 12: On-Region Characteristics
2.5
3
3.5
4
4.5
-VGS(Volts)
Figure 13: Transfer Characteristics
1.7
Normalized On-Resistance
65
60
VGS=-4.5V
55
RDS(ON) (mΩ )
2
50
45
40
VGS=-10V
35
VGS=-10V
ID=-5A
1.5
1.3
1.1
VGS=-4.5V
ID=-4A
0.9
0.7
30
0
5
10
15
-50
20
-ID (A)
Figure 14: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 15: On-Resistance vs. Junction
Temperature
130
100
ID=-5A
9
12
10
110
-IS (A)
RDS(ON) (mΩ )
1
90
70
125°C
50
125°C
0.1
25°C
0.01
0.001
25°C
0.0001
30
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 16: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 17: Body-Diode Characteristics
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AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1400
VDS=-20V
ID= -5A
1200
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
1000
800
600
400
2
Crss
Coss
200
0
0
0
3
6
9
12
15
0
18
10
20
30
40
-VDS (Volts)
Figure 19: Capacitance Characteristics
Qg (nC)
Figure 18: Gate-Charge Characteristics
1000
100
TJ(Max)=150°C
TA=25°C
10µs
100µs
1
RDS(ON)
limited
1ms
10ms
0.1s
1s
10s
0.1
TJ(Max)=150°C
TA=25°C
DC
100
Power (W)
-ID (Amps)
10
10
0.01
0.1
1
10
1
0.00001
100
0.1
10
1000
Pulse Width (s)
Figure 21: Single Pulse Power Rating Junctionto-Ambient (Note E)
-VDS (Volts)
Figure 20: Maximum Forward Biased Safe
Operating Area (Note E)
9
12
10
Zθ JA Normalized Transient
Thermal Resistance
0.001
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=74°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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