AO4614B 40V Dual P + N-Channel MOSFET General Description Product Summary The AO4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. N-Channel VDS (V) = 40V, ID = 6A (VGS=10V) RDS(ON) < 30mΩ (VGS=10V) < 38mΩ (VGS=4.5V) P-Channel -40V -5A (VGS=-10V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested < 45mΩ (VGS= -10V) < 63mΩ (VGS= -4.5V) SOIC-8 Top View D2 D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Max n-channel 40 VGS TA=25°C Continuous Drain Current A TA=70°C Pulsed Drain Current B S1 n-channel Pin1 Gate-Source Voltage G1 p-channel Max p-channel -40 ±20 ±20 6 -5 ID 5 -4 IDM 30 -30 Units V V A B IAR 14 -20 Repetitive avalanche energy L=0.1mH B EAR 9.8 20 2 2 1.28 1.28 -55 to 150 -55 to 150 Avalanche Current Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJL RθJA RθJL mJ W °C Device n-ch n-ch n-ch Typ 48 74 35 Max 62.5 110 50 Units °C/W °C/W °C/W p-ch p-ch p-ch 48 74 35 62.5 110 50 °C/W °C/W °C/W www.aosmd.com AO4614B N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 30 ±100 VGS=10V, ID=6A TJ=125°C VGS=4.5V, ID=5A 2.5 3 24 30 36 45 30 38 Forward Transconductance VDS=5V, ID=6A 19 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 410 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=20V, ID=6A VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs nA V 516 mΩ S 1 V 2 A 650 pF 82 pF 43 pF 4.6 Ω 8.9 10.8 nC 4.3 5.6 nC 2.4 nC 1.4 nC 6.4 ns 3.6 ns 16.2 ns 6.6 IF=6A, dI/dt=100A/µs µA A gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VDS=40V, VGS=0V VGS(th) RDS(ON) Typ 18 ns 24 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. 9 C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. 12 D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev2 : Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 40 30 10V 35 VDS=5V 5V 25 30 4.5V 20 4V ID(A) ID (A) 25 20 15 15 10 10 125°C VGS=3.5V 25°C 5 5 0 0 0 1 2 3 4 5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 4 4.5 1.8 34 Normalized On-Resistance VGS=4.5V 32 RDS(ON) (mΩ ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics 36 30 28 26 VGS=10V 24 22 20 1.6 VGS=10V ID=6A 1.4 1.2 VGS=4.5V ID=5A 1 0.8 0.6 0 5 10 15 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 ID=6A 70 -25 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 80 9 12 10 60 1 50 IS (A) RDS(ON) (mΩ ) 3 125°C 0.1 40 125°C 25°C 30 25°C 0.01 0.001 20 0.0001 10 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 800 10 VDS=20V ID= 6A Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 600 400 Crss 200 Coss 0 0 0 2 4 6 8 0 10 10 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000 100 TJ(Max)=150°C TA=25°C 10µs 100µs 1 RDS(ON) limited 1ms 10ms 0.1s 1s 10s 0.1 TJ(Max)=150°C TA=25°C DC Power (W) ID (Amps) 10 1 10 10 1 0.00001 0.01 0.1 100 100 0.001 0.1 10 1000 VDS (Volts) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 9 12 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=74°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614B P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID= -250µA, VGS=0V -40 -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID= -250µA -1.7 ID(ON) On state drain current VGS= -10V, VDS= -5V -30 ±100 VGS= -10V, ID= -5A Static Drain-Source On-Resistance TJ=125°C VGS= -4.5V, ID= -4A gFS Forward Transconductance VDS= -5V, ID= -5A VSD Diode Forward Voltage IS= -1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance -2 -3 36 45 52 65 50 63 13 940 µA nA V mΩ S -1 V -2 A 1175 pF 97 pF 72 pF VGS=0V, VDS=0V, f=1MHz 14 Ω 17 22 nC VGS= -10V, VDS= -20V, ID= -5A 7.9 10 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF= -5A, dI/dt=100A/µs 21 Qrr Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/µs 14 Body Diode Reverse Recovery Time Units A -0.76 750 VGS=0V, VDS= -20V, f=1MHz SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Max V VDS= -40V, VGS=0V VGS(th) RDS(ON) Typ VGS= -10V, VDS= -20V, RL=4Ω, RGEN=3Ω 3.4 nC 3.2 nC 6.2 ns 8.4 ns 44.8 ns 41.2 ns 27 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with 2 A:T The value of R θJA isinmeasured the device mounted FR-4 board board with 2oz. Copper, a still rating air environment with any givenwith application depends onon the1in user's specific design. The in current is based on theT A =25°C. A =25°C. The value The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal t ≤ 10s thermal resistance rating. resistance rating. B: Repetitive rating, pulse width limited by junction temperature. 9 B: rating, pulse limitedimpedence by junction from temperature. C.Repetitive The R θJA is the sum of width the thermal junction to lead R θJL and lead to ambient. 12 C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. D. The static characteristics in Figures 1 to 6,12,14 are obtained2 using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with E. with the devicepulse mounted on. 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The T AThese =25°C.tests The are SOAperformed curve provides a single rating SOA Rev1curve : Janprovides 2010 a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 30 VDS=-5V -10V 25 -5V -4V -4.5V 20 -ID(A) 20 -ID (A) 25 15 VGS=-3.5V 10 15 10 5 125°C 5 0 25°C 0 0 1 2 3 4 5 1.5 -VDS (Volts) Fig 12: On-Region Characteristics 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 13: Transfer Characteristics 1.7 Normalized On-Resistance 65 60 VGS=-4.5V 55 RDS(ON) (mΩ ) 2 50 45 40 VGS=-10V 35 VGS=-10V ID=-5A 1.5 1.3 1.1 VGS=-4.5V ID=-4A 0.9 0.7 30 0 5 10 15 -50 20 -ID (A) Figure 14: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 Temperature (°C) Figure 15: On-Resistance vs. Junction Temperature 130 100 ID=-5A 9 12 10 110 -IS (A) RDS(ON) (mΩ ) 1 90 70 125°C 50 125°C 0.1 25°C 0.01 0.001 25°C 0.0001 30 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 16: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 17: Body-Diode Characteristics www.aosmd.com AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 1400 VDS=-20V ID= -5A 1200 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 1000 800 600 400 2 Crss Coss 200 0 0 0 3 6 9 12 15 0 18 10 20 30 40 -VDS (Volts) Figure 19: Capacitance Characteristics Qg (nC) Figure 18: Gate-Charge Characteristics 1000 100 TJ(Max)=150°C TA=25°C 10µs 100µs 1 RDS(ON) limited 1ms 10ms 0.1s 1s 10s 0.1 TJ(Max)=150°C TA=25°C DC 100 Power (W) -ID (Amps) 10 10 0.01 0.1 1 10 1 0.00001 100 0.1 10 1000 Pulse Width (s) Figure 21: Single Pulse Power Rating Junctionto-Ambient (Note E) -VDS (Volts) Figure 20: Maximum Forward Biased Safe Operating Area (Note E) 9 12 10 Zθ JA Normalized Transient Thermal Resistance 0.001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=74°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 22: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com