AO4700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) The AO4700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for non-synchronous DC-DC conversion applications. Standard Product AO4700 is Pb-free (meets ROHS & Sony 259 specifications). AO4700L is a Green Product ordering option. AO4700 and AO4700L are electrically identical. A A S G 1 2 3 4 8 7 6 5 K K D D SCHOTTKY VDS (V) = 30V, IF = 4A, VF<0.5V@3A D K S A G SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C B IDM VKA Schottky reverse voltage TA=25°C Continuous Forward Current A Pulsed Forward Current TA=70°C B TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Steady-State Steady-State Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State C Steady-State TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units 30 V V 5.8 A 30 IF PD Schottky ±20 6.9 IFM TA=25°C Maximum Junction-to-Lead ID MOSFET 30 4 V 2.6 A 2 40 2 1.28 1.28 -55 to 150 -55 to 150 °C Typ Max Units 48 62.5 74 35 110 40 44 62.5 73 31 110 40 W °C/W °C/W AO4700 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, V DS=5V 20 VGS=10V, I D=6.9A TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, I D=5.0A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current VDS=5V, ID=6.9A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time Units V VDS=24V, VGS=0V VGS(th) IS Max 30 IGSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, I D=6.9A 10 µA 100 nA 1.9 3 V 22.5 28 31.3 38 34.5 42 mΩ 1 V 3 A A 15.4 mΩ S 0.76 680 pF 102 pF 77 pF 3 Ω 13.84 nC 6.74 nC 1.82 nC 3.2 nC 4.6 ns VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 4.1 ns 20.6 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 5.2 ns trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs 16.5 Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 7.8 ns nC SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=3.0A 0.45 0.5 0.07 0.15 Irm VR=24V VR=24V, TJ=125°C 4.2 20 VR=24V, TJ=150°C 15 120 60 Qrr CT Maximum reverse leakage current Junction Capacitance VR=15V V mA pF A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 3 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AO4700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 6V 5V 4.5V 20 12 ID(A) ID (A) VDS=5V 16 4V 15 3.5V 10 8 125°C 4 VGS=3V 5 25°C 0 0 0 1 2 3 4 0 5 0.5 Normalized On-Resistance 50 RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 4.5 1.6 60 VGS=4.5V 40 30 20 VGS=10V 10 0 5 10 15 VGS=10V ID=5A 1.5 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 0.8 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 70 1.0E+01 60 1.0E+00 ID=5A 50 IS Amps RDS(ON) (mΩ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 40 1.0E-01 1.0E-02 125°C 1.0E-03 30 25°C 1.0E-04 25°C 20 1.0E-05 0.0 10 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 10 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AO4700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=15V ID=6.9A 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 0 2 4 6 8 10 12 Crss 0 14 0 5 Qg (nC) Figure 7: Gate-Charge characteristics 100 Power W ID (Amps) 25 30 TJ(Max)=150°C TA=25°C 10µs 10ms 0.1s 1 20 40 30 100µs 1ms 10 15 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 10 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 AO4700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 600 1.00E+01 125°C f = 1MHz 500 Capacitance (pF) IF (Amps) 1.00E+00 1.00E-01 1.00E-02 400 300 200 100 25°C 1.00E-03 0 0.0 0.2 0.4 0.6 0.8 1.0 0 VF (Volts) Figure 12: Schottky Forward Characteristics 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.7 1.0E-01 0.6 IF=5A Leakage Current (A) VF (Volts) 5 0.5 0.4 IF=3A 0.3 0.2 1.0E-02 1.0E-03 VR=24V 1.0E-04 1.0E-05 1.0E-06 0.1 0 25 50 75 100 125 Temperature (°C) 150 0 175 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Toff 10 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000