AON4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON4703 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AON4703 is Pb-free (meets ROHS & Sony 259 specifications). AON4703L is a Green Product ordering option. AON4703 and AON4703L are electrically identical. VDS (V) = -20V ID = -3.4A (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) RDS(ON) < 160mΩ (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 1A, VF<[email protected] A A S G 1 2 3 4 8 7 6 5 D K S A K K D D G DFN3X2-8L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage V Gate-Source Voltage GS Continuous Drain CurrentA Pulsed Drain Current TA=25°C TA=70°C B IDM VKA Schottky reverse voltage Continuous Forward CurrentA Pulsed Forward Current TA=25°C TA=70°C B Power Dissipation TA=25°C TA=70°C Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky t ≤ 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-LeadC Schottky Units V V ±8 -3.4 -2.7 A -15 20 1.9 1.2 IF IFM Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ID MOSFET -20 V A PD 1.7 1.1 7 0.96 0.62 TJ, TSTG -55 to 150 -55 to 150 °C Typ 51 88 28 Max 75 110 35 Units 66 95 40 80 130 50 Symbol RθJA RθJL RθJA RθJL W °C/W °C/W AON4703 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 Gate-Body leakage current VDS=0V, VGS=±8V VDS=VGS ID=-250µA -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 ±100 nA -0.63 -1 V 73 90 110 135 VGS=-2.5V, ID=-2.5A 99 120 mΩ VGS=-1.8V, ID=-1.5A 133 160 mΩ VGS=-4.5V, ID=-3.4A TJ=125°C gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-3.4A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-3.4A VGS=-4.5V, VDS=-10V, RL=2.9Ω, RGEN=3Ω IF=-3.4A, dI/dt=100A/µs trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/µs SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=0.5A Irm Maximum reverse leakage current CT Junction Capacitance trr Qrr SchottkyReverse Recovery Time Schottky Reverse Recovery Charge µA -5 Gate Threshold Voltage IS Units -1 TJ=55°C VGS(th) Static Drain-Source On-Resistance Max V VDS=-16V, VGS=0V IGSS RDS(ON) Typ 4 A 7 -0.83 S -1 V -2 A 540 pF 72 pF 49 pF 12 Ω 6.1 nC 0.6 nC 1.6 nC 10 ns 12 ns 44 ns 22 ns 21 ns nC 7.5 0.39 VR=16V VR=16V, TJ=125°C VR=10V IF=1A, dI/dt=100A/µs IF=1A, dI/dt=100A/µs mΩ 0.5 0.1 20 V mA 34 5.2 0.8 pF 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0. June 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AON4703 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 15 -4.5V -3.0V VDS=-5V -2.5V -8V 4 10 -ID(A) -ID (A) -2.0V 2 5 125°C VGS=-1.5V 25°C 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 5 0 160 0.5 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 2 1.8 150 VGS=-1.8V Normalized On-Resistance 140 130 RDS(ON) (mΩ) 165 120 VGS=-2.5V 110 100 90 VGS=-4.5V 80 70 VGS=-2.5V ID=-2.5A 1.6 VGS=-1.8V ID=-1.5A 1.4 VGS=-4.5V ID=-3.4A 1.2 1 60 50 0.8 0 1 2 3 4 5 6 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 200 1E+00 ID=-3.4A 1E-01 -IS (A) RDS(ON) (mΩ) 150 125°C 100 25°C 125°C 1E-02 25°C 1E-03 1E-04 1E-05 50 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AON4703 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS=-10V ID=-3.4A Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 600 400 Crss 200 Coss 165 0 0 0 2 4 6 8 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 15 1ms 0.1s 10ms 1s DC 0 0.001 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) 10 10 5 0.1 0.1 20 TJ(Max)=150°C TA=25°C 100µs RDS(ON) limited 1.0 15 20 TJ(Max)=150°C TA=25°C 10.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AON4703 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 100 1.0E+01 125°C f = 1MHz 80 Capacitance (pF) IF (Amps) 1.0E+00 1.0E-01 1.0E-02 60 40 20 25°C 1.0E-03 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 0 VF (Volts) Figure 12: Schottky Forward Characteristics 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.5 1.0E-02 Leakage Current (A) 0.4 VF (Volts) 5 IF=0.5A 0.3 0.2 0.1 1.0E-03 VR=16V 1.0E-04 1.0E-05 1.0E-06 0 25 50 75 100 Temperature (°C) 125 0 150 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=80°C/W 50 75 100 125 150 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature 10 25 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000