AO4902 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Features General Description VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) The AO4902 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two identical MOSFETs are co-packaged in parallel with a Schottky diode, making them ideal for many bridge and totem pole applications, for e.g. DDR memory. Standard Product AO4902 is Pb-free (meets ROHS & Sony 259 specifications). AO4902L is a Green Product ordering option. AO4902 and AO4902L are electrically identical. SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D1 S2/A2 G2 S1/A1 G1 1 2 3 4 K1 D2/K2 D2/K2 D1/K1 D1/K1 8 7 6 5 VGS Gate-Source Voltage TA=25°C A Continuous Drain Current TA=70°C B IDM VKA Schottky reverse voltage TA=25°C Continuous Forward CurrentA TA=70°C B S2 MOSFET TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Thermal Characteristics Schottky Steady-State Steady-State t ≤ 10s A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units V ±12 6.9 V 5.8 A 40 IF PD Schottky 30 IFM TA=25°C Maximum Junction-to-Lead ID A2 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Pulsed Forward Current K2 A1 G1 SOIC-8 Pulsed Drain Current D2 30 3 V 2 A 2 40 2 1.44 1.44 -55 to 150 -55 to 150 °C Typ Max Units 48 62.5 74 35 110 40 47.5 62.5 71 32 110 40 W °C/W °C/W AO4902 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=250µA, VGS=0V 30 1 TJ=55°C 5 VDS=0V, VGS= ±12V 100 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.7 On state drain current VGS=4.5V, VDS=5V 25 VGS=10V, ID=6.9A VGS=4.5V, ID=6.0A 27 32 mΩ VGS=2.5V, ID=5A 42 50 mΩ Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V A 27 VSD Crss 1.4 40 Forward Transconductance Coss nA 33 gFS IS 1 µA 22.6 TJ=125°C Static Drain-Source On-Resistance Max Units V VDS=24V, VGS=0V ID(ON) RDS(ON) Typ 12 16 0.71 846 VGS=0V, VDS=15V, f=1MHz mΩ S 1 V 3 A 1050 pF 96 pF 67 pF VGS=0V, VDS=0V, f=1MHz 1.24 3.6 Ω 9.6 12 nC VGS=4.5V, VDS=15V, ID=6.9A 1.65 nC nC Qgd Gate Drain Charge 3 tD(on) Turn-On DelayTime 3.2 4.8 tr Turn-On Rise Time tD(off) Turn-Off DelayTime ns VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 4.5 6.8 ns 26.3 40 ns tf Turn-Off Fall Time 4.8 7 ns trr Body Diode Reverse Recovery time IF=5A, dI/dt=100A/µs 15.5 20 ns Qrr Body Diode Reverse Recovery charge IF=5A, dI/dt=100A/µs 7.9 nC SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A 0.45 0.007 0.05 Irm Maximum reverse leakage current VR=30V VR=30V, TJ=125°C CT Junction Capacitance VR=15V VR=30V, TJ=150°C 0.5 3.2 10 12 37 20 V mA pF A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISI OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4902 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 3V 25 20 12 2.5V 15 ID(A) ID (A) VDS=5V 16 4.5V 10 125°C VGS=2V 5 8 0 0 0 1 2 3 4 0 5 0.5 60 1.5 2 2.5 3 1.7 Normalized On-Resistance VGS=2.5V 50 RDS(ON) (mΩ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 40 VGS=4.5V 30 20 VGS=10V 1.6 ID=5A 1.5 VGS=10V VGS=4.5V 1.4 1.3 VGS=2.5V 1.2 1.1 1 0.9 10 0 5 10 15 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature (°C) Figure 4: On resistance vs. Junction Temperature 70 1.0E+01 60 1.0E+00 ID=5A 1.0E-01 50 40 125°C 30 25°C IS (A) RDS(ON) (mΩ) 25°C 4 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 20 1.0E-06 10 0 2 4 6 8 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4902 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 5 VDS=15V ID=6.9A Capacitance (pF) VGS (Volts) 4 f=1MHz VGS=0V 1250 3 2 1 Ciss 1000 750 500 Coss 250 0 Crss 0 0 2 4 6 8 10 12 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 TJ(Max)=150°C TA=25°C 30 100µs 1ms Power (W) 10.0 ID (A) 10ms 0.1s 1.0 30 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 10 1s 20 10 10s DC 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 T 100 1000 AO4902 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 250 10 f = 1MHz Capacitance (pF) 1 IF (Amps) 200 125°C 0.1 0.01 150 100 50 25°C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VF (Volts) Figure 12: Schottky Forward Characteristics 5 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.7 100 0.6 Leakage Current (mA) IF=3A VF (Volts) 0.5 0.4 IF=1A 0.3 0.2 10 1 VR=30V 0.1 0.01 0.001 0.1 0 25 50 75 100 125 Temperature (°C) 150 0 175 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000