AO4709 Dual P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4709 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO4709 is Pb-free (meets ROHS & Sony 259 specifications). AO4709L is a Green Product ordering option. AO4709 and AO4709L are electrically identical Features VDS (V) = -30V ID = -8A (VGS = -10V) RDS(ON) < 33mΩ (VGS = -10V) RDS(ON) < 56mΩ (VGS = -4.5V) SCHOTTKY VDS (V) = 30V,IF = 3A, VF<0.5V@1A A S S G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Pulsed Drain Current A TA=70°C B TA=25°C Pulsed Forward Current A TA=70°C B S A MOSFET TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Lead C Thermal Characteristics Schottky Steady-State Steady-State Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Steady-State Steady-State TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units V ±20 -8 V -6.6 A -40 IF PD Schottky -30 IFM TA=25°C 1/5 ID IDM VKA Schottky reverse voltage Continuous Forward Current K G SOIC-8 Continuous Drain Current D 30 4.4 V 3.2 A 3 30 3 2 2 -55 to 150 -55 to 150 °C Typ Max Units 24 40 54 21 75 30 36 40 67 25 75 30 W °C/W °C/W www.freescale.net.cn AO4709 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V 40 RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-8A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) -2 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA ±100 nA -2.4 V 33 33 41 56 mΩ -1 V -4.2 A 14.5 -0.76 mΩ S 920 pF 190 pF 122 pF 3.6 Ω 18.4 nC 9.3 nC 2.7 nC Gate Drain Charge 4.9 nC Turn-On DelayTime 7.1 ns 3.4 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, ID=-8A VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω 18.9 ns 8.4 ns IF=-8A, dI/dt=100A/µs 21.5 Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs 12.5 ns nC SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A 0.45 0.5 0.007 0.05 Irm VR=30V VR=30V, TJ=125°C 3.2 10 VR=30V, TJ=150°C 12 37 20 CT Units A 24.5 TJ=125°C gFS Max V VDS=-24V, VGS=0V IGSS IS Typ Maximum reverse leakage current Junction Capacitance VR=15V V mA pF 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4: Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE 2/5 www.freescale.net.cn AO4709 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 VDS=-5V 25 20 20 -4V -ID(A) -ID (A) 30 -4.5V -10V -6V -5V 15 -3.5V 10 15 10 125°C 5 5 VGS=-3V 25°C 0 0 0 1 2 3 4 5 0 0.5 60 1.5 2 2.5 3 3.5 4 4.5 5 1.60 ID=-7.5A 50 Normalized On-Resistance 55 VGS=-4.5V 45 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 40 35 30 25 VGS=-10V 20 1.40 VGS=-10V 1.20 VGS=-4.5V 1.00 15 0.80 10 0 5 10 15 20 0 25 25 80 100 125 150 175 1.0E+01 70 1.0E+00 ID=-7.5A 60 1.0E-01 50 125°C -IS (A) RDS(ON) (mΩ) 75 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 30 25°C 20 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 1.0E-05 10 1.0E-06 0 3 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/5 50 10 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4709 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-8A 1250 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 0 4 8 12 16 0 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 15 25 30 30 100µs 0.1s 20 T J(Max)=150°C T A=25°C 10µs RDS(ON) limited 1ms 10ms 1.0 10 40 T J(Max)=150°C, T A=25°C 10.0 5 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) 100.0 -ID (Amps) Crss 250 1s 20 10 10s DC 0.1 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on T Single Pulse 0.01 0.00001 4/5 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 www.freescale.net.cn AO4709 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 250 10 f = 1MHz Capacitance (pF) 1 IF (Amps) 200 125°C 0.1 0.01 150 100 50 25°C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VF (Volts) Figure 12: Schottky Forward Characteristics 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.7 100 0.6 Leakage Current (mA) IF=3A 0.5 VF (Volts) 5 0.4 IF=1A 0.3 0.2 10 1 VR=30V 0.1 0.01 0.001 0.1 0 25 50 75 100 125 Temperature (°C) 150 0 175 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature Z θJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance 5/5 www.freescale.net.cn 1000