AO4705 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4705 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO4705 is Pb-free (meets ROHS & Sony 259 specifications). AO4705L is a Green Product ordering option. AO4705 and AO4705L are electrically identical. A S S G 1 2 3 4 8 7 6 5 VDS (V) = -30V ID = -10A (VGS = -10V) RDS(ON) < 14mΩ (VGS = -20V) RDS(ON) < 16mΩ (VGS = -10V) SCHOTTKY VDS (V) = 30V, IF = 5A, VF<0.52V@3A D/K D/K D/K D/K Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain CurrentA TA=70°C B TA=25°C A Continuous Forward Current TA=70°C B S A MOSFET TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Thermal Characteristics Schottky Steady-State Steady-State t ≤ 10s A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units V ±25 -10 V -8 A -60 IF PD Schottky -30 IFM TA=25°C Maximum Junction-to-Lead ID IDM VKA Schottky reverse voltage Pulsed Forward Current K G SOIC-8 Pulsed Drain Current D 30 5 V 3.5 A 3 30 3 2 2 -55 to 150 -55 to 150 °C Typ Max Units 28 40 54 21 75 30 36 40 67 25 75 30 W °C/W °C/W AO4705 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -5 IGSS Gate-Body leakage current VDS=0V, VGS=±25V Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V 60 VGS=-10V, ID=-10A TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VGS=-20V, ID=-10A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd VGS=-10V, VDS=-15V, ID=-10A nA -3 V 16 16 21 10.7 14 25 VGS=0V, VDS=0V, f=1MHz ±100 13 26 VGS=0V, VDS=-15V, f=1MHz µA A VDS=-5V, ID=-10A SWITCHING PARAMETERS Qg Total Gate Charge Qgs -2.5 VGS=-4.5V, ID=-10A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Units -1 TJ=55°C RDS(ON) Max V VDS=-24V, VGS=0V VGS(th) IS Typ -0.72 mΩ mΩ mΩ S -1 V -4.2 A 2076 pF 503 pF 302 pF 2 Ω 37.2 nC 7 nC Gate Drain Charge 10.4 nC tD(on) Turn-On DelayTime 12.4 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=1.0Ω, RGEN=3Ω 8.2 ns 25.6 ns tf Turn-Off Fall Time 12 ns trr Body Diode Reverse Recovery Time IF=-10A, dI/dt=100A/µs 33 Qrr Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs 23 ns nC SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=3.0A 0.48 0.52 0.07 0.15 Irm Maximum reverse leakage current VR=24V VR=24V, TJ=125°C 4.2 20 VR=24V, TJ=150°C Junction Capacitance VR=15V 15 120 60 CT V mA pF 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in The SOA curve provides a single pulse rating. Rev 4: June 2005 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4705 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 -10V -8V 25 -6V VDS=-5V -5.5V 40 20 -ID(A) -ID (A) -5V 30 20 15 10 -4.5V 125°C 10 5 VGS=-4V 25°C 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 25 1.6 20 RDS(ON) (mΩ) Normalized On-Resistance ID=-10A VGS=-6V VGS=-10V 15 10 VGS=-20V 5 VGS=-10V 1.4 VGS=-20V 1.2 1 0.8 0 5 10 15 20 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=-10A 1.0E+00 50 1.0E-01 40 30 -IS (A) RDS(ON) (mΩ) 25 125°C 20 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 25°C 10 1.0E-05 1.0E-06 0 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4705 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=-15V ID=-10A 2500 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 2000 1500 Coss 1000 Crss 500 0 0 0 5 10 15 20 25 30 35 40 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 40 RDS(ON) limited 100µs TJ(Max)=150°C TA=25°C 10µs 30 1ms 10.0 Power (W) -ID (Amps) 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C 0.1 DC 1 10 0 0.001 100 -VDS (Volts) D=Ton/T TJ,PK =TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 10 10s 0.1 ZθJA Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4705 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 600 10 125°C Capacitance (pF) IF (Amps) 1 0.1 0.01 25°C 400 300 200 100 0.001 0.0 0.2 0.4 0.6 0.8 0 1.0 0 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics VF (Volts) Figure 12: Schottky Forward Characteristics 0.7 5 1.0E-01 0.6 IF=5A Leakage Current (A) VF (Volts) f = 1MHz 500 0.5 0.4 IF=3A 0.3 0.2 1.0E-02 1.0E-03 VR=24V 1.0E-04 1.0E-05 1.0E-06 0.1 0 25 50 75 100 125 Temperature (°C) 150 0 175 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 Alpha & Omega Semiconductor, Ltd. 0.01 0.1 1 T 10 100 1000