AP20T03GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
BVDSS
30V
RDS(ON)
50mΩ
ID
12.5A
S
Description
G D
S
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP20T03GJ) is available for low-profile applications.
G
D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
± 20
V
ID@TC=25℃
Continuous Drain Current
12.5
A
ID@TC=100℃
Continuous Drain Current
8
A
40
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
12.5
W
Linear Derating Factor
0.1
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
10
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200107041
AP20T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=8A
-
-
50
mΩ
VGS=4.5V, ID=5A
-
-
80
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=5V, ID=5A
-
6
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=10A
-
4
7
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.3
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=10A
-
30
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
10
-
ns
tf
Fall Time
RD=1.5Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
270
430
pF
Coss
Output Capacitance
VDS=25V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=5A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time2
IS=10A, VGS=0V,
-
16
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP20T03GH/J
20
18
o
T C =25 C
ID , Drain Current (A)
16
14
TC=150oC
16
10V
7.0V
5.0V
4.5V
10V
7.0V
5.0V
14
ID , Drain Current (A)
18
12
10
8
6
12
4.5V
10
8
6
4
4
V G =3.0V
V G =3.0V
2
2
0
0
0.0
0.5
1.0
1.5
2.0
0
2.5
1
1
2
2
3
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
75
1.8
ID=5A
T C =25 o C
I D =8A
V G =10V
1.5
Normalized R DS(ON)
RDS(ON)(mΩ )
65
55
45
1.3
1.0
0.8
0.5
35
3
5
7
9
-50
11
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
10
8
2.0
Is (A)
T j =150 o C
VGS(th) (V)
6
T j =25 o C
4
1.5
2
0
1.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP20T03GH/J
f=1.0MHz
14
1000
I D = 10 A
V DS =15V
V DS =20V
V DS =24V
10
Ciss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
100
Coss
Crss
4
2
0
10
0
3
6
9
12
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
100us
10
ID (A)
9
V DS ,Drain-to-Source Voltage (V)
1ms
10ms
100ms
1s
DC
1
0.1
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.01
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q