AP9452GG
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower gate charge
D
▼ Capable of 2.5V gate drive
▼ Single Drive Requirement
BVDSS
20V
RDS(ON)
50mΩ
ID
G
4A
S
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S
SOT-89
D
G
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
±16
V
3
4
A
3
2.5
A
12
A
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.25
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
100
℃/W
201224031
AP9452GG
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.03
-
V/℃
VGS=10V, ID=4A
-
-
38
mΩ
VGS=4.5V, ID=4A
-
-
50
mΩ
VGS=2.5V, ID=3A
-
-
80
mΩ
0.7
-
1.5
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS(th)
gfs
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
2
VDS=VGS, ID=250uA
2
VDS=5V, ID=3A
-
10
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±16V
-
-
±100
nA
ID=4A
-
6
10
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2
-
nC
VDS=10V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
13
-
ns
tf
Fall Time
RD=10Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
360
570
pF
Coss
Output Capacitance
VDS=20V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=4A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mount on FR4 board, t < 10s.
AP9452GG
40
50
o
T A =25 C
o
T A =150 C
ID , Drain Current (A)
40
ID , Drain Current (A)
4.5V
4.5V
30
3.5V
20
3.5V
20
10
2.5V
10
30
2.5V
V GS =1.5V
V GS =1.5V
0
0
0
1
2
3
4
5
0
6
Fig 1. Typical Output Characteristics
2
3
4
5
6
7
Fig 2. Typical Output Characteristics
1.8
65
I D =4A
ID=4A
1.6
V GS =4.5V
o
T A =25 C
Normalized R DS(ON)
55
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
45
1.4
1.2
1.0
35
0.8
0.6
25
1
3
5
7
9
-50
11
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
1.2
10
0.95
T j =25 o C
VGS(th) (V)
IS (A)
50
o
V GS , Gate-to-Source Voltage (V)
T j =150 o C
0
1
0.7
0.45
0.1
0.2
0.01
0
0.4
0.8
1.2
V SD , Source -to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9452GG
f=1.0MHz
1000
ID=4A
12
Ciss
V DS =16V
V DS =12V
V DS =10V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
14
6
100
Coss
Crss
4
2
10
0
0
2
4
6
8
10
12
14
1
16
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
10
ID (A)
9
V DS , Drain-to-Source Voltage (V)
1ms
10ms
1
100ms
1s
DC
0.1
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Rthja=100℃
℃ /W
0.01
0.001
0.1
1
10
100
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q