AP15P10GH/J Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic -100V RDS(ON) 210mΩ ID G ▼ RoHS Compliant BVDSS -16A S Description G The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control. The through-hole version (AP15P10GJ) is available for low-profile applications. G D D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V -16 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V -9.8 A 1 IDM Pulsed Drain Current 64 A PD@TC=25℃ Total Power Dissipation 96 W Linear Derating Factor 0.77 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 1.3 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice 200810051-1/4 AP15P10GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -100 - - V - -0.1 - V/℃ VGS=-10V, ID=-9A - - 210 mΩ BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA VGS=0V, ID=-1mA 2 Max. Units RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-9A - 8 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-100V, VGS=0V - - -25 uA Drain-Source Leakage Current (Tj=150oC) VDS=-80V, VGS=0V - - -100 uA Gate-Source Leakage VGS= ±20V - - ±100 nA ID=-9A - 37 60 nC IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-80V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-10V - 15 - nC VDS=-50V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-9A - 25 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=-10V - 56 - ns tf Fall Time RD=5.6Ω - 36 - ns Ciss Input Capacitance VGS=0V - 1180 1900 pF Coss Output Capacitance VDS=-25V - 250 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 3.6 5 Ω Min. Typ. IS=-9A, VGS=0V - - -1.3 V IS=-9A, VGS=0V, - 95 - ns dI/dt=-100A/µs - 410 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP15P10GH/J 30 30 -10V -10V TC=150oC T C =25 o C -7.0V -ID , Drain Current (A) -ID , Drain Current (A) -7.0V 20 -5.0V 10 -4.5V 20 -5.0V 10 -4.5V V G = - 3 .0V V G = - 3 .0V 0 0 0 5 10 15 20 25 0 Fig 1. Typical Output Characteristics 10 15 20 25 Fig 2. Typical Output Characteristics 550 2.4 I D = -9 A T C =25 ℃ I D = -9 A V G = - 10V 1.9 Normalized RDS(ON) 450 RDS(ON) (mΩ ) 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) 350 1.4 0.9 250 0.4 150 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 10 T j =150 o C 6 Normalized -VGS(th) (V) -IS(A) 8 T j =25 o C 4 2 1.1 0.7 0.3 0 0 0.4 0.8 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP15P10GH/J f=1.0MHz 12 10000 I D = -9A V DS = -80V 8 C iss 1000 C (pF) -VGS , Gate to Source Voltage (V) 10 6 C oss 100 4 C rss 2 10 0 0 10 20 30 1 40 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) -ID (A) 9 -V DS , Drain-to-Source Voltage (V) 10ms 10 100ms o T C =25 C Single Pulse 1s DC Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 1000 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 10 VG V DS =-5V T j =25 o C -ID , Drain Current (A) 8 T j =150 o C QG -10V 6 QGS QGD 4 2 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4