AP4418GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
35V
RDS(ON)
20mΩ
ID
G
▼ RoHS Compliant
BVDSS
33A
S
Description
G D
S
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4418GJ) is available for low-profile applications.
G
D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
35
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current
33
A
ID@TC=100℃
Continuous Drain Current
21
A
1
IDM
Pulsed Drain Current
100
A
PD@TC=25℃
Total Power Dissipation
34.7
W
Linear Derating Factor
0.28
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3.6
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200511051-1/4
AP4418GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
35
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=16A
-
-
20
mΩ
VGS=4.5V, ID=12A
-
-
40
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=16A
-
23
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=16A
-
10
16
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=30V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=16A
-
56
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=0.94Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
840
1340
pF
Coss
Output Capacitance
VDS=25V
-
145
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
2.1
Ω
Min.
Typ.
IS=16A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=16A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP4418GH/J
90
100
10V
o
T C =25 C
10V
o
T C = 150 C
7.0V
80
ID , Drain Current (A)
ID , Drain Current (A)
7.0V
60
5.0V
40
4.5V
60
5.0V
30
4.5V
20
V G =3.0V
V G =3.0V
0
0
0
2
4
6
8
0
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
8
1.8
I D = 16 A
V G =10V
I D = 12 A
o
Normalized RDS(ON)
T C =25 C
RDS(ON) (mΩ)
6
Fig 2. Typical Output Characteristics
70
50
30
10
1.4
1.0
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
Normalized VGS(th) (V)
1.8
15
IS (A)
4
V DS , Drain-to-Source Voltage (V)
T j =150 o C
10
T j =25 o C
1.4
1
0.6
5
0.2
0
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP4418GH/J
f=1.0MHz
16
1000
C iss
12
V DS = 20 V
V DS = 25 V
V DS = 30 V
C (pF)
VGS , Gate to Source Voltage (V)
I D = 16 A
8
C oss
100
C rss
4
10
0
0
10
20
30
1
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
100.0
100us
10.0
1ms
10ms
100ms
DC
o
1.0
T c =25 C
Single Pulse
0.1
Normalized Thermal Response (Rthjc)
1000.0
ID (A)
13
V DS ,Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
VG
ID , Drain Current (A)
V DS =5V
60
T j =25 o C
QG
T j =150 o C
4.5V
QGS
40
QGD
20
Charge
Q
0
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4