AP62T02GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristic
BVDSS
30V
RDS(ON)
12mΩ
ID
G
48A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP62T02GJ) are available for low-profile applications.
G
D
S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
± 20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
48
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
30
A
120
A
36.8
W
0.3
W/℃
29
mJ
24
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
3
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200504062-1/4
AP62T02GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=30A
-
10
12
mΩ
VGS=4.5V, ID=15A
-
13
16
mΩ
0.5
-
1.5
V
VDS=10V, ID=30A
-
34
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=175 C)
VDS=24V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=30A
-
13
20
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Drain-Source Leakage Current (T j=25 C)
o
IGSS
2
VDS=VGS, ID=250uA
o
IDSS
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8
-
nC
VDS=15V
-
7.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
90
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=0.5Ω
-
6.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
950
1420
pF
Coss
Output Capacitance
VDS=25V
-
220
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
160
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
IS=20A, VGS=0V,
-
30
-
ns
dI/dt=100A/µs
-
25
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.
2/4
AP62T02GH/J
115
120
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
90
10V
7.0V
T C =150 o C
92
ID , Drain Current (A)
T C =25 o C
60
5.0V
4.5V
69
46
30
V G =3.0V
V G =3.0V
23
0
0
0
2
4
6
0.0
2.0
4.0
6.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
15
I D =15A
T C =25 ℃
14
I D =30A
V G =10V
Normalized RDS(ON)
RDS(ON) (mΩ )
1.6
13
12
1.2
0.8
11
10
0.4
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
Normalized VGS(th) (V)
30
20
IS(A)
T j =150 o C
T j =25 o C
10
1.5
1.0
0.5
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP62T02GH/J
f=1.0MHz
12
10000
VGS , Gate to Source Voltage (V)
I D = 30 A
V DS = 15 V
V DS = 20 V
V DS =2 4 V
C (pF)
9
6
C iss
1000
3
C oss
C rss
100
0
0
5
10
15
20
1
25
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
ID (A)
100
100us
10
1ms
10ms
100ms
1s
DC
T c =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
100
VG
V DS =5V
80
ID , Drain Current (A)
QG
T j =25 o C
T j =150 o C
4.5V
60
QGS
QGD
40
20
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4