AP9974GS/P
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
60V
▼ Single Drive Requirement
RDS(ON)
12mΩ
▼ Fast Switching Characteristic
ID
D
72A
G
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
TO-263(S)
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9974GP) are available for low-profile applications.
G
Absolute Maximum Ratings
Parameter
Symbol
D
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
72
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
46
A
1
IDM
Pulsed Drain Current
300
A
PD@TC=25℃
Total Power Dissipation
104
W
Linear Derating Factor
0.8
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
1.2
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200318051
AP9974GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.07
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=45A
-
-
12
mΩ
VGS=4.5V, ID=30A
-
-
15
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=30A
-
50
-
S
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=48V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=30A
-
43
69
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
31
-
nC
VDS=30V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
48
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
42
-
ns
tf
Fall Time
RD=1Ω
-
67
-
ns
Ciss
Input Capacitance
VGS=0V
-
3180 5100
pF
Coss
Output Capacitance
VDS=25V
-
495
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
460
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1
1.5
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=45A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
45
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
40
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
AP9974GS/P
250
125
10V
7.0V
o
T C =25 C
10V
7.0V
5.0V
4.5V
o
T C = 150 C
100
ID , Drain Current (A)
ID , Drain Current (A)
200
150
5.0V
4.5V
100
75
50
V G =3.0V
25
50
V G =3.0V
0
0
0
2
4
6
0
8
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
Fig 2. Typical Output Characteristics
20
2.0
I D = 30 A
T C =25 o C
I D =45A
V G =10V
1.6
16
Normalized RDS(ON)
RDS(ON) (mΩ)
4
V DS , Drain-to-Source Voltage (V)
12
8
1.2
0.8
0.4
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
Normalized VGS(th) (V)
1.8
20
T j =25 o C
IS(A)
T j =150 o C
10
1.2
0.6
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9974GS/P
f=1.0MHz
16
10000
VGS , Gate to Source Voltage (V)
I D = 35 A
V DS =48V
V DS =38V
V DS =30V
C iss
C (pF)
12
8
1000
C oss
C rss
4
0
100
0
20
40
60
1
80
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thjc)
1000
100
ID (A)
100us
1ms
10
10ms
o
T C =25 C
Single Pulse
100ms
DC
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
125
VG
V DS =5V
T j =25 o C
ID , Drain Current (A)
100
T j =150 o C
QG
4.5V
75
QGS
QGD
50
25
Charge
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q