AP9563H/J
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
-40V
RDS(ON)
40mΩ
ID
G
-26A
S
Description
G D
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9563J) is available for low-profile applications.
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
±25
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-26
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-16
A
1
IDM
Pulsed Drain Current
-64
A
PD@TC=25℃
Total Power Dissipation
44.6
W
Linear Derating Factor
0.36
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200227041
AP9563H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-16A
-
-
40
mΩ
VGS=-4.5V, ID=-12A
-
-
60
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-12A
-
18
-
S
VDS=-40V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-32V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ±25V
-
-
±100
nA
ID=-12A
-
19
30
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=-250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-32V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
9
-
nC
VDS=-20V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-12A
-
37
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
52
-
ns
tf
Fall Time
RD=1.6Ω
-
80
-
ns
Ciss
Input Capacitance
VGS=0V
-
1460 2340
pF
Coss
Output Capacitance
VDS=-25V
-
230
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
180
-
pF
Min.
Typ.
IS=-12A, VGS=0V
-
-
-1.2
V
IS=-12A, VGS=0V,
-
40
-
ns
dI/dt=-100A/µs
-
54
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Test Conditions
Max. Units
AP9563H/J
100
90
-10V
-7.0V
o
T A = 25 C
-10V
-7.0V
TA=150oC
80
-ID , Drain Current (A)
-ID , Drain Current (A)
80
60
-5.0V
-4.5V
40
60
50
-5.0V
40
-4.5V
30
20
V G = -3.0 V
20
70
V G = -3.0 V
10
0
0
0
2
4
6
8
10
12
0
14
-V DS , Drain-to-Source Voltage (V)
4
6
8
10
12
14
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
46
1.8
I D = -12 A
T C =25 ℃
I D =-16A
V G =-10V
1.6
Normalized R DS(ON)
42
RDS(ON) (mΩ )
2
38
1.4
1.2
1.0
34
0.8
0.6
30
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
2.5
5
2
T j =150 o C
3
-VGS(th) (V)
-IS(A)
4
T j =25 o C
1.5
2
1
1
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9563H/J
-VGS , Gate to Source Voltage (V)
12
f=1.0MHz
10000
V DS =-32V
I D =-12A
10
C (pF)
8
6
C iss
1000
4
C oss
2
C rss
100
0
0
10
20
30
1
40
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
1ms
o
T c =25 C
Single Pulse
10ms
100ms
DC
1
Normalized Thermal Response (Rthjc)
100
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q