CBSL2SS NPN SILICON RF POWER TRANSISTOR E DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI CBSL2SS is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. D A C FEATURES: • Pg = 9.0 dB min. @ 960 MHz • P1dB = 2.0 Watts min. at 960 MHz • Omnigold™ Metalization System B G E F H #8-32UN C MAXIMUM RATINGS J IC 2.0 A VCBO 45 V VCER D IM M IN IM UM M AXIM U M inches / m m inches / m m 30 V A .976 / 24.800 1.000 / 25.4000 B .976 / 24.800 1.000 / 25.4000 VEBO 3.5 V C .028 / 0.700 PDISS 7.0 W @ TC = 25 °C E .161 / 4.100 F .098 / 2.500 .110 / 2.800 -65 °C to +200 °C G .200 / 5.100 .208 / 5.300 H .004 / 0.100 .006 / 0.150 -65 °C to +150 °C I .425 / 10.800 .465 / 11.800 J .200 / 5.100 2.05 / 5.200 TJ TSTG θJC .031 / 0.800 .138 / 3.500 D .196 / 5.000 ° 25 C/W CHARACTERISTICS SYMBOL ORDER CODE: ASI10868 TC = 25 °C NONETEST CONDITIONS BVCBO IC = 1.0 mA BVCER IC = 5.0 mA BVEBO IE = 1.0 mA ICBO VCB = 28 V hFE VCE = 5.0 V COB VCB = 24 V PG ηC VCC = 24 V RBE = 220 Ω IC = 100 mA MINIMUM TYPICAL MAXIMUM 45 V 30 V 3.5 V 20 f = 1.0 MHz POUT = 2.0 V f = 960 MHz UNITS 9.0 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 500 µA 120 --- 3.5 pF dB % REV. B 1/1