TRW53601 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE DESCRIPTION: The ASI TRW53601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz. FEATURES: • Diffused Ballast Resistors • Omnigold™ Metalization System • Common Emitter MAXIMUM RATINGS IC 400 mA VCES 50 V PDISS 3.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 31 °C/W CHARACTERISTICS 1 = COLLECTOR 3 = BASE TC = 25 °C NONETEST CONDITIONS SYMBOL 2 = EMITTER MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 20 V BVCES IC = 10 mA 50 V BVCBO IC = 1.0 mA 45 V BVEBO IE = 250 µA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V COB VCB = 28 V PO VCE = 20 V PIN = .100 W IMD IC = 100 mA 15 f = 1.0 MHz IE = 120 mA f = 2.0 GHz .8 GP 8.5 VSWR ∞ mA 120 --- 3.5 pF W -30 dB 9.5 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.25 REV. A 1/1