SDB3101F Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. SDB3101F Marking Package Code DB1 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KSD-2065-000 3 1 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 2 PIN Connections 1. Anode 2. NC 3. Cathode 1 SDB3101F Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit VR 30 V 0.5 A IF 0.2 A IFSM 2 A Power dissipation PD 150 mW Junction temperature Tj 150 °C Storage temperature Tstg -55 ~ 150 °C Reverse voltage Repetitive peak forward current IFRM Forward current Non-repetitive peak forward current(10ms) * * : δ = D/T =0.33 (T<1S) Ta=25°°C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage 1 VF(1) IF=10mA - - 0.4 V Forward voltage 2 VF(2) IF=30mA - - 0.5 V Reverse current IR VR=30V - - 1 µA Total capacitance CT VR=1V, f=1MHz - - 10 pF Reverse recovery time trr IF= IR=10mA, IRR= 1mA, RL=100Ω - - 5 ns KSD-2065-000 2 SDB3101F Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR -VR Fig. 3 CT-VR KSD-2065-000 3