SDT12SF Semiconductor TVS Diode Features • Transient protection for data lines to IEC61000-4-2(ESD) 15KV(air), 8KV(contact ) • Small package for use in portable electronics • Low operating and clamping voltage Applications • Cellular Handsets and Accessories • Microprocessor based equipment • Notebooks, Desktops and Servers Ordering Information Type NO. Marking Package Code SDT12SF S12 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 3 1.90 BSC 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 KSD-2076-000 1 2 PIN Connections 1. Cathode 2. Cathode 3. Anode 1 SDT12SF Absolute maximum ratings Characteristic Ta=25°C Symbol Ratings Unit Peak pulse power ( tp = 8/20 ㎲ ) PPK 300 W Peak pulse current (tp = 8/20 ㎲ ) IPP 12 A Lead soldering temperature TL 260 (10sec. ) °C Operating temperature TJ -55 ~ 125 °C Tstg -55 ~ 150 °C Storage temperature Ta=25°°C Electrical Characteristics Characteristic Reverse stand-off voltage Reverse breakdown voltage Symbol Test Condition Min. Typ. Max. VRWM VBR 12 It=1mA 13.3 Unit V V Reverse leakage current IR VRWM=12V , T=25℃ 1 ㎂ Clamping voltage VC IPP=1A, tp=8/20 ㎲ 19 V 120 pF 150 pF Junction capacitance CJ Junction capacitance CJ Pin 1 to 2 VR=0V, f=1MHz Pin 1 to 3 and Pin 2 to 3 VR=0V, f=1MHz KSD-2076-000 2 SDT12SF Electrical Characteristics Curves Fig. 1 Power derating curve Fig. 2 None-repetitive peak pulse power vs pulse time Fig. 3 Pulse Waveform KSD-2076-000 3