SDT12S Semiconductor TVS Diode Features • Transient protection for data lines to IEC61000-4-2(ESD) 15KV(air), 8KV(contact ) • Small package for use in portable electronics • Low operating and clamping voltage Applications • Cellular Handsets and Accessories • Microprocessor based equipment • Notebooks, Desktops and Servers Ordering Information Type NO. SDT12S Marking Package Code S12 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3 1.90 Typ. 3 2 0.4 Typ. 2.9±0.1 1 1 2 KSD-2078-000 -0.03 +0.05 0.124 0~0.1 0.38 1.12 Max. 0.2 Min. PIN Connections 1. Cathode 2. Cathode 3. Anode 1 SDT12S Absolute maximum ratings Characteristic Ta=25°C Symbol Ratings Unit Peak pulse power ( tp = 8/20 ㎲ ) PPK 300 W Peak pulse current (tp = 8/20 ㎲ ) IPP 12 A Lead soldering temperature TL 260 (10sec. ) °C Operating temperature TJ -55 ~ 125 °C Tstg -55 ~ 150 °C Storage temperature Ta=25°°C Electrical Characteristics Characteristic Reverse stand-off voltage Reverse breakdown voltage Symbol Test Condition Min. Typ. Max. VRWM VBR Reverse leakage current IR Clamping voltage VC Junction capacitance CJ Junction capacitance CJ 12 It=1mA 13.3 Unit V V VRWM=12V , T=25℃ 1 ㎂ IPP=1A, tp=8/20 ㎲ 19 V 120 pF 150 pF Pin 1 to 2 VR=0V, f=1MHz Pin 1 to 3 and Pin 2 to 3 VR=0V, f=1MHz KSD-2078-000 2 SDT12S Electrical Characteristics Curves Fig. 1 Power derating curve Fig. 2 None-repetitive peak pulse power vs pulse time Fig. 4 Clamping voltage vs peak pulse current Fig. 3 Pulse Waveform Fig. 5 Forward voltage vs forward currnet KSD-2078-000 3