SEMICONDUCTOR PG05DXTE6 TECHNICAL DATA TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. B B1 FEATURES C A IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Transient protection for data lines to C 30 Watts peak pulse power (tp=8/20 )s D Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. P Low clamping voltage. P 5 J H Low leakage current. P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 1. 2. 3. 4. 5. 6. APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. (TVS) D1 CATHODE COMMON ANODE (TVS) D2 CATHODE (TVS) D3 CATHODE N. C. (TVS) D4 CATHODE Personal digital assistants (PDA’s) TES6 Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. Marking 6 Type Name Peak Pulse Power (tp=8/20 s) Junction Temperature SYMBOL RATING UNIT PPK 30 W Tj 150 Reverse Stand-Off Voltage Lot No. 3 5 4 D4 D3 1 D2 2 3 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V 6.1 - 7.2 V VBR Reverse Breakdown Voltage 2 6 -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC 1 D1 Tstg Storage Temperature 4 5D MAXIMUM RATING (Ta=25) CHARACTERISTIC 5 It=1mA Reverse Leakage Current IR VRWM=3V - - 0.5 A Junction Capacitance CJ VR=0V, f=1MHz - - 15 pF 2010. 2. 5 Revision No : 4 1/2 PG05DXTE6 POWER DERATION CURVE 110 1K RATED POWER OR IPP (%) PEAK PULSE POWER PPP (W) NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME 100 10 1 10 100 PULSE DURATION tp (µs) 100 90 80 70 60 50 40 Peak Pulse Power 8/20us 30 20 10 0 Average Power 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) PEAK PULSE CURRENT IPP (%) PULSE WAVEFORM 110 Waveform Parameters : tr=8µs td=20µs 100 90 80 70 60 50 40 e -t td=lpp/2 30 20 10 0 0 5 10 15 20 25 30 TIME (µs) 2010. 2. 5 Revision No : 4 2/2