TBN4228 Series Semiconductor Si NPN Transistor Unit in mm SOT-323 □ Applications 2.1±0.1 1.25±0.05 3 0.30±0.1 □ Features 1 1.30±0.1 2.0±0.2 - VHF and UHF low noise amplifier 2 - High gain bandwidth product fT = 9 GHz at VCE = 3 V, IC = 5 mA 0.15±0.05 - High power gain |S21|2 = 6.6 dB at VCE = 3 V, IC = 5 mA, f = 2 GHz 0.90±0.1 - Low noise figure NF = 1.9 dB at VCE = 3 V, IC = 5 mA, f = 2 GHz NF = 1.2 dB at VCE = 3 V, IC = 3 mA, f = 1 GHz 0~0.1 |S21|2 = 12 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz 0.1 Min. Pin Configuration 1. Base 2. Emitter 3. Collector □ Absolute Maximum Ratings (TA = 25 ℃) Symbol Ratings Unit Collector to Base Voltage BVCBO 20 V Collector to Emitter Voltage BVCEO 8 V Emitter to Base Voltage BVEBO 3 V Collector Current IC 35 mA Total Power Dissipation Ptot 150 mW Operating Junction Temperature Tj 150 ℃ Tstg -65 ~ 150 ℃ Parameter Storage Temperature Caution : Electro Static Discharge sensitive device 1 TBN4228 Series □ Electrical Characteristics (TA = 25 ℃) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB = 15 V, IE = 0 mA - - 0.5 ㎂ Emitter Cut-off Current IEBO VEB = 2 V, IC = 0 mA - - 0.5 ㎂ DC Current Gain hFE VCE = 3 V, IC = 5 mA 70 100 250 fT VCE = 3 V, IC = 5 mA 6.0 9.0 - GHz VCE = 3 V, IC = 5 mA, f = 2 GHz 5.0 6.6 - dB VCE = 3 V, IC = 10 mA, f = 1 GHz 10.0 12.0 - 1.9 3.0 dB 0.8 pF Gain Bandwidth Product Insertion Power Gain |S21|2 Noise Figure NF VCE = 3 V, IC = 5 mA, f = 2 GHz - Reverse Transfer Capacitance Cre VCB = 3 V, IE = 0 mA, f = 1 MHz - 0.5 □ hFE Classification Marking SO2 SO1 hFE Value 70 - 140 125 - 250 □ Available Package Product Package Unit in mm Dimension TBN4228S SOT-23 2.9 ⅹ 1.3, 1.2t TBN4228U SOT-323 2.0 ⅹ 1.25, 1.0t TBN4228E SOT-523 1.6 ⅹ 0.8, 0.8t TBN4228KF SOT-623F 1.4 ⅹ 0.8, 0.6t 2 TBN4228 Series □ Typical Characteristics ( TA = 25 ℃, unless otherwise specified) Reverse Transfer Capacitance vs. Collector to Base Voltage Total Power Dissipation vs. Ambient Temperature 0.8 Reverse Transfer Capacitance, Cre (pF) Total Power Dissipation, Ptot (mW) 250 Free Air 200 150 100 50 0 0 25 50 75 100 125 f = 1 MHz 0.7 0.6 0.5 0.4 0.3 0.2 150 o Ambient Temperature, TA ( C) 0 2 4 6 8 10 12 Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current Collector Current vs. Base to Emitter Voltage 30 300 VCE = 3 V VCE = 3 V Collector Current, IC (mA) DC Current Gain, hFE 25 100 50 10 0.5 1 10 Collector Current, IC (mA) 50 20 15 10 5 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE (V) 3 TBN4228 Series Gain Bandwidth Product vs. Collector Current Collector Current vs. Collector to Emitter Voltage 14 Gain Bandwidth Product, fT (GHz) 14 Collector Current, IC (mA) 12 10 80 µA 8 60 µA 6 40 µA 4 IB = 20 µA 2 0 0 1 2 3 4 10 8 6 4 2 0 5 VCE = 3 V f = 2 GHz 12 1 10 Collector Current, IC (mA) Collector to Emitter Voltage, VCE (V) Insertion Power Gain vs. Collector Current Insertion Power Gain vs. Frequency 16 20 Insertion Power Gian, |S21| (dB) VCE = 3 V IC = 5 mA 2 2 Insertion Power Gain, |S21| (dB) 25 15 10 5 0 0.1 50 1 Frequency (GHz) 5 VCE = 3 V 14 f = 1 GHz 12 10 f = 2 GHz 8 6 4 2 0 1 10 50 Collector Current, IC (mA) 4 TBN4228 Series Noise Figure vs. Collector Current Maximum Available Gain vs. Collector Current 5 VCE = 3 V 18 VCE = 3 V 16 4 f = 1 GHz Noise Figure, NF (dB) Maximum Available Gain, MAG (dB) 20 14 12 f = 2 GHz 10 8 6 4 3 f = 2 GHz 2 f = 1 GHz 1 2 0 1 10 0 0.5 50 Collector Current, IC (mA) 1 10 50 Collector Current, IC (mA) Noise Parameter vs. Frequency (at VCE = 3 V, IC = 5 mA) Frequency (GHz) Fmin (dB) rn 0.9 1 1.5 2 1.579 1.465 1.745 1.984 0.493 0.474 0.446 0.364 Γopt Mag 0.5441 0.5147 0.4479 0.3423 Phase 24.21 30.26 38.57 47.01 Association gain (dB) 11.591 11.087 8.4 6.902 Gmax (dB) 15.517 14.827 10.687 8.926 5 TBN4228 Series □ Dimensions of TBN4228S in mm SOT-23 □ Dimensions of TBN4228E in mm SOT-523 □ Dimensions of TBN4228KF in mm Pin Configuration (SOT-23, SOT-523, SOT-623F) SOT-623F 1.2 0.8 0.9 Symbol Description 1 B Base 2 E Emitter 3 C Collector 3 0.2 2 0.11 0~0.1 0.6 1.4 1 Pin No. 6