NEC's C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES NE32500 OUTLINE DIMENSIONS (Units in µm) • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz 58 5.5 36.5 13 66 25 13 µm • GATE LENGTH: LG = 0.20 µ 38 • GATE WIDTH: WG = 200 µm Drain 89 DESCRIPTION 25 68 350 NEC's NE32500 is a Hetero-Junction FET chip that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. Source Source 76.5 100.5 60 Gate 21 NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 46.5 25 25 66 43 49.5 13 350 Thickness = 140 µm Bonding Area ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE32500 PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS 00 (Chip) UNITS MIN TYP MAX 0.45 0.55 NF Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz dB GA Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz dB 11.0 12.5 IDSS Saturated Drain Current, VDS = 2 V,VGS = 0 V mA 20 60 Transconductance, VDS = 2 V, ID = 10 mA mS 45 60 Gate to Source Leakage Current, VGS = -3 V µA gm IGSO VGS(off) RTH (CH-C) Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA Thermal Resistance1 (Channel to Case) V -0.2 °C/W 90 0.5 10.0 -0.7 -2.0 260 Note: 1. RF performance is determined by packaging and testing 10 chips per wafer. Wafer rejection criteria for standard devices is 2 rejects per 10 samples. California Eastern Laboratories NE32500 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage V -3.0 IDS Drain Current mA IDSS PT Total Power Dissipation2 mW 200 TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65 to +175 VDS = 2 V Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Chip mounted on Alumina heatsink (size: 3 x 3 x 0.6t) Drain Current, ID (mA) SYMBOLS DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 60 40 20 0 -2.0 -1.0 0 Gate to Source Voltage, VGS (V) TYPICAL PERFORMANCE CURVES (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 250 100 200 80 Drain Current, ID (mA) 150 100 50 VGS = 0 V 60 -0.2 V 40 -0.4 V 20 -0.6 V -0.8 V 0 0 50 100 150 200 250 0 Drain to Source Voltage, VDS (V) Ambient Temperature, TA (°C) NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V f = 12 GHz 16 1.0 12 0.5 8 Noise Figure, NF (dB) 20 GA Associated Gain, GA (dB) VDS = 2 V ID = 10 mA Noise Figure, NF (dB) 3.0 1.5 14 GA 13 12 2.0 11 1.5 10 1.0 0.5 NF NF 0 4 1 2 4 6 8 10 Frequency, f (GHz) 14 20 30 0 10 20 Drain Current, ID (mA) 30 Associated Gain, GA (dB) Total Power Dissipation, PT (mW) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NE32500 TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE32500 VDS = 2 V, IDS = 10 mA FREQUENCY S11 S21 (GHz) MAG ANG 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 0.999 0.998 0.996 0.992 0.976 0.962 0.962 0.943 0.928 0.920 0.900 0.881 0.869 0.856 0.839 0.831 0.818 0.804 0.796 0.784 0.782 -4 -7 -14 -20 -28 -36 -42 -48 -55 -60 -67 -72 -77 -82 -86 -91 -96 -99 -103 -106 -111 MAG 4.34 4.33 4.28 4.24 4.169 4.11 4.06 3.95 3.83 3.73 3.58 3.46 3.334 3.23 3.11 3.01 2.88 2.78 2.68 2.59 2.49 S12 ANG 177 174 168 163 158 152 148 143 139 134 129 126 122 118 115 112 108 105 103 100 96 MAG S22 ANG MAG ANG 82 84 81 76 71 66 62 58 55 51 47 43 40 37 34 32 29 27 24 22 20 0.564 0.562 0.559 0.557 0.551 0.546 0.539 0.533 0.526 0.519 0.508 0.503 0.494 0.488 0.483 0.476 0.472 0.468 0.464 0.460 0.456 -3 -6 -11 -17 -23 -29 -34 -40 -44 -49 -54 -58 -62 -66 -69 -72 -76 -79 -81 -84 -88 0.006 0.012 0.025 0.037 0.048 0.060 0.070 0.079 0.087 0.095 0.104 0.109 0.114 0.120 0.123 0.127 0.131 0.134 0.137 0.0141 0.142 Note: 1. Gain Calculation: 2 2 2 |S21| |S21| (K ± K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain MAG = ORDERING INFORMATION PART IDSS SELECTION (mA) NE32500 20 to 90 (Standard) NE32500N 0 to 60 NE32500M 50 to 90 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 6/21/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE 1-32