CREE C430CB290

SuperBlue™ LEDs
C430CB290-S0100
Cree’s SuperBlue LEDs combine highly efficient GaN with Cree’s proprietary G•SiC® substrate to deliver the ultimate
price/performance for high-intensity blue LEDs. The C430CB290-S0100 is designed for use in high ambient-light
conditions with a typical output of 1150 µW and a 465 nm dominant wavelength (at 20 mA). Cree’s CB series chips
are sorted onto tape and compatible with most radial and SMT LED assembly processes.
FEATURES
APPLICATIONS
•
High Performance – 1150 μW
•
Full-Color Displays & Moving Message Signs
•
Superior SiC Substrate Technology
•
Solid-State Incandescent Replacement Bulbs
•
465 nm Dominant Wavelength
•
High Ambient Panel Indicators
•
Excellent Chip-to-Chip Consistency
•
Color Printers & Scanners
•
High Reliability
•
Medical & Analytical Instruments
C430CB290-S0100 Chip Diagram
R3L, Rev. M
Datasheet: CP
Top View
Bottom View
Die Cross Section
Anode (+)
G•SiC LED Chip
275 x 275 μm
Mesa (junction)
246 x 246 μm
Gold Bond Pad
115 μm Diameter
SiC Substrate
t = 250 μm
Backside
Metallization
Cathode (-)
Subject to change without notice.
www.cree.com
Maximum Ratings at TA = 25°C Notes 1&3
C430CB290-S0100
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
70 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +100°C
Electrostatic Discharge Threshold (HBM)
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Forward
Voltage
(Vf, V)
Part Number
C430CB290-S0100
Radiant Flux
(P, μW)
Note 3
Reverse
Current
[I(Vr=5V), μA]
Flux
(mlm)
Peak
Wavelength
(λd, nm)
Dominant
Wavelength
(λd, nm)
Full Width
Half Max
(λD, nm)
Typ.
Max.
Min.
Typ.
Max.
Typ.
Typ.
Min.
Typ.
Max.
Typ.
4.0
4.5
850
1150
10
65
428
462
465
466
60
Mechanical Specifications
Description
C430CB290-S0100
Dimension
Tolerance
P-N Junction Area (μm)
246 x 246
± 25
Top Area (μm)
275 x 275
± 25
Bottom Area (μm)
275 x 275
± 25
Chip Thickness (μm)
250
± 25
Au Bond Pad Diameter (μm)
115
± 20
Au Bond Pad Thickness (μm)
1.2
± 0.5
Back Contact Metal Area (μm)
20
-5, +10t
Notes:
1.
2.
3.
4.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (<5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance A.
Specifications are subject to change without notice.
Copyright © 1998-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
CPR3L Rev. M
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com