CYStech Electronics Corp. Spec. No. : C656T3 Issued Date : 2004.09.01 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210T3 Description The BTA1210T3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features • High BVCEO • High DC current gain • High current capability • Monolithic construction with built-in base-emitter shunt resistors Equivalent Circuit Outline BTA1210T3 TO-126 C B E B：Base C：Collector E：Emitter BTA1210T3 ECB CYStek Product Specification CYStech Electronics Corp. Spec. No. : C656T3 Issued Date : 2004.09.01 Revised Date : Page No. : 2/4 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) RθJA RθJC Tj Tstg Limits Unit -120 -120 -5 -10 -15 (Note ) 1 10 125 12.5 150 -55~+150 V V V A A W W °C/W °C/W °C °C Note : Single Pulse Pw≦350µs, Duty≦2%. Characteristics (Ta=25°C) Symbol BVCEO BVCBO BVEBO ICBO ICEO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. -120 -120 -5 - Typ. - 1 100 - - Max. -200 -200 -2 -2 -4 -4.5 -2.8 12 300 Unit V V V µA µA mA V V V V K pF Test Conditions IC=-1mA, IB=0 IC=-100µA, IE=0 IE=-1mA, IC=0 VCB=-120V, IE=0 VCE=-120V, IB=0 VEB=-5V, IC=0 IC=-4A, IB=-16mA IC=-8A, IB=-80mA IC=-8A, IB=-80mA VCE=-4V, IC=-4A VCE=-4V, IC=-4A VCE=-4V, IC=-8A VCB=-10V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% BTA1210T3 CYStek Product Specification Spec. No. : C656T3 Issued Date : 2004.09.01 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 10000 10 VCESAT@IC=250IB Saturation Voltage---(V) Current Gain---HFE VCE=3V 1000 100 10 1 1 0.1 1 10 100 1000 Collector Current---IC(mA) 10000 100 10000 Power Derating Curve On voltage vs Collector Current 1.25 10 Power Dissipation---PD(W) VBEON@VCE=3V On Voltage---(V) 1000 Collector Current---IC(mA) 1 1 0.75 0.5 0.25 0 0.1 1 10 100 1000 10000 0 50 100 150 200 Ambient Temperature---TA(℃) Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(W) 12 10 8 6 4 2 0 0 BTA1210T3 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification Spec. No. : C656T3 Issued Date : 2004.09.01 Revised Date : Page No. : 4/4 CYStech Electronics Corp. TO-126 Dimension D E J I Marking: K A M B α3 A1210 1 2 3 α4 G C Style: Pin 1.Emitter 2.Collector 3.Base F H L 3-Lead TO-126 Plastic Package CYStek Package Code: T3 α1 α2 *: Typical Inches Min. Max. *3° *3° *3° *3° 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 DIM α1 α2 α3 α4 A B C D E Millimeters Min. Max. *3° *3° *3° *3° 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1210T3 CYStek Product Specification