CYStech Electronics Corp. Spec. No. : C214N3-H Issued Date : 2002.05.11 Revised Date : 2002.12.23 Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA14N3 Description • The BTNA14N3 is a darlington amplifier transistor • Complementary to BTPA64N3. Equivalent Circuit BTNA14N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC Pd Tj Tstg 30 30 10 0.3 225 150 -55~+150 V V V A mW °C °C BTNA14N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C214N3-H Issued Date : 2002.05.11 Revised Date : 2002.12.23 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCES BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. 30 30 10 10K 20K 125 - Typ. - Max. 100 100 1.5 2.0 6 Unit V V V nA nA V V Test Conditions IC=100uA IC=100uA IE=10uA VCE=30V VEB=10V IC=100mA, IB=0.1mA VCE=5V, IC=100mA VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=5V, IC=10mA, f=100MHz VCB=10V, f=1MHz MHz pF *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 100000 10000 Saturation Voltage---(mV) Current Gain---HFE HFE@VCE=5V 10000 1000 1000 100 1 10 100 Collector Current---IC(mA) BTNA14N3 VCE(SAT)@IC=1000IB 1000 1 10 100 1000 Collector Current ---IC(mA) CYStek Product Specification Spec. No. : C214N3-H Issued Date : 2002.05.11 CYStech Electronics Corp. Revised Date : 2002.12.23 Page No. : 3/4 Saturation Voltage vs Collector Current ON Voltage vs Collector Current 10000 VBE(SAT)@IC=1000IB VBE(ON)@VCE=5V ON Voltage --- (mV) Saturation Voltage---(mV) 10000 1000 1000 100 1 10 100 1000 0.1 Collector Current ---IC(mA) 1 100 1000 PD - Ta Cutoff Frequency vs Collector Current 250 Power Dissipation---PD(mW) Cutoff Frequency---FT(GHZ) 1 FT@VCE=5V 0.1 200 150 100 50 0 1 10 Collector Current---IC(mA) BTNA14N3 10 Collector Current ---IC(mA) 100 0 50 100 150 200 Ambient Temperature ---Ta(℃ ) CYStek Product Specification Spec. No. : C203N3-H Issued Date : 2002.05.11 Revised Date : 2002.12.23 Page No. : 4/4 CYStech Electronics Corp. SOT-23 Dimension A L Marking: 3 B S TE 1N 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C Style: Pin 1.Base 2.Emitter 3.Collector D H K J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Dimension and tolerance based on our Spec. dated Feb. 18,2002. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTNA14N3 CYStek Product Specification