CYSTEKEC MM4148SM

Spec. No. : C329SM
Issued Date : 2003.04.09
Revised Date :
Page No. : 1/3
CYStech Electronics Corp.
SURFACE MOUNT SWITCHING DIODE
MM4148SM
Description
The MM4148SM is designed for high-speed switching application in hybrid thick-and thin-film circuits.
Absolute Maximum Ratings
( Operating temperature range applies unless otherwise specified )
Characteristics
Symbol
Reverse Voltage
VR
Peak Reverse Voltage
VRM
Rectified Current(Average)
Half Wave Rectification with Resistive Load at
IO
Tamb=25°C and f ≥ 50Hz
IFSM
Surge Forward Current at t<1s and Tj=25°C
Ptot
Power Dissipation at Tamb=25°C
Junction Temperature
Tj
Storage Temperature Range
Ts
Value
75
100
Unit
V
V
150
mA
500
500
200
-65 to +200
mA
mW
°C
°C
Characteristics ( Tj=25°C)
Characteristics
Forward Voltage at IF=10mA
Leakage Current
VR=20V
VR =75V
VR =20V, Tj=150°C
Reverse Breakdown Voltage tested with 100us Pulses
Capacitance at VF= VR =0
Voltage Rise when Switching On Tested with 50mA Forward Pulses
Tp=0.1us, Rise Time<30ns, fp=5~100kHz
Reverse Recovery Time From
IF=-IR=10mA to IRR=-1mA, VR=6V, RL=100Ω
Thermal Resistance, Junction to Ambient Air
Rectification Efficiency at f=100MHz, VRF=2V
MM4148SM
Symbol
VF
V(BR)R
Ctot
Min
100
-
Typ
-
Max
1
25
5
50
4
Unit
V
nA
uA
uA
V
pF
Vfr
-
-
2.5
V
trr
-
-
4
ns
Rth JA
ηv
0.45
-
350
-
℃/W
-
IR
CYStek Product Specification
Spec. No. : C329SM
Issued Date : 2003.04.09
Revised Date :
Page No. : 2/3
CYStech Electronics Corp.
Characteristic Curves
Admissible Repetitive Peak Forward Current vs Pulse Duration
Peak Forward Current---IFRM(A)
10
ν =0
I
ν =.0.1
ν=tp/T
t
IFRM
t
1
T
ν =0.5
ν =0.2
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Duration---tp(s)
Dynamic Forward Resistance vs Forward
Current
Forward Current vs Forward Voltage
1000
100
10
Dynamic Resistance---Rf(Ω)
Forward Current---IF(mA)
10000
Tj=25℃
1
Tj=100℃
0.1
T j=25 ℃
f=1kHz
1000
100
0.01
0
0.2 0.4 0.6 0.8
1
10
1
0.01
1.2 1.4 1.6
0.1
1
10
100
Forward Current---IF(mA)
Forward Voltage---VF(V)
Admissible Power Dissipation vs Ambient
Temperature
Relative Capacitance vs Reverse Voltage
1.1
Tj=25℃
f=1kHz
1.05
500
Relative Capacitance--Ctot(VR)/Ctot(0V)
Amissible power dissipation-Ptot(mW)
600
400
300
200
100
0.95
0.9
0.85
0
0
50
100
150
200
Ambient Temperature---TA(℃ )
MM4148SM
1
250
0.8
0
2
4
6
8
10
Reverse Voltage---VR(V)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C329SM
Issued Date : 2003.04.09
Revised Date :
Page No. : 3/3
Mini-melf(SOD-80C) Dimension
Cathode Mark
A
B
D
C
LL-34
Mini-Melf
SOD-80C
CYStek package code:SM
*:Typical
Inches
Min.
Max.
0.0512 0.0591
0.0118 0.0197
DIM
A
B
Millimeters
Min.
Max.
1.30
1.50
0.30
0.50
DIM
C
D
Inches
Min.
Max.
0.0118 0.0197
0.1260 0.1417
Millimeters
Min.
Max.
0.30
0.50
3.2
3.6
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MM4148SM
CYStek Product Specification