0.5W SILICON PLANAR ZENER DIODES 1N5221A/B THRU 1N5281A/B Features · Standards zener voltage tolerance is ±20%.Add suffix "A" for ±10% tolerance and suffix "B" for ±5% tolerance DO-35(GLASS) other tolerance, non standards and higher zener voltage upon request 0.075(1.9) MAX. DIA. 1.083(27.5) MIN. 0.154(3.9) MAX. Mechanical Data · Case : DO-35 glass case 1.083(27.5) MIN. 0.020(0.52) MAX. DIA. · Polarity : Color band denotes cathode end · Weight : Approx. 0.13 gram Dimensions in inches and (millimeters) Absolute Maximum Ratings (Limiting Values) (TA=25℃) Symbols Value Units Ptot 5001) mW TJ 175 ℃ Zener current see table "Characteristics" Power dissipation at TA=75℃ Junction Temperature TSTG Storage Temperature range -65 to+200 ℃ 1) Valid provided that a distance of 8mm from case are kept at ambient temperature Electrical Characteristics (TA=25℃) Symbols Thermal resistance junction to ambient Forward voltage at IF=200mA Min. Max. Units RθJA 3001) ℃/W VF 1.1 1) Valid provided that a distance of 8mm from case are kept at ambient temperature Typ. V 1N5221A/B THRU 1N5249A/B SILICON PLANAR ZENER DIODES Zener Voltage range1) Type VZNOM3) IzT V mA Maximum zener impedance1) Maximum Reverse Leakage Current Temp Coefficient of zener voltage IR2) at VR TKVZ rZjt and rZjk at IZK Ω 1N5221A/B 2.4 1N5222A/B 1N5223A/B 2.5 2.7 1N5224A/B 2.8 1N5225A/B 3.0 <29 1N5226A/B 3.3 1N5227A/B 1N5228A/B Ω mA μA V %/K <1200 <100 <-0.085 <1250 <1300 <100 <75 <-0.085 <-0.080 <1400 <75 <1600 <50 <28 <1600 <25 <-0.070 3.6 <24 <1700 <15 <-0.065 3.9 <23 <1900 <10 1N5229A/B 4.3 <22 <2000 1N5230A/B 1N5231A/B 4.7 5.1 <19 <17 <1900 <1600 1N5232A/B 5.6 <11 <1600 1N5233A/B 6.0 <7 <1600 1N5234A/B 6.2 <7 <1000 1N5235A/B 6.8 <5 <750 1N5236A/B 7.5 <6 <500 1N5237A/B 8.2 <8 <500 1N5238A/B 1N5239A/B 8.7 9.1 <8 <10 1N5240A/B 10 <17 1N5241A/B 11 <22 1N5242A/B 12 <30 1N5243A/B 13 9.5 <13 1N5244A/B 14 9.0 <15 1N5245A/B 15 8.5 1N5246A/B 1N5247A/B 16 17 7.8 7.4 1N5248A/B 18 7.0 1N5249A/B 19 6.6 <30 20 <-0.080 1.0 <-0.075 <-0.060 <+0.055 2.0 2.0 <+0.030 <+0.030 3.0 <+0.038 3.5 <+0.038 4.0 <+0.045 5.0 <+0.050 6.0 <+0.058 6.5 <+0.062 6.5 7.0 <+0.065 <+0.068 8.0 <+0.075 <2 8.4 <+0.076 <1 9.1 <+0.077 <0.5 9.9 <+0.079 10 <+0.082 <16 11 <+0.082 <17 <19 12 13 <+0.083 <+0.084 <21 14 <+0.085 <23 14 <+0.086 5 0.25 3 <600 <0.1 1N5250A/B THRU 1N5281A/B SILICON PLANAR ZENER DIODES Zener Voltage range1) Type VZNOM3) IzT Maximum zener impedance1) Maximum Reverse Leakage Current Temp Coefficient of zener voltage IR2) at VR TKVZ rZjt and rZjk at IZK V mA Ω V %/K 1N5250A/B 20 6.2 <25 Ω 15 <-0.086 1N5251A/B 1N5252A/B 22 24 5.6 5.2 <29 <33 17 18 <-0.087 <-0.088 1N5253A/B 25 5.0 <35 19 <-0.089 1N5254A/B 27 4.6 <41 21 <-0.090 1N5255A/B 28 4.5 <44 21 <-0.091 1N5256A/B 30 4.2 <49 23 <-0.091 1N5257A/B 33 3.8 <58 <700 25 <-0.092 1N5258A/B 36 3.4 <70 <700 27 <+0.093 1N5259A/B 1N5260A/B 39 43 3.2 3.0 <80 <93 <800 <900 30 33 <+0.094 <+0.095 1N5261A/B 47 2.7 <105 <1000 36 <+0.095 1N5262A/B 51 2.5 <125 <1100 39 <+0.096 1N5263A/B 56 2.2 <150 <1300 43 <+0.096 1N5264A/B 60 2.1 <170 <1400 46 <+0.097 1N5265A/B 62 2.0 <185 <1400 47 <+0.097 1N5266A/B 68 1.8 <230 <1600 52 <+0.097 1N5267A/B 1N5268A/B 75 82 1.7 1.5 <270 <330 <1700 <2000 56 62 <+0.098 <+0.098 1N5269A/B 87 1.4 <370 <2200 68 <+0.099 1N5270A/B 91 1.4 <400 <2300 69 <+0.099 1N5271A/B 100 1.3 <500 -- -- 75 <+0.100 1N5272A/B 1N5273A/B 110 120 1.2 1.0 <700 <950 --- --- 83 90 <+0.100 <+0.100 1N5274A/B 130 0.95 <1100 -- -- 98 <+0.110 1N5275A/B 140 0.90 <1300 -- -- 105 <+0.110 1N5276A/B 1N5277A/B 150 160 0.85 0.80 <1500 <1700 --- --- 113 120 <+0.110 <+0.115 1N5278A/B 170 0.74 <1900 -- -- 127 <+0.115 1N5279A/B 180 0.68 <2200 -- -- 135 <+0.120 1N5280A/B 190 0.66 <2400 -- -- 142 <+0.120 1N5281A/B 200 0.65 <2500 -- -- 150 <+0.120 mA μA <600 0.25 <0.1 1) The zener impedance is derived from the 60Hz AC voltage which results when on AC current having an RMS value equal to 10% of the Zener current (IzT or IZK) is superimposed on IzT or IZK Zener impedance is measured at two points to insure a sharp knee on the breakdown curve and to eliminate unstable units. 2) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature. 3) Measured under thermal equilibrium and DC test conditions. 1N5221A/B THRU 1N5281A/B SILICON PLANAR ZENER DIODES Admissible power dissipation versus ambient temperature (Valid provided that leads at a distance of 10mm from case are kept at ambient temperature) 1N5225... mW 500 Ptot 400 300 200 100 0 0 200 ℃ 100 Tamb