MICROSEMI APT30DQ60BHB

APT30DQ60BHB
APT30DQ60BHB(G)
600V 2X30A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
TO
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• PFC
1
• Cooler Operation
• Popular TO-247 Package or
Surface Mount D3PAK Package
• Higher Reliability Systems
• Low Forward Voltage
• Increased System Power
Density
• Low Leakage Current
2
-24
7
3
1
3
• Avalanche Energy Rated
2
• RoHS Compliant
1 - Cathode 1
2 - Anode 1
Cathode 2
3 - Anode 2
MAXIMUM RATINGS
Symbol
VR
All Ratings per diode: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT30DQ60BHB(G)
UNIT
600
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 67°C, Duty Cycle = 0.5)
30
RMS Forward Current (Square wave, 50% duty)
51
IF(RMS)
IFSM
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
EAVL
Avalanche Energy (1A, 40mH)
TJ,TSTG
TL
Amps
320
20
mJ
-55 to 175
Operating and StorageTemperature Range
°C
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
MIN
TYP
MAX
IF = 30A
2.0
2.4
IF = 60A
2.4
IF = 30A, TJ = 125°C
1.7
VR = 600V
Volts
25
VR = 600V, TJ = 125°C
UNIT
μA
500
36
pF
1-2009
VF
Characteristic / Test Conditions
052-6321 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT30DQ60BHB(G)
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
IF = 30A, diF/dt = -200A/μs
VR = 400V, TC = 25°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 30A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
IF = 30A, diF/dt = -1000A/μs
Reverse Recovery Charge
IRRM
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
MIN
TYP
MAX
UNIT
-
23
-
30
-
55
-
3
-
175
ns
-
485
nC
-
6
-
75
ns
-
855
nC
-
22
Amps
MIN
TYP
ns
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RθJC
Characteristic / Test Conditions
MAX
UNIT
1.5
°C/W
Junction-to-Case Thermal Resistance
WT
Package Weight
Torque
0.22
oz
5.9
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
1.4
1.2
1.0
0.8
Note:
0.6
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
1.6
0.4
t1
t2
t
0.2
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0
10-5
10-4
10-3
0.1
10-2
1
10
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TC (°C)
0.481
Dissipated Power
(Watts)
0.0023
1.019
0.0531
ZEXT
052-6321 Rev A
1-2009
TJ (°C)
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
APT30DQ60BHB(G)
TYPICAL PERFORMANCE CURVES
250
160
TJ= 125°C
TJ= 150°C
TJ= 25°C
150
100
50
0
0
1
2
3
4
5
6
7
8
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
1400
60A
R
1200
600
15A
60
40
20
0
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
25
T = 125°C
J
V = 400V
60A
R
30A
15A
10
400
200
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.3
5
0
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
60
1.2
50
1.0
40
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
80
15
800
0
0.5
tRR
0.4
IRRM
30
20
0.3
QRR
0.2
10
Duty cycle = 0.5
TJ = 45°C
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
200
0
25
50
75
100
125
150
175
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
160
120
1-2009
CJ, JUNCTION CAPACITANCE (pF)
15A
100
20
30A
1000
0
120
IRRM, REVERSE RECOVERY CURRENT
(A)
Qrr, REVERSE RECOVERY CHARGE
(nC)
T = 125°C
J
V = 400V
R
30A
80
40
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
052-6321 Rev A
IF, FORWARD CURRENT (A)
trr, COLLECTOR CURRENT (A)
TJ= 55°C
200
T = 125°C
J
V = 400V
60A
140
APT30DQ60BHB(G)
Vr
diF /dt Adjust
+18V
APT30GT60BR
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Anode 1 / Cathode 2
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1-2009
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
052-6321 Rev A
5.38 (.212)
6.20 (.244)
Cathode 1
Anode 1 / Cathode 2
Anode 2
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.