APT30DQ60BHB APT30DQ60BHB(G) 600V 2X30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • PFC 1 • Cooler Operation • Popular TO-247 Package or Surface Mount D3PAK Package • Higher Reliability Systems • Low Forward Voltage • Increased System Power Density • Low Leakage Current 2 -24 7 3 1 3 • Avalanche Energy Rated 2 • RoHS Compliant 1 - Cathode 1 2 - Anode 1 Cathode 2 3 - Anode 2 MAXIMUM RATINGS Symbol VR All Ratings per diode: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT30DQ60BHB(G) UNIT 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 67°C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 51 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG TL Amps 320 20 mJ -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 30A 2.0 2.4 IF = 60A 2.4 IF = 30A, TJ = 125°C 1.7 VR = 600V Volts 25 VR = 600V, TJ = 125°C UNIT μA 500 36 pF 1-2009 VF Characteristic / Test Conditions 052-6321 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT30DQ60BHB(G) Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C IF = 30A, diF/dt = -200A/μs VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 30A, diF/dt = -200A/μs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr IF = 30A, diF/dt = -1000A/μs Reverse Recovery Charge IRRM VR = 400V, TC = 125°C Maximum Reverse Recovery Current MIN TYP MAX UNIT - 23 - 30 - 55 - 3 - 175 ns - 485 nC - 6 - 75 ns - 855 nC - 22 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC Characteristic / Test Conditions MAX UNIT 1.5 °C/W Junction-to-Case Thermal Resistance WT Package Weight Torque 0.22 oz 5.9 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. 1.4 1.2 1.0 0.8 Note: 0.6 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 1.6 0.4 t1 t2 t 0.2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0 10-5 10-4 10-3 0.1 10-2 1 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TC (°C) 0.481 Dissipated Power (Watts) 0.0023 1.019 0.0531 ZEXT 052-6321 Rev A 1-2009 TJ (°C) ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL APT30DQ60BHB(G) TYPICAL PERFORMANCE CURVES 250 160 TJ= 125°C TJ= 150°C TJ= 25°C 150 100 50 0 0 1 2 3 4 5 6 7 8 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 1400 60A R 1200 600 15A 60 40 20 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 25 T = 125°C J V = 400V 60A R 30A 15A 10 400 200 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.3 5 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 60 1.2 50 1.0 40 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 80 15 800 0 0.5 tRR 0.4 IRRM 30 20 0.3 QRR 0.2 10 Duty cycle = 0.5 TJ = 45°C 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 200 0 25 50 75 100 125 150 175 Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 160 120 1-2009 CJ, JUNCTION CAPACITANCE (pF) 15A 100 20 30A 1000 0 120 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) T = 125°C J V = 400V R 30A 80 40 0 1 10 100 200 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 052-6321 Rev A IF, FORWARD CURRENT (A) trr, COLLECTOR CURRENT (A) TJ= 55°C 200 T = 125°C J V = 400V 60A 140 APT30DQ60BHB(G) Vr diF /dt Adjust +18V APT30GT60BR 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Anode 1 / Cathode 2 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1-2009 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 052-6321 Rev A 5.38 (.212) 6.20 (.244) Cathode 1 Anode 1 / Cathode 2 Anode 2 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.