PNP RF Amplifier Transistor Surface Mount MSA1022–CT1 COLLECTOR 3 3 1 2 CASE 2 BASE 318D–03, STYLE1 SC–59 1 EMITTER MAXIMUM RATINGS (T A = 25 °C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol V CBO V CEO V EBO IC Value –30 –20 –5.0 –30 Unit Vdc Vdc Vdc mAdc Symbol PD TJ T stg Max 200 150 -55 ~ +150 Unit mW °C °C THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25 °C) Characteristic Collector Cutoff Current (V CB = –10 Vdc, I E = 0) Collector-Emitter Breakdown Voltage (V CE = –20 Vdc, I B = 0) Emitter-Base Breakdown Voltage (V EB = –5.0 Vdc, I C = 0) DC Current Gain (1) (V CE = –10 Vdc, I C = –1.0 mAdc) Current-Gain - Bandwidth Product (V CB = –10 Vdc, I E = 1.0 mAdc) 1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%. Symbo lMin Max Unit I CBO — –0.1 µAdc I CEO — –100 µAdc I EBO — –10 µAdc h FE 110 220 — f 150 — MHz T DEVICE MARKING Marking Symbol ECX The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. N1–1/1