ETL MSA1022-CT1

PNP RF Amplifier Transistor
Surface Mount
MSA1022–CT1
COLLECTOR
3
3
1
2
CASE
2
BASE
318D–03, STYLE1
SC–59
1
EMITTER
MAXIMUM RATINGS (T A = 25 °C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
V CBO
V CEO
V EBO
IC
Value
–30
–20
–5.0
–30
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
TJ
T stg
Max
200
150
-55 ~ +150
Unit
mW
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T A = 25 °C)
Characteristic
Collector Cutoff Current
(V CB = –10 Vdc, I E = 0)
Collector-Emitter Breakdown Voltage
(V CE = –20 Vdc, I B = 0)
Emitter-Base Breakdown Voltage
(V EB = –5.0 Vdc, I C = 0)
DC Current Gain (1)
(V CE = –10 Vdc, I C = –1.0 mAdc)
Current-Gain - Bandwidth Product
(V CB = –10 Vdc, I E = 1.0 mAdc)
1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%.
Symbo
lMin
Max
Unit
I CBO
—
–0.1
µAdc
I CEO
—
–100
µAdc
I EBO
—
–10
µAdc
h FE
110
220
—
f
150
—
MHz
T
DEVICE MARKING
Marking Symbol
ECX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N1–1/1