NPN General Purpose Amplifier Transistor Surface Mount MSD602–RT1 COLLECTOR 3 3 1 2 2 BASE 1 EMITTER Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 60 50 7.0 500 Unit Vdc Vdc Vdc mAdc IC(P) 1.0 Adc Symbol PD TJ T stg Max 200 150 –55 ~ +150 Unit mW °C °C CASE 318D–03, STYLE1 SC–59 MAXIMUM RATINGS (T A = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current–Continuous Collector Current–Peak THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristic Collector-Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 10 µAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector-Base Cutoff Current (V CB = 20Vdc, I E = 0) DC Current Gain (1) (V CE = 10 Vdc, I C = 150 mAdc) (V CE = 10 Vdc, I C = 500 mAdc) Collector-Emitter Saturation Voltage (I C = 300 mAdc, I B = 30 mAdc) Output Capacitance(VCB=10Vdc,IE=0,f=1.0MHz) 1. Pulse Test: Pulse Width < 300 µs, D.C < 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO I CBO Min 50 60 7.0 — Max — — — 0.1 hFE1 hFE2 VCE(sat) Cob 120 40 — — 240 — 0.6 15 Unit Vdc Vdc Vdc µAdc — Vdc pF DEVICE MARKING Marking Symbol WRX The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. N7–1/1