ETL MSB709-RT1

PNP General Purpose Amplifier
Transistor Surface Mount
MSB709-RT1
COLLECTOR
3
3
1
2
2
BASE
CASE 318D–03, STYLE1
SC–59
1
EMITTER
MAXIMUM RATINGS (T A = 25 °C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector Current - Peak
Symbol
V (BR)CBO
V (BR)CEO
V (BR)EBO
IC
I C(P)
Value
–60
–45
–7.0
–100
–200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Symbol
PD
TJ
T stg
Max
200
150
–55 ~ +150
Unit
mW
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T A = 25 °C)
Characteristic
Collector-Emitter Breakdown Voltage (IC=–2.0mAdc,IB=0)
Collector-Base Breakdown Voltage (IC=–10µAdc,IE=0)
Emitter-Base Breakdown Voltage (IE =–10µAdc,IE=0)
Collector-Base Cutoff Current (VCB =–45Vdc, IE=0)
Collector-Emitter Cutoff Current (VCE=–10Vdc, IB=0)
DC Current Gain (1)
(VCE=–10Vdc, IC = –2.0mAdc)
Collector-Emitter Saturation Voltage
(IC = –100mAdc, IB=–10mAdc)
Symbol
V (BR)CEO
V(BR)CBO
V (BR)EBO
ICBO
ICEO
Min
–45
–60
–7.0
—
—
Max
—
—
—
–0.1
–100
Unit
Vdc
Vdc
Vdc
µAdc
nAdc
hFE1
210
340
—
VCE(sat)
—
–0.5
Vdc
1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%.
DEVICE MARKING
Marking Symbol
ARX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N2–1/1