FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 3.75 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with gate resistance of 1000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions 200 300 mA - 100 - mS -1.0 -2.0 -3.5 V -5 - - V 25.5 27.0 - dBm 8.0 9.0 - dB - 38 - % - 27 40 °C/W VDS = 5V, IDS = 125mA Pinch-off Voltage Vp VDS = 5V, IDS =10mA Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Power-added Efficiency ηadd Thermal Resistance Rth IGS = -10µA VDS = 10V IDS ≈ 0.6 IDSS (Typ.), f = 8 GHz Channel to Case CASE STYLE: WG Edition 1.1 July 1999 Unit - gm VGSO Limit Typ. Max. VDS = 5V, VGS = 0V Transconductance Gate Source Breakdown Voltage Min. G.C.P.: Gain Compression Point 1 FLC057WG C-Band Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 200 Drain Current (mA) 4 3 2 VGS =0V -0.5V -1.0V 100 -1.5V 1 -2.0V 50 100 150 0 200 2 VDS=10V 10 f=8GHz IDS ≈ 0.6 IDSS 6 GHz P1dB (dBm) 8 GHz 24 8 GHz 20 40 30 ηadd 20 ηadd (%) 50 6 GHz 18 8 P1dB & ηadd vs. VDS OUTPUT POWER vs. INPUT POWER 22 6 Drain-Source Voltage (V) Case Temperature (°C) 28 IDS ≈ 0.6 IDSS 26 Pout 4 50 28 ηadd 27 40 P1dB 30 26 10 16 8 10 12 14 16 18 20 9 10 Drain-Source Voltage (V) Input Power (dBm) 2 ηadd (%) 0 Output Power (dBm) Total Power Dissipation (W) 5 FLC057WG C-Band Power GaAs FET S11 S22 +j50 +j100 +j25 10 1GHz 9 +j250 8 +j10 2 7 6 4 25 10 5 50Ω 100 180° 250 10 9 1GHz 8 -j10 8 6 4 2 SCALE FOR |S21| SCALE FOR |S12| 0 S21 S12 +90° 3 7 6 -j250 2 5 4 3 2 -j25 1GHz -j100 -j50 3 1GHz 4 5 2 6 9 7 3 8 4 10 5 7 .02 6 8 9 10 .04 .06 .08 -90° MAG ANG S-PARAMETERS VDS = 10V, IDS = 125mA S21 S12 MAG ANG MAG ANG 500 .973 -47.9 7.249 147.9 .016 1000 .941 -85.1 5.946 121.8 2000 .912 -129.5 3.846 3000 .897 -151.8 4000 .889 5000 FREQUENCY (MHZ) 0° S11 S22 MAG ANG 60.6 .545 -20.4 .026 38.1 .519 -38.2 86.0 .033 8.9 .514 -66.2 2.675 62.2 .033 -8.5 .562 -86.5 -164.8 2.058 44.1 .032 -17.6 .618 -101.2 .881 -176.2 1.712 27.8 .033 -25.1 .658 -113.0 6000 .869 171.6 1.506 11.2 .033 -31.0 .689 -125.1 7000 .847 159.0 1.339 -6.1 .035 -39.4 .717 -138.5 8000 .816 148.5 1.199 -21.6 .033 -41.3 .745 -149.3 9000 .787 139.7 1.125 -35.4 .037 -41.0 .773 -157.4 10000 .740 129.4 1.149 -49.4 .045 -40.5 .796 -163.1 Download S-Parameters, click here 3 FLC057WG C-Band Power GaAs FET 2-Ø1.6±0.01 (0.063) 1.0 Min. (0.039) Case Style "WG" Metal-Ceramic Hermetic Package 2.8 (0.11) 0.1±0.05 (0.004) 2 2.5±0.15 (0.098) 1 3 0.03 8.5±0.2 (0.335) 0.6 0.8±0.1 (0.031) 1.0 Min. (0.039) 0.5 (0.020) 6.1±0.1 (0.240) 2.5 Max. (0.098) 1. 2. 3. 4. Gate Source Drain Source Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4