FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 100 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 80.4 and -17.4 mA respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Symbol IDSS gm Vp Test Conditions* VDS = 5V, VGS = 0V VDS = 5V, IDS = 7200mA VDS = 5V, IDS = 720mA Drain Current Power added Efficiency Thermal Resistance Channel Temperature Rise ηadd Rth ∆Tch A mS V -5 - - V 43.0 44.5 - dBm f=900MHz 11.0 13.0 - dB f=1.8GHz 10.0 12.0 - dB f=2.6GHz 8.0 - 10.0 6.0 - dB A Channel to Case - 44 1.1 1.5 % °C/W (10V x Idsr - Pout + Pin) x Rth - - 80 °C f=900MHz f=1.8GHz f=2.6GHz VDS = 10V IDS = 0.5 IDSS (Typ.) 8.0 - G.C.P.: Gain Compression Point * Under fixed VGS bias condition Edition 1.2 July 1999 Unit -3.5 CASE STYLE: IL -1.0 Limit Typ. Max. 12 16 6000 -2.0 Gate Source Breakdown Voltage VGSO IGS = -720µA FLL300IL-1 Output Power FLL300IL-2 P1dB at 1dB G.C.P. VDS = 10V FLL300IL-3 IDS = 0.5 IDSS FLL300IL-1 (Typ.) Power Gain FLL300IL-2 G1dB at 1dB G.C.P. FLL300IL-3 Idsr Min. - 1 FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET Total Power Dissipation (W) POWER DERATING CURVE 120 100 80 60 40 20 0 50 100 150 200 Case Temperature (°C) Drain Current (A) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 12 VGS =0V 9 -0.5V -1.0V 6 3 -1.5V -2.0V 0 2 4 6 8 10 Drain-Source Voltage (V) 2 FLL300IL-1 L-Band Medium & High Power GaAs FET S11 S22 +j50 S21 S12 +90° +j100 +j25 0.5GHz 1.5GHz +j250 +j10 1.0 1.5GHz 1.0 1.3 1.0 0.5GHz 10 25 100 50Ω 180° 250 -j10 1.0 0.5GHz 1 SCALE FOR |S21| -j250 .01 .02 -j25 -j100 -90° -j50 ANG .961 .957 .956 .955 .948 .943 .933 .923 .910 .898 .875 176.7 174.7 172.5 170.6 168.2 166.0 161.9 158.8 155.1 151.0 145.8 1.318 1.162 1.053 .989 .951 .944 .952 .975 1.021 1.094 1.182 70.0 64.9 59.9 55.1 49.6 44.5 37.9 31.7 24.7 16.8 8.4 .005 .005 .006 .007 .008 .009 .010 .012 .015 .017 .023 26.1 26.6 33.0 32.2 28.6 25.7 32.6 25.2 23.1 19.7 15.1 S22 MAG ANG .889 .884 .880 .871 .865 .855 .841 .828 .810 .789 .760 174.0 173.0 171.7 170.5 169.5 167.7 167.0 165.1 163.3 161.1 158.9 Download S-Parameters, click here OUTPUT POWER vs. INPUT POWER 46 VDS=10V IDS ≈ 0.5 IDSS f = 0.9 GHz 44 42 Pout 40 38 60 45 ηadd 30 15 36 23 25 27 29 31 33 Input Power (dBm) 3 0 ηadd (%) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 S-PARAMETERS VDS = 10V, IDS = 6000mA S21 S12 MAG ANG MAG ANG S11 MAG Output Power (dBm) FREQUENCY (MHZ) 1.5GHz 1.5GHz SCALE FOR |S12| 0 2 0° FLL300IL-2 L-Band Medium & High Power GaAs FET S11 S22 +j50 S21 S12 +90°C +j100 +j25 2.6 2.2 2.0 +j101.4 1.2 2.4 2.4 +j250 2.4 1.8 1.6 1.8 2.2 1.6 1.2 2.0 10 0 50Ω 2.8 100 2.8 2.6 2.8 25 2.6 2.2 2.6 5 250 4 3 1.2 2 2.4 1 ±180° SCALE FOR |S | 21 2.0 3.0 2.2 -j250 2.0 3.0 -j25 -j100 -j50 ANG .953 .944 .933 .923 .903 .864 .788 .654 .506 .522 .652 .716 .746 .771 .763 .722 .626 .508 .544 .686 .791 167.2 164.6 161.0 157.3 153.3 148.3 142.2 137.8 144.5 161.1 162.2 154.3 150.0 139.4 125.1 106.2 75.9 23.4 -45.8 -94.8 -123.6 .788 .811 .882 .997 1.169 1.419 1.752 2.179 2.526 2.523 2.249 1.946 1.984 1.902 1.887 1.935 1.998 1.932 1.613 1.136 .726 34.0 28.0 21.5 14.0 5.3 -6.9 -23.0 -45.3 -74.2 -104.9 -131.4 -149.5 -167.8 171.9 152.6 133.4 106.5 73.3 36.7 3.4 -22.0 .003 .005 .006 .007 .008 .010 .014 .018 .023 .024 .022 .021 .023 .022 .023 .025 .027 .026 .021 .016 .010 44 VDS=10V IDS ≈ 0.5 IDSS f = 1.8 GHz Pout 42 60 40 45 38 ηadd 36 30 15 24 26 28 30 32 34 Input Power (dBm) 4 0 0° 2.8 1.8 0.1 0.2 S22 MAG .869 .864 .859 .857 .850 .853 .868 .889 .923 .907 .852 .789 .730 .644 .555 .460 .323 .161 .031 .210 .370 ANG 169.9 169.0 167.9 166.2 165.2 164.7 162.7 160.0 155.3 148.1 141.8 136.7 130.5 124.2 117.9 113.5 103.1 89.3 -62.8 -105.9 -118.5 Download S-Parameters, click here OUTPUT POWER vs. INPUT POWER 46 3.0 1.4 1.6 -90°C -32.3 -31.6 -50.9 -50.6 -60.5 -71.2 -86.6 -109.7 -136.9 -167.7 165.4 148.1 129.7 110.3 91.3 71.1 41.9 9.1 -25.1 -63.2 -90.8 ηadd (%) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 S-PARAMETERS VDS = 10V, IDS = 6000mA S21 S12 MAG ANG MAG ANG S11 MAG Output Power (dBm) FREQUENCY (MHZ) SCALE FOR |S12| 1.8 3.0 -j10 1.6 1.2 FLL300IL-3 L-Band Medium & High Power GaAs FET S11 S22 +j50 +j100 +j25 1.5GHz .04 .03 +j250 2.0 .02 2.5 1.5GHz 3.0 10 0 25 .01 50Ω 100 250 180° 3.0 3.5 4 2.5 3 2 1 SCALE FOR |S21| 3.5 3.5 SCALE FOR |S12| 2.5 2.5 +j10 S21 S12 +90° 3.0 1.5 3.0 0° 1.5 2.0 -j10 -j250 3.5 2.0 -j25 -j100 -j50 S21 S12 ANG MAG ANG MAG .902 .872 .829 .756 .645 .463 .217 .065 .285 .441 .523 .560 .583 .578 .564 .564 .605 .731 .813 .864 .895 130.6 123.3 114.2 102.9 88.8 71.7 54.5 173.9 175.2 157.4 137.6 119.7 99.3 72.8 37.9 -4.7 -44.2 -80.2 -109.5 -131.0 -147.1 1.169 1.324 1.539 1.824 2.199 2.604 2.939 3.080 3.055 2.938 2.843 2.768 2.791 2.840 2.854 2.789 2.536 1.981 1.502 1.130 .853 -3.1 -13.4 -25.8 -40.5 -57.7 -78.8 -103.5 -129.4 -153.9 -176.2 166.5 146.9 126.7 104.2 79.1 51.3 20.3 -9.0 -32.7 -52.7 -69.8 .009 .010 .012 .016 .019 .024 .028 .031 .032 .032 .032 .033 .035 .036 .039 .039 .039 .031 .023 .019 .013 S22 ANG -55.7 -69.8 -81.5 -96.1 -113.4 -134.7 -160.3 173.7 150.2 128.8 110.8 91.6 72.2 49.8 28.0 0.5 -33.2 -63.6 -88.0 -106.9 -121.2 OUTPUT POWER vs. INPUT POWER 46 VDS=10V IDS ≈ 0.5 IDSS f = 2.6 GHz 44 Pout 42 60 40 45 30 38 36 ηadd 15 0 26 28 30 32 34 36 Input Power (dBm) 5 MAG .854 .852 .847 .847 .854 .860 .867 .848 .808 .752 .700 .628 .550 .461 .348 .208 .081 .132 .253 .345 .408 ANG 155.0 153.2 150.7 148.5 146.1 142.2 137.4 131.6 125.3 119.7 119.6 113.6 109.0 102.5 94.4 91.8 125.9 -167.4 -158.6 -162.2 -168.1 Download S-Parameters, click here ηadd (%) 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 S11 MAG Output Power (dBm) FREQUENCY (MHZ) -90° S-PARAMETERS VDS = 10V, IDS = 6000mA FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET 2.0 Min. (0.079) Case Style "IL" Metal-Ceramic Hermetic Package 0.1 (0.004) 17.4±0.25 (0.685) 8.0±0.15 (0.315) 1 2 4 3 2.4±0.15 (0.094) 2.0 Min. (0.079) 4-R 1.3±0.15 (0.051) 1.0 (0.039) 5.5 Max. (0.217) 1.9 (0.075) 16.4 (0.646) 20.4±0.2 (0.803) 24±0.2 (0.945) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 6