FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 83.3 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 53.6 and -11.6 mA respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current Symbol Test Conditions IDSS gm VDS = 5V, VGS = 0V VDS = 5V, IDS = 4800mA Vp VDS = 5V, IDS = 480mA VGSO P1dB G1dB Idsr Power added Efficiency ηadd Thermal Resistance Rth ∆Tch Channel Temperature Rise IGS = -480µA Limit Typ. Max. 8 12 -1.0 4000 -2.0 -3.5 mS V -5 - - V 42.5 - dBm 13.0 - 11.0 - dB dB 11.0 - dB f=1.5GHz f=2.3GHz 41.5 f=2.6GHz VDS = 10V IDS = 0.6 IDSS f=1.5GHz 12.0 (Typ.) f=2.3GHz 10.0 f=2.6GHz 10.0 Unit A VDS = 10V IDS = 0.6 IDSS (Typ.) - 4.8 6.0 A - 34 - % Channel to Case - 1.6 1.8 °C/W 10V x Idsr x Rth - - 80 °C CASE STYLE: IB Edition 1.1 July 1999 Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET Total Power Dissipation (W) POWER DERATING CURVE 100 80 60 40 20 0 50 100 150 200 Case Temperature (°C) Drain Current (mA) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 8000 VGS =0V 6000 -0.5V 4000 -1.0V 2000 -1.5V -2.0V 0 2 4 6 8 10 Drain-Source Voltage (V) 2 FLL200IB-1 L-Band Medium & High Power GaAs FET S11 S22 3 +j100 1.1 +j25 1GHz 2.5 1.6 1.4 1.2 1GHz +j10 2 1.2 1.8 2 1.3 +j250 1.9 2.5 0 2 10 1.9 1.8 25 1.4 50Ω 180° 0.1 250 1.8 0.06 1 2 1GHz 1GHz 1.6 2.5 1.6 1.5 1.4 1.7 1.7 1.9 1.8 2 SCALE FOR |S21| 1.7 1.5 -j10 S21 S12 +90° SCALE FOR |S12| +j50 1.3 -j25 1.3 -j100 1.4 1.5 -90° -j50 S-PARAMETERS VDS = 10V, IDS = 4800mA S21 S12 MAG ANG MAG ANG S11 MAG ANG .888 .841 .754 .584 .353 .341 .490 .609 .680 .719 .753 .942 124.3 110.9 91.4 60.4 1.2 -87.7 -133.3 -156.4 -170.8 179.5 173.8 145.3 1.517 1.761 2.113 2.559 2.876 2.754 2.443 2.215 2.096 2.034 1.953 .563 13.5 -.2 -18.0 -42.4 -73.3 -105.9 -132.5 -156.1 -179.2 155.9 126.8 -15.5 .009 .012 .015 .019 .022 .021 .019 .017 .016 .015 .015 .006 -5.0 -17.3 -33.3 -56.8 -86.9 -119.8 -147.5 -172.2 162.7 135.4 103.5 -39.0 S22 MAG ANG .819 .796 .786 .790 .790 .800 .787 .764 .732 .716 .729 .451 150.3 147.5 145.9 142.7 140.7 136.5 131.6 127.5 123.4 121.2 116.4 32.7 Download S-Parameters, click here OUTPUT POWER vs. INPUT POWER 44 VDS=10V IDS ≈ 0.6 IDSS f = 1.5 GHz 42 Pout 40 50 38 40 ηadd 36 34 32 30 20 21 23 25 27 29 31 Input Power (dBm) 3 10 ηadd (%) Output Power (dBm) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2500 1.2 -j250 1.6 FREQUENCY (MHZ) 0° 1.1 FLL200IB-2 L-Band Medium & High Power GaAs FET S11 S22 4GHz +j25 4GHz 1.5 1.6 1.0GHz 3 +j100 2.6 1.7 2.5 3.5 2 1.8 +j250 1.5 +j10 1.0GHz 2.4 2.3 2.5 2.5 1.9 0 25 10 50Ω 2.1 2.0 100 2.6 2.6 1 180° 0.1 250 3.0 2.3 2.1 2.8 -j10 1.9 2.2 2.7 2.9GHz -j250 0° 1.7 1.8 2.9 1.9 2.1 2.8 2.0 -j25 -j100 -90° -j50 S11 MAG ANG .944 .937 .880 .791 .379 .309 .408 .480 .803 .915 .926 157.3 127.4 90.3 68.9 27.8 82.4 41.8 -43.5 -158.4 135.8 102.3 S-PARAMETERS VDS = 10V, IDS = 4800mA S21 S12 MAG ANG MAG ANG 1.164 .835 1.090 1.421 2.283 2.569 2.632 2.631 .772 .030 .013 60.9 28.8 -14.0 -39.7 -100.2 179.4 128.5 55.1 -68.4 -151.4 -8.2 .004 .006 .010 .014 .025 .031 .035 .039 .012 .001 .002 -.8 -16.3 -55.4 -81.9 -147.2 128.7 78.5 6.2 -111.1 72.1 8.3 S22 MAG .906 .855 .826 .810 .814 .789 .651 .290 .718 .937 .947 ANG 166.1 153.8 141.4 135.6 125.6 104.9 83.8 26.4 -177.7 131.5 109.9 Download S-Parameters, click here OUTPUT POWER vs. INPUT POWER 44 VDS=10V IDS ≈ 0.6 IDSS f = 2.3 GHz 42 Pout 40 50 38 40 ηadd 36 34 32 30 20 23 25 27 29 31 33 Input Power (dBm) 4 10 ηadd (%) Output Power (dBm) 500 1000 1500 1700 2000 2300 2500 2700 3000 3500 4000 2.7 2.5 2.0 3.0 FREQUENCY (MHZ) 2.8 2.9GHz 0.06 SCALE FOR |S21| 2.9 2.7 2.4 2.2 2 S21 S12 +90° SCALE FOR |S12| +j50 FLL200IB-3 L-Band Medium & High Power GaAs FET S11 S22 4.5 4.0 2.5 1.5GHz 3.5 3.5 3.4 3.3 10 2 3.5 2.9 50Ω 2.2 100 2.3 180° 0.10 250 5.0 2.7 2.6 2.5 2.9 2.3 0.06 2.8 2.7 3.3 -j10 3.1 2.7 2.1 2.8 3.2 3.4 4 +j250 2.0 2.7 0 2.8 2.0 2.6 2.6 3.2 -j250 2.9 1.5GHz 3.0 3.0 0.06 0.10 0° SCALE FOR |S21| 2.0 2.4 2.1 2.3 -j25 2.2 -j100 -90° -j50 S11 MAG ANG .962 .933 .864 .548 .220 .214 .923 .953 .952 .953 166.6 144.9 115.5 64.6 -111.2 -85.0 178.6 150.4 131.2 113.9 S-PARAMETERS VDS = 10V, IDS = 4800mA S21 S12 MAG ANG MAG ANG 1.649 1.143 1.368 2.320 3.742 4.634 .375 .065 .020 .008 63.2 30.0 -12.1 -75.5 -173.7 7.9 -118.7 -162.9 168.3 143.6 .007 .015 .031 .059 .051 .039 .017 .005 .001 .001 41.9 32.2 2.8 -50.7 -138.8 -126.8 117.2 84.4 75.2 63.7 S22 MAG .837 .798 .726 .526 .560 .782 .898 .939 .951 .957 ANG 168.9 156.2 142.6 137.3 107.0 -128.3 166.5 147.5 133.4 119.1 Download S-Parameters, click here OUTPUT POWER vs. INPUT POWER Output Power (dBm) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 2.6 2.5 3.1 FREQUENCY (MHZ) 2.9 3.1 2.0 2.2 2.1 3.0 2.6 2.5 44 VDS=10V IDS ≈ 0.6 IDSS f = 2.6 GHz 42 Pout 40 50 38 40 ηadd 36 34 32 30 20 23 25 27 29 31 33 Input Power (dBm) 5 10 ηadd (%) 4.0 8 6 4.5 +j10 +j100 SCALE FOR |S12| 5.0 1.5GHz 5.0 +j25 S21 S12 +90° 1.5GHz +j50 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET 2.0 Min. (0.079) Case Style "IB" Metal-Ceramic Hermetic Package 1 2-R 1.6±0.15 (0.063) 0.1 (0.004) 12.9±0.2 (0.508) 2 3 2.6±0.15 (0.102) 2.0 Min. (0.079) 0.6 (0.024) 5.2 Max. (0.205) 1.45 (0.059) 0.2 Max. (0.008) 10.7 (0.421) 1. Gate 2. Source (Flange) 3. Drain 12.0 (0.422) Unit: mm(inches) 17.0±0.15 (0.669) 21.0±0.15 (0.827) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 6