FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design which offers excellent linearity, ease of matching, and greater consistency in covering the frequency band of 3.5 to 3.7 GHz. This new product is uniquely suited for use in WLL applications as it offers high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 136 W Tc = 25°C Total Power Dissipation PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch +175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with gate resistance of 5Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Drain Current Pinch-Off Voltage Gate-Source Breakdown Voltage Symbol IDSS Vp VGSO Output Power Pout Linear Gain (Note 1) GL Power-Added Efficiency ηadd Drain Current IDSR Thermal Resistance Rth Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 220mA IGS = -2.2mA VDS = 12V f = 3.6 GHz IDS = 5.0A Pin = 43.0dBm Channel to Case CASE STYLE: IQ Note 1: The condition for GL is the same as Pout except Pin = 28.0dBm. Edition 1.1 October 2001 1 Min. Limits Typ. Max. Unit - 8 - A -0.1 -0.3 -0.5 V -5 - - V 48.0 49.0 - dBm 8.5 9.5 - dB - 45 - % - 11.5 15.0 A - 0.8 1.1 °C/W FLL810IQ-4C L-Band High Power GaAs FET OUTPUT POWER vs. FREQUENCY IMD & IDS(RF) vs. TOTAL OUTPUT POWER -24 50 34dBm 42 40 3.70 3.65 IDS(RF) 4 -56 2 33 34 35 36 37 38 39 40 41 42 43 44 45 3.75 Total Output Power (dBm) Frequency (GHz) OUTPUT POWER & ηadd vs. INPUT POWER 48 VDS = 12V, IDS(DC) = 5A, f = 3.6GHz 46 44 Pout 50 40 38 40 ηadd 30 36 20 34 10 26 28 30 32 34 36 38 40 42 Input Power (dBm) 2 ηadd (%) 42 6 -52 -60 3.60 8 -48 26dBm 3.55 10 -44 34 3.50 12 IM5 38 3.45 14 IM3 -40 30dBm 36 16 -36 IMD (dBc) 44 18 -32 38dBm 46 Output Power (dBm) Output Power (dBm) -28 43dBm 48 VDS = 12V, IDS(DC) = 5A, fo = 3.6GHz, f1 = 3.61GHz IDS(RF) (A) VDS = 12V, IDS(DC) = 5A FLL810IQ-4C L-Band High Power GaAs FET FREQUENCY (MHZ) 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 3900 4000 4100 4200 4300 4400 4500 MAG ANG S-PARAMETERS VDS = 12V, IDS = 2500mA S21 S12 MAG ANG MAG ANG .499 .617 .703 .761 .793 .801 .783 .747 .644 .492 .315 .397 .603 .743 .825 .878 .910 .937 .949 .953 .956 -103.9 -120.1 -131.7 -141.4 -148.6 -155.5 -162.8 -169.1 -176.8 178.6 -166.2 -130.1 -128.8 -135.6 -143.0 -148.0 -152.6 -156.1 -159.8 -162.7 -165.1 1.973 1.880 1.735 1.784 1.689 1.803 1.949 2.087 2.398 2.627 2.798 2.612 2.173 1.814 1.493 1.222 .999 .849 .735 .681 .666 S11 -113.4 -125.9 -142.2 -153.8 -163.9 -178.8 171.0 154.5 136.9 116.1 88.0 59.6 33.1 13.3 -5.2 -20.4 -34.6 -46.9 -55.8 -67.5 -82.1 .017 .017 .016 .016 .017 .017 .019 .021 .024 .031 .036 .034 .031 .024 .022 .019 .019 .017 .018 .018 .020 -111.7 -134.2 -149.9 -167.5 -176.4 161.0 136.6 119.4 94.7 80.3 48.3 15.7 -8.8 -33.0 -47.8 -59.2 -67.0 -76.4 -86.6 -96.7 -107.9 S22 MAG ANG .796 .773 .752 .729 .714 .678 .656 .604 .566 .506 .468 .504 .558 .580 .559 .535 .483 .418 .376 .343 .386 152.9 151.8 150.1 149.5 148.0 146.2 143.9 140.8 138.8 137.6 143.3 148.1 145.3 136.4 125.9 113.4 97.7 78.8 53.9 18.9 -17.4 Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs. Download S-Parameters, click here 3 FLL810IQ-4C L-Band High Power GaAs FET Case Style "IQ" 2.5 MIN. 24±0.35 20.4±0.2 2 1 2.4±0.15 4-0.1 15.5±0.2 3 8.0±0.15 6 4-2.6±0.2 17.4±0.2 45° 4-R1.3±0.2 2.5 MIN. 4-2.0 5 4 6.0 1, 2: Gate 3: Source 4, 5: Drain Unit: mm (inches) 1.9±0.2 5.5 Max. 14.9±0.2 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI05019M200 4