FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain, long term reliability and ease of use. APPLICATIONS • Solid State Base-Station Power Amplifier. • PCS/PCN Communication Systems. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 107 W Tc = 25°C Total Power Dissipation PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch +175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Conditions Min. Limits Typ. Max. Unit Drain Current IDSS VDS = 5V, VGS=0V - 12 16 A Transconductance gm VDS = 5V, IDS=7.2A - 6000 - mS Pinch-Off Voltage Vp VDS = 5V, IDS=720mA -1.0 -2.0 -3.5 V -5 - - V 44.5 45.5 - dBm 9.0 10.0 - dB - 6.0 8.0 A - 44 - % - 44.5 - dBm - 10.0 - dB - 1.0 1.4 °C/W Gate-Source Breakdown Voltage VGSO Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Drain Current IDSR Power-Added Efficiency ηadd Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB VDS = 10V f=1.96GHz IDS = 2A Thermal Resistance Rth Channel to Case IGS = -720µA VDS = 12V f=1.96GHz IDS = 2A CASE STYLE: IP Edition 1.6 December 1999 G.C.P.: Gain Compression Point 1 FLL400IP-2 L-Band Medium & High Power GaAs FET OUTPUT POWER & ηadd vs. INPUT POWER POWER DERATING CURVE 120 46 VDS = 12V IDS = 2A f = 1.96GHz 45 44 80 60 40 42 41 Pout 40 39 50 38 40 37 36 30 ηadd 35 34 33 20 32 20 10 31 30 0 50 100 150 19 200 21 23 25 OUTPUT POWER vs. FREQUENCY 46 29 31 Input Power (dBm) Case Temperature (°C) 47 27 VDS = 12V IDS = 2A Pin=37dBm 45 44 43 42 30dBm 41 40 39 38 37 25dBm 36 35 34 33 32 20dBm 31 30 1.8 1.85 1.9 1.95 Frequency (GHz) 2 2.0 33 35 37 0 ηadd (%) Output Power (dBm) 43 Output Power (dBm) Total Power Dissipation (W) 100 FLL400IP-2 L-Band Medium & High Power GaAs FET IMD (dBc) OUTPUT POWER vs. IMD -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 VDS = 12V IDS = 2A f = 1.96GHz ∆f = +5.0MHz IM3 IM5 26 28 30 32 34 36 38 40 42 44 Total Output Power (dBm) IMD (dBc) OUTPUT POWER vs. IMD -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 VDS = 10V IDS = 5A f = 1.96GHz ∆f = +5MHz IM3 IM5 27 28 29 30 31 32 33 34 35 36 37 Total Output Power (dBm) 3 38 39 40 41 42 43 FLL400IP-2 L-Band Medium & High Power GaAs FET Case Style "IP" Metal-Ceramic Hermetic Package 2-1 (0.039) 3 6 5 (0.197) 4 2-1.4 (0.055) 1.9 (0.075) 13.8±0.2 (0.543) 13.3 (0.523) 5.5MAX (0.217) 5 2-R1.3±0.2 (0.051) 9.8±0.2 (0.386) 2 2.6±0.2 (0.102) 1 3.0±0.5 MIN. (0.118) 45° 2.4 (0.094) 0.1+0.05 -0.01 (0.039) 8.2 (0.332) 3.0±0.5 MIN. (0.118) 22±0.2 (0.866) 18.6±0.2 (0.732) 1, 2: Gate 3, 6: Source 4, 5: Drain Unit: mm (inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0799M200 4