FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm (Typ.) High Gain: G1dB = 8.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS +15 V Gate-Source Voltage VGS -5 V 4.16 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed +10 volts. 2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with gate resistance of 400Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions 300 450 mA - 150 - mS -1.0 -2.0 -3.5 V -5 - - V 27.5 28.8 - dBm 7.5 8.5 - dB - 35 - % - 25 36 °C/W VDS = 5V, IDS = 200mA Pinch-off Voltage Vp VDS = 5V, IDS =15mA Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Power-added Efficiency ηadd Thermal Resistance Rth IGS = -15µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 6 GHz Channel to Case CASE STYLE: WF Edition 1.1 July 1999 Unit - gm VGSO Limit Typ. Max. VDS = 5V, VGS = 0V Transconductance Gate Source Breakdown Voltage Min. G.C.P.: Gain Compression Point 1 FLC097WF C-Band Power GaAs FET DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE POWER DERATING CURVE Drain Current (mA) Total Power Dissipation (W) 5 4 3 2 1 VGS =0V 300 -0.5V 200 -1.0V 100 -1.5V -2.0V 0 0 50 100 150 200 2 4 6 8 10 Drain-Source Voltage (V) Case Temperature (°C) VDS=10V f1 = 6.0 GHz f2 = 6.01GHz 2-tone Test 24 22 20 -10 -20 Pout 18 -30 IM3 16 -40 14 IM3 (dBc) Output Power (S.C.L.) (dBm) OUTPUT POWER & IM3 vs. INPUT POWER -50 6 8 10 12 14 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level P1dB & ηadd vs. VDS OUTPUT POWER vs. INPUT POWER 4 GHz f=6GHz IDS ≈ 0.6 IDSS 29 6 GHz 24 22 20 50 40 4 GHz ηadd 6 GHz 30 18 20 16 10 28 40 ηadd 30 27 8 10 12 14 16 18 20 50 P1dB 9 10 Drain-Source Voltage (V) Input Power (dBm) 2 ηadd (%) Pout P1dB (dBm) 26 ηadd (%) Output Power (dBm) VDS=10V 28 IDS ≈ 0.6 IDSS FLC097WF C-Band Power GaAs FET S11 S22 +j50 8 7 +j100 9 10 6 11 12 5 +j10 0 +j250 12 11 4 SCALE FOR |S12| +j25 10 10 3 2GHz .08 .06 3 .04 4 .02 5 9 25 50Ω 8 100 180° 250 4 3 2 1 SCALE FOR |S21| 7 6 -j10 S21 S12 +90° 6 12 11 10 9 8 5 4 3 2GHz 0° 5 7 7 -j250 2GHz 2GHz 3 9 10 11 -j25 12 -j100 -j50 -90° FREQUENCY (MHZ) MAG ANG S-PARAMETERS VDS = 10V, IDS = 180mA S21 S12 MAG ANG MAG ANG 500 .950 -61.4 10.087 140.8 .022 55.5 .399 -31.1 2000 .857 -151.4 4.537 76.8 .038 7.0 .344 -83.9 3000 .841 -176.1 3.114 52.9 .039 -6.0 .392 -102.2 4000 .832 166.3 2.398 33.0 .039 -13.1 .445 -115.6 5000 .825 148.7 1.978 13.6 .040 -19.6 .480 -127.7 6000 .820 129.8 1.681 -6.3 .042 -26.4 .506 -142.2 7000 .817 112.1 1.418 -25.9 .043 -34.9 .534 -158.6 8000 .807 97.6 1.212 -43.2 .045 -36.2 .571 -172.0 9000 .804 83.6 1.080 -59.4 .050 -40.8 .603 176.6 10000 .799 67.2 1.011 -76.6 .059 -45.9 .620 165.2 11000 .794 47.0 .954 -96.5 .071 -55.4 .629 149.3 12000 .784 26.9 .864 -117.0 .082 -66.9 .649 130.8 S11 S22 MAG ANG Download S-Parameters, click here 3 FLC097WF C-Band Power GaAs FET Ø1.6±0.01 (0.063) 1.0 Min. (0.039) Case Style "WF" Metal-Ceramic Hermetic Package 2.5 (0.098) 2 2.5±0.15 (0.098) 1 3 0.1±0.05 (0.004) 1.0 Min. (0.039) 0.6 (0.024) 0.8±0.1 (0.031) 2.5 Max. (0.098) 8.5±0.2 (0.335) 6.1±0.1 (0.240) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4