FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. SOURCE SOURCE GATE Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C) Parameter Symbol Drain-Source Voltage Condition Unit Rating 12 -5 V 1.5 W Total Power Dissipation VDS VGS PT Storage Temperature TSTG -65 to 175 °C Channel Temperature TCH 175 °C Gate-Source Voltage Tc = 25°C V Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with gate resistance of 1000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions VDS = 3V, VGS = 0V Limit Typ. Max. Unit 70 110 150 mA Min. Transconductance gm VDS = 3V, IDS = 54mA - 100 - mS Pinch-off Voltage Vp VDS = 3V, IDS = 5.4mA -0.7 -1.2 -1.7 V IGS = -5.4µA -5.0 - - V - 2.5 - dB - 9.5 - dB 24.5 24.5 23.5 14.0 10.0 6.5 - dBm dBm dBm dB dB dB 70 100 °C/W Gate Source Breakdown Voltage Noise Figure Associated Gain VGSO NF Gas Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Thermal Resistance Rth VDS = 3V, IDS = 30mA f = 8GHz f = 4GHz VDS = 8V, f = 8GHz 23.5 IDS = 0.7IDSS f = 12GHz f = 4GHz VDS = 8V, f = 8GHz 9.0 IDS = 0.7IDSS f = 12GHz Channel to Case Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) G.C.P.: Gain Compression Point The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.2 July 1999 - 1 FSX027X GaAs FET & HEMT Chips Total Power Dissipation (W) POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 140 Drain Current (mA) 1.5 1.2 0.9 0.6 120 VGS = 0V 100 -0.2V 0.3 -0.4V 80 60 -0.6V -0.8V 40 -1.0V 20 0 50 -1.2V 2 100 150 200 Case Temperature (°C) 4 6 8GHz P 1dB vs. VDS 12GHz 25 20 60 18 50 f=4GHz 8GHz 16 ηadd 14 12GHz 40 30 12 20 10 10 8 P 1dB (dBm) Pout 22 ηadd (%) Output Power (dBm) 24 f=4GHz IDS = 0.5 IDSS 10 Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER 26 VDS = 8V 8 f = 8GHz IDS = 0.7 IDSS 23 21 19 17 0 -6 -4 -2 0 2 4 6 4 8 10 12 14 16 18 20 Input Power (dBm) 5 6 7 8 Drain-Source Voltage (V) 2 FSX027X GaAs FET & HEMT Chips S11 S-PARAMETERS VDS = 8V, IDS = 75mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG ANG S22 1000 .981 -41.2 7.117 153.2 .023 67.6 .633 -14.9 2000 .946 -75.2 6.065 130.8 .040 50.3 .588 -26.6 3000 .913 -100.3 5.015 113.3 .050 37.4 .548 -35.2 4000 .882 -118.9 4.168 99.4 .055 28.8 .523 -42.1 5000 .877 -132.7 3.520 87.9 .058 22.2 .506 -48.4 6000 .867 -143.6 3.026 77.9 .060 17.3 .498 -54.7 7000 .860 -152.5 2.644 69.0 .062 13.6 .499 -60.9 8000 .854 -159.9 2.336 60.9 .063 10.2 .504 -67.1 9000 .849 -166.3 2.089 53.1 .064 7.0 .515 -73.4 10000 .845 -172.0 1.887 45.8 .065 4.4 .524 -79.0 11000 .841 -177.2 1.716 36.7 .065 2.1 .539 -84.7 12000 .837 178.3 1.569 32.0 .065 0.0 .550 -90.3 13000 .834 174.1 1.441 25.4 .066 -1.0 .561 -95.7 14000 .829 169.8 1.332 18.9 .067 -3.5 .574 -101.2 15000 .826 166.1 1.238 12.6 .067 -5.4 .589 -106.8 16000 .824 162.7 1.155 6.6 .068 -6.1 .603 -112.5 17000 .817 159.3 1.074 .4 .069 -9.1 .623 -118.0 18000 .813 155.9 1.001 -5.5 .068 -10.4 .642 -123.1 19000 .814 152.8 .543 -11.3 .069 -11.2 .657 -127.9 20000 .811 150.1 .888 -16.9 .069 -13.4 .672 -132.7 MAG ANG NOTE:* The data includes bonding wires. n: number of wires Gate n=1 (0.2mm length, 25µm Dia Au wire) Drain n=1 (0.2mm length, 25µm Dia Au wire) Source n=4 (0.2mm length, 25µm Dia Au wire) 3 Download S-Parameters, click here FSX027X GaAs FET & HEMT Chips CHIP OUTLINE 490±20 SOURCE SOURCE GATE 100 102 200 430±20 DRAIN 102 167 167 Die Thickness: 100±20µm (Unit: µm) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4